Provided is a polishing liquid which contains a permanganate, a pH adjustor, and water and which is used for polishing of a SiC substrate. Also provided is a method of polishing a SiC substrate, the method including: a first polishing step of polishing the SiC substrate by use of a first polishing liquid containing a permanganate, inorganic salts having an oxidizing ability, and water; and a second polishing step of performing finishing polishing of the SiC substrate by use of a second polishing liquid containing a permanganate, a pH adjustor, and water after the first polishing step.

Provided is a polishing liquid which contains a permanganate, a pH adjustor, and water and which is used for polishing of a SiC substrate. Also provided is a method of polishing a SiC substrate, the method including: a first polishing step of polishing the SiC substrate by use of a first polishing liquid containing a permanganate, inorganic salts having an oxidizing ability, and water; and a second polishing step of performing finishing polishing of the SiC substrate by use of a second polishing liquid containing a permanganate, a pH adjustor, and water after the first polishing step.

Systems and methods are provided for performing chemical-mechanical planarization. An example system includes: a polishing head, a polishing pad, a slurry distribution component, and a reactant distribution component. The polishing head is configured to perform chemical-mechanical planarization on an article. The polishing pad is configured to support the article. The slurry distribution component is configured to provide a slurry on the polishing pad. The reactant distribution component is configured to provide an oxidizer material on the polishing pad to generate a plurality of radicals to react with the article.

Embodiments of the present disclosure relate a CMP tool and methods for planarization a substrate. Particularly, embodiments of the present disclosure provide a substrate transporter for use in a CMP tool. The transporter may be used transport and/or carry substrates among various polishers and cleaners in a CMP tool while preventing the substrates from drying out during transportation. By keeping surfaces of the substrates wet during substrate waiting time or idle time in the CMP tool, embodiments of the present disclosure prevent many types of defects, such as byproducts, agglomerated abrasives, pad debris, slurry residues, from accumulate on the substrate surface during CMP processing, thus improve yields and device performance.

Embodiments of the present disclosure relate a CMP tool and methods for planarization a substrate. Particularly, embodiments of the present disclosure provide a substrate transporter for use in a CMP tool. The transporter may be used transport and/or carry substrates among various polishers and cleaners in a CMP tool while preventing the substrates from drying out during transportation. By keeping surfaces of the substrates wet during substrate waiting time or idle time in the CMP tool, embodiments of the present disclosure prevent many types of defects, such as byproducts, agglomerated abrasives, pad debris, slurry residues, from accumulate on the substrate surface during CMP processing, thus improve yields and device performance.

The present disclosure relates to methods of forming adhesive films having at least one pressure-sensitive adhesive polymer, related films, and related methods of using such films in lapping processes.

The present disclosure relates to methods of forming adhesive films having at least one pressure-sensitive adhesive polymer, related films, and related methods of using such films in lapping processes.

A processing apparatus includes a rotary table that causes a workpiece to rotate around a rotary axis, a roller-shaped member that rotates on an axis orthogonal to the rotary axis of the rotary table, a vertical driving section that is driven in a direction of the rotary axis of the rotary table so as to bring the roller-shaped member and the workpiece into contact with each other, an ultraviolet ray irradiation source that irradiates a portion between the roller-shaped member and the workpiece with an ultraviolet ray, a polishing material that is supplied to the portion between the roller-shaped member and the workpiece, and a light scattering medium that is supplied to the portion between the roller-shaped member and the workpiece and scatters an ultraviolet ray from the ultraviolet ray irradiation source.

A processing apparatus includes a rotary table that causes a workpiece to rotate around a rotary axis, a roller-shaped member that rotates on an axis orthogonal to the rotary axis of the rotary table, a vertical driving section that is driven in a direction of the rotary axis of the rotary table so as to bring the roller-shaped member and the workpiece into contact with each other, an ultraviolet ray irradiation source that irradiates a portion between the roller-shaped member and the workpiece with an ultraviolet ray, a polishing material that is supplied to the portion between the roller-shaped member and the workpiece, and a light scattering medium that is supplied to the portion between the roller-shaped member and the workpiece and scatters an ultraviolet ray from the ultraviolet ray irradiation source.

The present invention relates to a substrate processing apparatus for processing a substrate, such as a wafer, and more particularly to a substrate processing method and a substrate processing apparatus for polishing a bevel portion of the substrate and performing CMP processing of a flat portion of the substrate. The substrate processing method includes: polishing a bevel portion (B) of each of the plurality of substrates (W) by a polishing tool such that slope surfaces(S) of bevel portions (B) of the plurality of substrates (W) have the same slope angles (); and performing CMP processing of a flat portion (P) of each of the plurality of substrates (W) whose bevel portions (B) have been polished.