A cleaning apparatus for a vacuum pedestal and method of cleaning a pedestal used in semiconductor device fabrication are described. The apparatus has a baseplate, a collar attached to the baseplate, a cap disposed on the collar, and a shaft that extends from the collar through the cap, collar and baseplate. A manual rotatable handle is attached to a shaft portion that extends from the cap. Motion of the handle in a downward direction is impeded by the cap. A disk is attached to a lower portion of the shaft and is separated from a bottom of the baseplate due to weighted rings, which are attached to the disk and surround the lower portion of the shaft such that a vertical float is present between the shaft and the cap. At least one abrasive pad is attached to the disk to remove build-up on the underlying pedestal surface.

A substrate processing apparatus includes a first polishing chamber, a second polishing chamber, a dry polishing chamber and a loading chamber on a turntable. The dry polishing chamber includes a polishing device on the turntable, and a chamber cover including a cover plate, an interception filter at an intake port at the cover plate, and a particle barrier connected to the cover plate. The particle barrier faces the interception filter, and is between the polishing device and the interception filter.

A substrate processing apparatus includes a first polishing chamber, a second polishing chamber, a dry polishing chamber and a loading chamber on a turntable. The dry polishing chamber includes a polishing device on the turntable, and a chamber cover including a cover plate, an interception filter at an intake port at the cover plate, and a particle barrier connected to the cover plate. The particle barrier faces the interception filter, and is between the polishing device and the interception filter.

Embodiments provided herein include a system and method for cleaning a first surface of a substrate using a brush carousel assembly. In one embodiment, the brush carousel assembly includes one or more rotatable brush mounting assemblies coupled to a rotatable carriage, having a carriage support structure configured to rotate about a carriage axis. The brush carousel assembly further includes a second brush mounting assembly disposed a second radial distance from the carriage axis, and coupled to the support structure of the carriage that includes the one or more rotatable support members.

Embodiments provided herein include a system and method for cleaning a first surface of a substrate using a brush carousel assembly. In one embodiment, the brush carousel assembly includes one or more rotatable brush mounting assemblies coupled to a rotatable carriage, having a carriage support structure configured to rotate about a carriage axis. The brush carousel assembly further includes a second brush mounting assembly disposed a second radial distance from the carriage axis, and coupled to the support structure of the carriage that includes the one or more rotatable support members.

Apparatus and methods for correcting asymmetry in a thickness profile by use of a Chemical Mechanical Planarization (CMP) process. In one embodiment, a CMP system includes a polishing pad, an adhesion layer, and a platen. The polishing pad includes has a polishing surface, a second surface that is positioned opposite to the polishing surface in a first direction, and a plurality of cavities formed in the second surface. The platen includes a body that comprises a pad supporting surface and one or more ports formed in the body, configured to receive a positive or negative pressure that is generated from a fluid control device. Each of the plurality of cavities is in fluid communication with at least one of the one or more ports and the adhesion layer is disposed between the pad supporting surface of the platen and a portion of the second surface of the polishing pad.

Apparatus and methods for correcting asymmetry in a thickness profile by use of a Chemical Mechanical Planarization (CMP) process. In one embodiment, a CMP system includes a polishing pad, an adhesion layer, and a platen. The polishing pad includes has a polishing surface, a second surface that is positioned opposite to the polishing surface in a first direction, and a plurality of cavities formed in the second surface. The platen includes a body that comprises a pad supporting surface and one or more ports formed in the body, configured to receive a positive or negative pressure that is generated from a fluid control device. Each of the plurality of cavities is in fluid communication with at least one of the one or more ports and the adhesion layer is disposed between the pad supporting surface of the platen and a portion of the second surface of the polishing pad.

A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.

A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.

A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.