The present invention discloses a planogrinder including a measuring device, wherein the measuring device can move along the X-axis direction, an optical probe is provided at one end of the measuring device close to a bed base, and the optical probe is used for real-time detection of an outer diameter of a workpiece being machined. The planogrinder provided by the present invention can measure dimensions of the workpiece during rotation through the measuring device, and can control the deformation of the workpiece during the rotation process, thereby making the machining accuracy of the workpiece controllable during use.

The present invention discloses a planogrinder including a measuring device, wherein the measuring device can move along the X-axis direction, an optical probe is provided at one end of the measuring device close to a bed base, and the optical probe is used for real-time detection of an outer diameter of a workpiece being machined. The planogrinder provided by the present invention can measure dimensions of the workpiece during rotation through the measuring device, and can control the deformation of the workpiece during the rotation process, thereby making the machining accuracy of the workpiece controllable during use.

A polishing assembly and method for polishing optical cables, the polishing assembly having a platform configured to receive a polishing film and configured to rotate according to a dual orbital motion; a force gauge functionally coupled to the platform and configured to measure downward force applied against the platform; a mounting fixture configured to mount a plurality of optical cables; and a movable arm configured to move the mounting fixture downwards to press mounted cables against the polishing film, upwards to pull the mounted cables away from the polishing film, and to rotate circularly along a continuous circular path. The optical cables are pressed against the rotating polishing film while simultaneously monitoring the downward force applied against the platform so that downward force can be maintained within a prescribed tolerance throughout the polishing process.

A polishing assembly and method for polishing optical cables, the polishing assembly having a platform configured to receive a polishing film and configured to rotate according to a dual orbital motion; a force gauge functionally coupled to the platform and configured to measure downward force applied against the platform; a mounting fixture configured to mount a plurality of optical cables; and a movable arm configured to move the mounting fixture downwards to press mounted cables against the polishing film, upwards to pull the mounted cables away from the polishing film, and to rotate circularly along a continuous circular path. The optical cables are pressed against the rotating polishing film while simultaneously monitoring the downward force applied against the platform so that downward force can be maintained within a prescribed tolerance throughout the polishing process.

An SiC ingot forming method includes: a holding step of holding by a chuck table a cut section of a primitive SiC ingot cut from an SiC ingot growth base; a planarization step of grinding an end surface of the primitive SiC ingot held by the chuck table, to planarize the end surface; a c-plane detection step of detecting a c-plane of the primitive SiC ingot from the planarized end surface; a first end surface forming step of grinding the planarized end surface, to form a first end surface inclined at an off angle relative to the c-plane; and a second end surface forming step of holding the first end surface by the chuck table and grinding the cut section of the primitive SiC ingot in parallel to the first end surface, to form a second end surface.

An SiC ingot forming method includes: a holding step of holding by a chuck table a cut section of a primitive SiC ingot cut from an SiC ingot growth base; a planarization step of grinding an end surface of the primitive SiC ingot held by the chuck table, to planarize the end surface; a c-plane detection step of detecting a c-plane of the primitive SiC ingot from the planarized end surface; a first end surface forming step of grinding the planarized end surface, to form a first end surface inclined at an off angle relative to the c-plane; and a second end surface forming step of holding the first end surface by the chuck table and grinding the cut section of the primitive SiC ingot in parallel to the first end surface, to form a second end surface.

A substrate processing method of grinding a first substrate in a combined substrate in which the first substrate and a second substrate are bonded to each other includes measuring a total thickness distribution of the combined substrate; measuring a thickness distribution of the first substrate; calculating a thickness distribution of the second substrate by subtracting the thickness distribution of the first substrate from the total thickness distribution of the combined substrate; deciding a relative inclination between a substrate holder configured to hold the combined substrate and a grinder configured to grind the combined substrate, based on the thickness distribution of the second substrate; and grinding the first substrate while holding the combined substrate at the inclination which is decided.

A substrate processing method includes measuring a first thickness distribution of a first substrate in a first one of multiple combined substrates before being subjected to a finishing grinding; measuring a second thickness distribution of the first substrate in a second one of the multiple combined substrates before being subjected to the finishing grinding; deciding a relative inclination between a substrate holder configured to hold the second one of the multiple combined substrates and a grinder configured to perform the finishing grinding on the corresponding combined substrate, based on first difference data between the first thickness distribution and the second thickness distribution; and performing finishing grinding on the first substrate in the second one of the multiple combined substrates while holding the second one of the multiple combined substrates at the inclination which is decided.

A method includes bonding a first package component on a composite carrier, and performing a first polishing process on the composite carrier to remove a base carrier of the composite carrier. The first polishing process stops on a first layer of the composite carrier. A second polishing process is performed to remove the first layer of the composite carrier. The second polishing process stops on a second layer of the composite carrier. A third polishing process is performed to remove a plurality of layers in the composite carrier. The plurality of layers include the second layer, and the third polishing process stops on a dielectric layer in the first package component.

A method includes bonding a first package component on a composite carrier, and performing a first polishing process on the composite carrier to remove a base carrier of the composite carrier. The first polishing process stops on a first layer of the composite carrier. A second polishing process is performed to remove the first layer of the composite carrier. The second polishing process stops on a second layer of the composite carrier. A third polishing process is performed to remove a plurality of layers in the composite carrier. The plurality of layers include the second layer, and the third polishing process stops on a dielectric layer in the first package component.