In one embodiment, a method is provided for polishing a substrate. The method generally includes receiving a plurality of dwell times of a pad conditioning disk, wherein the plurality of dwell times are to be used in a pad conditioning process performed on a pad disposed on a platen, and each dwell time corresponding to a zone of a plurality of zones of the pad disposed on the platen, determining a plurality of total pad conditioning disk cut times to be used in the pad conditioning process, each total pad conditioning disk cut time corresponding to a zone of the plurality of zones, and generating a first pad wear removal model based on a set of parameters, including the plurality of dwell times and the plurality of total pad conditioning disk cut times.

In one embodiment, a method is provided for polishing a substrate. The method generally includes receiving a plurality of dwell times of a pad conditioning disk, wherein the plurality of dwell times are to be used in a pad conditioning process performed on a pad disposed on a platen, and each dwell time corresponding to a zone of a plurality of zones of the pad disposed on the platen, determining a plurality of total pad conditioning disk cut times to be used in the pad conditioning process, each total pad conditioning disk cut time corresponding to a zone of the plurality of zones, and generating a first pad wear removal model based on a set of parameters, including the plurality of dwell times and the plurality of total pad conditioning disk cut times.

Provided is a dressing device for a carrier. The dressing device comprises a dresser, a swing arm, a base and at least one damper. A first end and a second end of the swing arm are coupled to the dresser and the base, respectively, and the at least one damper is disposed inside the swing arm. Any axial vibration of the dresser or the swing arm during dressing for the carrier can be compensated or attenuated by the damper in an active manner properly, so as to make the surface of the carrier flatter and more uniform, which not only improves a removal rate of material and a polishing result of the surface in the subsequent chemical mechanical planarization process, but also prolongs the service life of the carrier. The present disclosure further relates to a polishing system for dressing the carrier by using the said dressing device.

Provided is a dressing device for a carrier. The dressing device comprises a dresser, a swing arm, a base and at least one damper. A first end and a second end of the swing arm are coupled to the dresser and the base, respectively, and the at least one damper is disposed inside the swing arm. Any axial vibration of the dresser or the swing arm during dressing for the carrier can be compensated or attenuated by the damper in an active manner properly, so as to make the surface of the carrier flatter and more uniform, which not only improves a removal rate of material and a polishing result of the surface in the subsequent chemical mechanical planarization process, but also prolongs the service life of the carrier. The present disclosure further relates to a polishing system for dressing the carrier by using the said dressing device.

Disclosed is a polishing head for a polishing apparatus for polishing a quadrangular substrate using a polishing pad attached to a polishing table, comprising a head body portion, a plurality of elastic bags disposed in a surface of the head body portion, which is to face the polishing table, and a substrate holding plate for holding the substrate, the substrate holding plate being pressed by the elastic bags in a direction away from the head body portion, the head body portion being provided with channels for bags, which are in communication with the respective elastic bags, the polishing head further including at least two support plates disposed between the elastic bags on one hand and the substrate holding plate on the other, the elastic bags being configured to press the substrate holding plate through the support plates.

Disclosed is a polishing head for a polishing apparatus for polishing a quadrangular substrate using a polishing pad attached to a polishing table, comprising a head body portion, a plurality of elastic bags disposed in a surface of the head body portion, which is to face the polishing table, and a substrate holding plate for holding the substrate, the substrate holding plate being pressed by the elastic bags in a direction away from the head body portion, the head body portion being provided with channels for bags, which are in communication with the respective elastic bags, the polishing head further including at least two support plates disposed between the elastic bags on one hand and the substrate holding plate on the other, the elastic bags being configured to press the substrate holding plate through the support plates.

A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers. Further, the controller obtains a film thickness profile of the substrate before polishing by use of a film thickness measuring device, and causes the substrate to be polished with an optimized polishing recipe created based on the response model and a target polishing amount, which is a difference between the film thickness profile of the substrate before polishing and the target film thickness of the substrate. A next substrate is polished with a new optimized polishing recipe which is created based on a target polishing amount of the next substrate and a response model corrected by use of the optimized polishing recipe and film thickness profiles of the substrate before and after polishing.

A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers. Further, the controller obtains a film thickness profile of the substrate before polishing by use of a film thickness measuring device, and causes the substrate to be polished with an optimized polishing recipe created based on the response model and a target polishing amount, which is a difference between the film thickness profile of the substrate before polishing and the target film thickness of the substrate. A next substrate is polished with a new optimized polishing recipe which is created based on a target polishing amount of the next substrate and a response model corrected by use of the optimized polishing recipe and film thickness profiles of the substrate before and after polishing.

The present disclosure provides a grinding cup for detachable connection to the output drive shaft of a grinding machine for grinding buttons on drill bits or cutters. The grinding cup has top and bottom surfaces and consists of a lower grinding section and an upper body section co-axial with the grinding section to form a grinding cup with a centrally disposed recess formed in the bottom surface of the grinding section having the desired profile for the button to be ground. The improvement of the present invention is characterized by the upper body section having a centrally disposed upright drive section sized and shaped to fit within a co-axial recess in a free end of the output drive shaft. The upright drive section has a first support section extending from a top surface of the upper body section and a co-axial drive section on the upright drive section extending from a top surface of the first support section to a free end of the upper drive section. The co-axial drive section has a lower cam portion with an elliptical cross section, shaped and sized to fit within a corresponding pair of lobed grooves in a sidewall of the co-axial recess in the output drive shaft and an upper portion, co-axial with the lower cam portion having a circular cross-section slightly less than the diameter of an upper portion of the co-axial recess in the output drive shaft. Retaining means for detachably connecting the grinding cup to the output drive shaft of the grinding machine are provided on the upright drive section, preferably on or in association with the first support section.

In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30A for holding the polishing pad 10 and a top ring 31A for holding the semiconductor wafer 16. A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31A. The arm torque detection section 26 detects arm torque applied to the swing arm 110. An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.