Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.

This document provides a method of operating a floor grinding machine 100. The method comprises providing a grinding machine 100 comprising a frame 101, a motor 102 and at least one grinding element 1, causing the motor to drive the grinding element so as to rotate at a rotational speed, while in contact with a floor surface to grind, polish or mill the floor surface, determining an actual value of a motor operating parameter, determining a nominal value of the motor operating parameter, comparing the actual value of the motor operating parameter with the nominal value of the motor operating parameter, if a difference between the actual value of the motor operating parameter and the nominal value of the motor operating parameter exceeds a predetermined difference threshold, determining at least one grinding parameter to be adjusted, and causing the at least one grinding parameter to be adjusted.

Generating a recipe for controlling a polishing system includes receiving a target removal profile that includes a target thickness to remove for a plurality of locations on a substrate that are angularly distributed around the substrate, and storing a first function defining a polishing rate for a zone from a plurality of pressurizable zones of a carrier head that are angularly distributed around a the carrier head. The first function defines polishing rates as a function of pressures. For each particular zone of the plurality of zones a recipe defining a pressure for the particular zone over time is calculated by calculating an expected thickness profile after polishing using the first function, and minimizing a cost function that incorporates a first term representing a difference between the expected thickness profile and a target thickness profile.

Generating a recipe for a polishing process includes receiving a target removal profile that includes a target thickness to remove for locations spaced angularly around a center of a substrate, storing a first function providing substrate orientation relative to a carrier head over time, storing a second function defining a polishing rate below a zone of the zone as a function of one or more pressures of one or more zones of the carrier head, and for each particular zone of the plurality of zones, calculate a recipe defining a pressure for the particular zone over time. Calculating the recipe includes calculating an expected thickness profile after polishing from the second function defining the polishing rate and the first function providing substrate orientation relative to the zone over time, and applying a minimizing algorithm to reduce a difference between the expected thickness profile and the target thickness profile.

An intelligent polishing system provides improvements to the polisher itself as well as networking capability enabling remote control and monitoring of multiple polishers. One or more electronic devices ensure that a user of the intelligent polisher operates the polisher to achieve optimum results. Such devices may include a polishing timer, a downward pressure sensor, or a tachometer to measure speed. The system may further include a memory for storing operational parameters or performance characteristics of the intelligent polisher for later downloading or retrieval. The same or a different memory may store calibration information to ensure that intelligent polisher operates within predetermined limits. Such operational parameters, performance characteristics or calibration information include RPM, polishing time, downward force or inlet air pressure. The system may further include a plurality of intelligent polishers, each in communication with a server enabling remote monitoring or control of the polishers through a computer or mobile device.

A grinding machine tool with random eccentric orbital motion speed detection, the grinding machine tool comprises a body and a grinding disc, the body comprises a driving shaft and a tool holder connecting the grinding disc and having an eccentric distance relative to the driving shaft, and the grinding disc performs grinding in a random eccentric orbital motion when the driving shaft rotates. The grinding disc comprises at least one detected member on a side of the grinding disc facing the body for detecting a speed of the random eccentric orbital motion, and the at least one detected member defines a detection area with a range greater than or equal to twice the eccentric distance. Thereby, an accurate speed of the grinding disc performing the random eccentric orbital motion is obtained, so that the grinding operation of precision grinding which is gradually performed by automation is more precisely controlled.

Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.

A controller is provided for use in controlling a blade sharpening system that includes at least one grinding wheel operable to sharpen the blade. The controller includes a memory device, and a processor communicatively coupled to the memory device. The processor is configured to receive signals from at least one sensor, the at least one sensor operable to monitor rotation of the at least one grinding wheel. The processor is further configured to adjust a position of the at least one grinding wheel relative to the blade based on the received signals.

The invention relates to a machine tool, hi particular a lathe grinding machine, comprising a tool spindle, a spindle motor and a tool clamped in a covet, with which tool a workpiece may be machined which may be moved in several axes relative to the tool, and comprising a control device for the tool spindle which controls the spindle motor. A spindle load detection device (24) which is connected with the control device (20) is provided and the control device (20) compares the output signal (26) of the spindle load detection device (24) with a predetermined threshold value (50), said threshold value (50) being below, in particular at least 20% below, the breaking load (54) of the tool (18). The control device (20) turns off the spindle motor (14) when the output signal (26) of the spindle load detection device (24) exceeds the threshold value (50).

A method for forming semiconductor devices includes: grinding a backside of a semiconductor wafer with a grinding wheel during a first time interval, wherein the grinding wheel is forward moved during the first time interval, wherein a plurality of semiconductor devices are formed on the semiconductor wafer; and polishing the backside of the semiconductor wafer with the grinding wheel in a second time interval, wherein the grinding wheel is backward moved during the second time interval.