A method for performing a chemical mechanical polishing (CMP) is disclosed. The method includes supplying a slurry onto a polishing pad, holding a first wafer against the polishing pad by a first polishing head, holding a second wafer against the polishing pad by a second polishing head, and rotating the polishing pad.

Provided is a conditioner including a conditioning arm on a polishing pad that is configured to chemically mechanically polish a substrate based on slurry, a conditioning disk on the conditioning arm that is configured to condition the polishing pad, a dilution solution injector on a first side of the conditioning arm and configured to inject a dilution solution to the slurry introduced into a space under the conditioning disk, and a sonicator on a second side of the conditioning arm and configured to apply an ultrasonic wave to debris generated from the polishing pad.

Provided is a conditioner including a conditioning arm on a polishing pad that is configured to chemically mechanically polish a substrate based on slurry, a conditioning disk on the conditioning arm that is configured to condition the polishing pad, a dilution solution injector on a first side of the conditioning arm and configured to inject a dilution solution to the slurry introduced into a space under the conditioning disk, and a sonicator on a second side of the conditioning arm and configured to apply an ultrasonic wave to debris generated from the polishing pad.

A method of processing chemical mechanical polishing (CMP) pad conditioners includes providing the CMP pad conditioner including conditioner substrate that is a metal, ceramic or a metal-ceramic material with a plurality of hard conditioner particles with a Vickers hardness greater than 3,000 Kg/mm.sup.2 bonded to a top surface of the conditioner substrate, and a slurry including an aqueous medium and a plurality of hard slurry particles having a hardness greater than 3,000 Kg/mm.sup.2. The surface of the pad conditioner is polished in a CMP apparatus using a polishing pad. After the polishing each conditioner particle has at least one exposed facet, and the plurality of hard conditioner particles have a maximum average protrusion-to-protrusion flatness (PPF) difference of 20 microns, and a sharpest edge measured by a value of a cutting edge radius (CER) that lies at an edge of the facet for at least 80% of the facets.

A dressing method of a cutting blade includes a first cutting step of causing the cutting blade to cut into a dressing board held by a holding surface of a chuck table with a cutting depth that does not surpass the length of the region of roundness in the radial direction of the cutting blade to form a cut groove in the dressing board, and a second cutting step of causing the cutting blade to further cut into the groove bottom of the cut groove formed in the first cutting step with a cutting depth that does not surpass the length of the region of roundness in the radial direction of the cutting blade to carry out cutting on the groove bottom with tracing of the cut groove.

A multi-step conditioning process includes an initial step of preparation (i.e., pre-conditioning) and a subsequent step of restoration (i.e., conditioning and polishing intermittently, in situ conditioning, or combinations thereof). An example of such an enhancement is achieved using a CMP pad conditioner brush-and-abrasive hybrid that has a combination of brush bristles and abrasive elements. The abrasive elements are readily deployed for pre-conditioning as the brush bristles are pressed (flexed) so that they are not in use. And the brush bristles are readily deployed for conditioning during pad restoration as less downforce is applied to the conditioner. Thus, a universal hybrid conditioner is capable of alteration of its aggressiveness without physically changing a conditioner on a polisher tool.

A dressing member for use in dressing grinding stones contains spherical abrasive grits, and a binder fixing the abrasive grits. Preferably, the abrasive grits may be silica grits, and the abrasive grits may have a ratio of minor axis to major axis of 0.7 or greater. Also preferably, the abrasive grits may be contained at a content of 20 wt % or higher but 80 wt % or lower. Also preferably, the abrasive grits may have an average grit size of 0.1 ?m or greater but 3.5 ?m or smaller. Also preferably, the binder may be a vitrified bond or a resin bond.

A dressing member for use in dressing grinding stones contains spherical abrasive grits, and a binder fixing the abrasive grits. Preferably, the abrasive grits may be silica grits, and the abrasive grits may have a ratio of minor axis to major axis of 0.7 or greater. Also preferably, the abrasive grits may be contained at a content of 20 wt % or higher but 80 wt % or lower. Also preferably, the abrasive grits may have an average grit size of 0.1 ?m or greater but 3.5 ?m or smaller. Also preferably, the binder may be a vitrified bond or a resin bond.

An apparatus for chemical mechanical polishing includes a pad conditioner. The pad conditioner includes a first disk having a first surface and a second disk having a second surface. The first surface has a first plurality of abrasives with a first mean size and the second surface has a second plurality of abrasives with a second mean size greater than the first mean size.

An apparatus for chemical mechanical polishing includes a pad conditioner. The pad conditioner includes a first disk having a first surface and a second disk having a second surface. The first surface has a first plurality of abrasives with a first mean size and the second surface has a second plurality of abrasives with a second mean size greater than the first mean size.