A controller of a chemical mechanical polishing system is configured to cause a carrier head to sweep across a polishing pad in accord with a sweep profile. The controller is also configured to select values for a plurality of control parameters to minimize a difference between a target removal profile and an expected removal profile. The plurality of control parameters include a plurality of dwell time parameters. A relationship between the plurality of control parameters and a removal rate is stored in a data structure representing a first matrix which includes a plurality of columns including a column for each dwell time parameter and a row for each position on the substrate represented in the expected removal profile, and the controller is configured to, as part of selection of the values, calculate the expected removal profile by multiplying the first matrix by a second matrix representing control parameter values.

A controller of a chemical mechanical polishing system is configured to cause a carrier head to sweep across a polishing pad in accord with a sweep profile. The controller is also configured to select values for a plurality of control parameters to minimize a difference between a target removal profile and an expected removal profile. The plurality of control parameters include a plurality of dwell time parameters. A relationship between the plurality of control parameters and a removal rate is stored in a data structure representing a first matrix which includes a plurality of columns including a column for each dwell time parameter and a row for each position on the substrate represented in the expected removal profile, and the controller is configured to, as part of selection of the values, calculate the expected removal profile by multiplying the first matrix by a second matrix representing control parameter values.

A method of detecting a polishing endpoint includes storing a plurality of library spectra, measuring a sequence of spectra from the substrate in-situ during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching library spectrum from the plurality of library spectra to generate a sequence of best matching library spectra. Each library spectrum has a stored associated value representing a degree of progress through a polishing process, and the stored associated value for the best matching library spectrum is determined for each best matching library spectrum to generate a sequence of values representing a progression of polishing of the substrate. The sequence of values is compared to a target value, and a polishing endpoint is triggered when the sequence of values reaches the target value.

A method of detecting a polishing endpoint includes storing a plurality of library spectra, measuring a sequence of spectra from the substrate in-situ during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching library spectrum from the plurality of library spectra to generate a sequence of best matching library spectra. Each library spectrum has a stored associated value representing a degree of progress through a polishing process, and the stored associated value for the best matching library spectrum is determined for each best matching library spectrum to generate a sequence of values representing a progression of polishing of the substrate. The sequence of values is compared to a target value, and a polishing endpoint is triggered when the sequence of values reaches the target value.

An apparatus which can polish an entirety of a surface of a substrate, such as a wafer, is disclosed. The apparatus includes a substrate holder configured to hold a substrate and rotate the substrate; and a polishing head configured to rub a polishing tool against a first surface of the substrate to polish the first surface. The substrate holder includes a plurality of rollers which can contact a periphery of the substrate. The plurality of rollers are rotatable about their respective own axes.

An apparatus which can polish an entirety of a surface of a substrate, such as a wafer, is disclosed. The apparatus includes a substrate holder configured to hold a substrate and rotate the substrate; and a polishing head configured to rub a polishing tool against a first surface of the substrate to polish the first surface. The substrate holder includes a plurality of rollers which can contact a periphery of the substrate. The plurality of rollers are rotatable about their respective own axes.

A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.

A grinding machine includes a manual rotating handle provided with a rotation detector that outputs a rotation detection signal so that the position of a grinding wheel with respect to a workpiece can be relatively moved in accordance with the rotation detection signal. The grinding machine further includes a grinding wheel, a moving apparatus that moves the position of the grinding wheel with respect to a workpiece W, a proximity detector that outputs a proximity detection signal corresponding to a relative position or a relative distance between the workpiece and the grinding wheel, a manual rotating handle provided with a rotation detector, and a control apparatus that controls the moving apparatus based on the rotation detection signal. The manual rotating handle is provided with a rotational-torque varying apparatus. The control apparatus controls the rotational-torque varying apparatus based on the proximity detection signal.

A grinding machine includes a manual rotating handle provided with a rotation detector that outputs a rotation detection signal so that the position of a grinding wheel with respect to a workpiece can be relatively moved in accordance with the rotation detection signal. The grinding machine further includes a grinding wheel, a moving apparatus that moves the position of the grinding wheel with respect to a workpiece W, a proximity detector that outputs a proximity detection signal corresponding to a relative position or a relative distance between the workpiece and the grinding wheel, a manual rotating handle provided with a rotation detector, and a control apparatus that controls the moving apparatus based on the rotation detection signal. The manual rotating handle is provided with a rotational-torque varying apparatus. The control apparatus controls the rotational-torque varying apparatus based on the proximity detection signal.

A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.