A chemical mechanical polishing method is provided, including polishing a batch of wafers in sequence on a polishing surface of a polishing pad; conditioning the polishing surface with a pad conditioner, wherein the pad conditioner is operable to apply downward force according to a predetermined downward force stored in a controller to condition the polishing surface; measuring the downward force applied by the pad conditioner with a measurement tool when the pad conditioner is at a home position and after conditioning the polishing surface; comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and calibrating the downward force applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.

A method includes measuring a first thickness at a first location of the polishing pad and a second thickness at a second location of the polishing pad; obtaining a first reference thickness at the first location of the polishing pad, wherein the first reference thickness is an average thickness of multiple thicknesses at the first location; obtaining a second reference thickness at the second location of the polishing pad, wherein the second reference thickness is an average thickness of multiple thicknesses at the second location; calculating a first thickness difference; calculating a second thickness difference; modifying a conditioning parameter value at the first location of the polishing pad; and sweeping a conditioner across a surface of the polishing pad; and applying a downforce or a sweeping speed to the conditioner that urges the conditioner against the first location of the polishing pad according to the modified conditioning parameter value.

A method includes measuring a first thickness at a first location of the polishing pad and a second thickness at a second location of the polishing pad; obtaining a first reference thickness at the first location of the polishing pad, wherein the first reference thickness is an average thickness of multiple thicknesses at the first location; obtaining a second reference thickness at the second location of the polishing pad, wherein the second reference thickness is an average thickness of multiple thicknesses at the second location; calculating a first thickness difference; calculating a second thickness difference; modifying a conditioning parameter value at the first location of the polishing pad; and sweeping a conditioner across a surface of the polishing pad; and applying a downforce or a sweeping speed to the conditioner that urges the conditioner against the first location of the polishing pad according to the modified conditioning parameter value.

Provided herein are chemical-mechanical planarization (CMP) systems and methods to reduce metal particle pollution on dressing disks and polishing pads. Such methods may include contacting a dressing disk and at least one conductive element with an electrolyte solution and applying direct current (DC) power to the dressing disk and the at least one conductive element.

Provided herein are chemical-mechanical planarization (CMP) systems and methods to reduce metal particle pollution on dressing disks and polishing pads. Such methods may include contacting a dressing disk and at least one conductive element with an electrolyte solution and applying direct current (DC) power to the dressing disk and the at least one conductive element.

The invention relates to a polishing machine (10) and to a method for polishing optical waveguides, the polishing machine comprising a polishing disk (13) having a plug socket (14) for holding a plug with an optical waveguide, a polishing platform (15) for receiving an abrasive, a positioning device (17) for relative positioning of the polishing disk and of the polishing platform between a polishing position and a set-up position (16), and a drive device for executing a relative polishing movement between the polishing platform and the polishing disk in the polishing position, wherein the polishing machine has a cleaning device for applying dry ice to the polishing platform and/or to the polishing disk.

The invention relates to a polishing machine (10) and to a method for polishing optical waveguides, the polishing machine comprising a polishing disk (13) having a plug socket (14) for holding a plug with an optical waveguide, a polishing platform (15) for receiving an abrasive, a positioning device (17) for relative positioning of the polishing disk and of the polishing platform between a polishing position and a set-up position (16), and a drive device for executing a relative polishing movement between the polishing platform and the polishing disk in the polishing position, wherein the polishing machine has a cleaning device for applying dry ice to the polishing platform and/or to the polishing disk.

Provided is a CMP conditioner comprising: a substrate, multiple abrasive bars, and multiple slide blocks. The substrate is divided into a central surface and an outer surface. The central surface is a recessed part. The outer surface encompasses the central surface. Multiple mounting holes are recessed from the outer surface. The abrasive bars are each respectively mounted in the mounting holes. Each of the multiple abrasive bars comprises a bar body and an abrasive particle. The abrasive particle is mounted on a top surface of the abrasive bar. The multiple slide blocks are distributed among the mounting holes of the outer surface. Each of the multiple slide blocks comprises a slide dressing surface. The present invention utilizes the slide blocks to reduce the contact between the substrate and a polishing mat efficiently. The slide blocks may decrease dissolving out of metal components within the substrate and the pollution induced.

Provided is a CMP conditioner comprising: a substrate, multiple abrasive bars, and multiple slide blocks. The substrate is divided into a central surface and an outer surface. The central surface is a recessed part. The outer surface encompasses the central surface. Multiple mounting holes are recessed from the outer surface. The abrasive bars are each respectively mounted in the mounting holes. Each of the multiple abrasive bars comprises a bar body and an abrasive particle. The abrasive particle is mounted on a top surface of the abrasive bar. The multiple slide blocks are distributed among the mounting holes of the outer surface. Each of the multiple slide blocks comprises a slide dressing surface. The present invention utilizes the slide blocks to reduce the contact between the substrate and a polishing mat efficiently. The slide blocks may decrease dissolving out of metal components within the substrate and the pollution induced.

A method for fabricating a semiconductor device includes providing a polishing pad which includes a first region and a second region separated from each other by a fence, loading a wafer onto the first region, providing a slurry solution onto the first region, providing an ultrapure water onto the second region, turning the polishing pad to polish a surface of the wafer, and unloading the wafer from the polishing pad after polishing on the surface of the wafer is completed, wherein the fence includes a first fence extending from a center of the polishing pad toward an edge of the polishing pad in a first horizontal direction, and a second fence extending from the center of the polishing pad toward the edge of the polishing pad in a second horizontal direction different from the first horizontal direction.