A method of conditioning a polishing pad includes positioning a conditioning head to bring a conditioning pad into contact with a polishing surface of a polishing pad. The method further includes generating a first pressure signal using a first pressure sensor based on a force being applied to the polishing surface by the conditioning pad. The method further includes generating a surface condition signal using an optical scanner. The method further includes adjusting the positioning of the conditioning pad in response to at least one of the first pressure signal or the surface condition signal.

A method of conditioning a polishing pad includes positioning a conditioning head to bring a conditioning pad into contact with a polishing surface of a polishing pad. The method further includes generating a first pressure signal using a first pressure sensor based on a force being applied to the polishing surface by the conditioning pad. The method further includes generating a surface condition signal using an optical scanner. The method further includes adjusting the positioning of the conditioning pad in response to at least one of the first pressure signal or the surface condition signal.

An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner to hold a conditioning disk against the polishing surface, an in-situ polishing pad thickness monitoring system, and a controller. The controller is configured to store data associating each of a plurality of conditioner disk products with a respective threshold value, receive an input selecting a conditioner disk product from the plurality of conditioner disk products, determine a particular threshold value associated with the selected conditioner disk product, receive a signal from the monitoring system, generate a measure of a pad cut rate from the signal, and generate an alert if the pad cut rate falls beyond the particular threshold value.

An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner to hold a conditioning disk against the polishing surface, an in-situ polishing pad thickness monitoring system, and a controller. The controller is configured to store data associating each of a plurality of conditioner disk products with a respective threshold value, receive an input selecting a conditioner disk product from the plurality of conditioner disk products, determine a particular threshold value associated with the selected conditioner disk product, receive a signal from the monitoring system, generate a measure of a pad cut rate from the signal, and generate an alert if the pad cut rate falls beyond the particular threshold value.

Embodiments of a polishing apparatus are provided. The polishing apparatus includes a polishing pad having a polishing surface. The polishing apparatus also includes a dispensing device including a dispensing arm located over the polishing pad and a liquid nozzle disposed on the dispensing arm. The liquid nozzle is configured to dispense washing liquid onto the polishing surface along a dispensing direction. The dispensing direction has an acute angle with respect to the polishing surface.

Embodiments of a polishing apparatus are provided. The polishing apparatus includes a polishing pad having a polishing surface. The polishing apparatus also includes a dispensing device including a dispensing arm located over the polishing pad and a liquid nozzle disposed on the dispensing arm. The liquid nozzle is configured to dispense washing liquid onto the polishing surface along a dispensing direction. The dispensing direction has an acute angle with respect to the polishing surface.

A substrate cleaning device and a substrate polishing device are provided. The substrate cleaning device is provided in a substrate polishing device, which includes a polishing table having a polishing surface for polishing a substrate and a top ring holding the substrate with a membrane while surrounding an outer peripheral part of the substrate with a retainer ring, and cleaning the surface after polishing. The top ring is freely movable between a substrate polishing position above the table and a substrate handover position at a side of the table. The substrate cleaning device is provided corresponding to a cleaning position between the polishing and handover positions, and includes a first spray unit including cleaning nozzles for spraying cleaning liquid on the substrate, membrane, and retainer ring at the cleaning position; and a second spray unit including a substrate rinse nozzle spraying rinse liquid onto the substrate at the cleaning position.

A method for raising a polishing pad for polishing a silicon wafer, wherein a polishing pad made of foamed urethane resin is attached to a polishing machine, after dressing is performed, dummy polishing is performed, after processing to remove the polishing residues that have built up in the polishing pad by the dummy polishing is then performed, an amount of polishing residues in the polishing pad is measured, and a rise of the polishing pad subjected to the dummy polishing is judged based on the measured amount of polishing residues. As a result, a method for raising a polishing pad can improve the particle level in the polishing pad life early stage.

A method for raising a polishing pad for polishing a silicon wafer, wherein a polishing pad made of foamed urethane resin is attached to a polishing machine, after dressing is performed, dummy polishing is performed, after processing to remove the polishing residues that have built up in the polishing pad by the dummy polishing is then performed, an amount of polishing residues in the polishing pad is measured, and a rise of the polishing pad subjected to the dummy polishing is judged based on the measured amount of polishing residues. As a result, a method for raising a polishing pad can improve the particle level in the polishing pad life early stage.

A chemical mechanical polishing method is provided, including polishing a batch of wafers in sequence on a polishing surface of a polishing pad; conditioning the polishing surface with a pad conditioner, wherein the pad conditioner is operable to apply downward force according to a predetermined downward force stored in a controller to condition the polishing surface; measuring the downward force applied by the pad conditioner with a measurement tool when the pad conditioner is at a home position and after conditioning the polishing surface; comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and calibrating the downward force applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.