Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.

A method of processing a substrate is disclosed. The method includes the following steps: providing a substrate body having a surface; placing a die on the surface, wherein the die acts as a catalyst; immersing the substrate body and the die in a reaction solution; and processing the substrate body via a chemical reaction occurring on the surface through the reaction solution and the catalyst.

A method of processing a substrate is disclosed. The method includes the following steps: providing a substrate body having a surface; placing a die on the surface, wherein the die acts as a catalyst; immersing the substrate body and the die in a reaction solution; and processing the substrate body via a chemical reaction occurring on the surface through the reaction solution and the catalyst.

A wire sawing apparatus of one embodiment comprises: a wire for cutting an ingot; an ingot conveyor unit for conveying the ingot to the wire; a nozzle for supplying slurry to the wire; and a dispersed slurry blocking unit disposed above the ingot sawed by the wire, so as to absorb at least a part of the slurry dispersed from the lateral sides of the ingot cut by the wire.

A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide and obtaining a substrate by cutting the ingot. Then, in the step of obtaining a substrate, cutting proceeds in a direction α in which an angle β formed with respect to a <11-20> direction or a <1-100> direction of the ingot is 15°±5° in an orthogonal projection on a {0001} plane.

A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide and obtaining a substrate by cutting the ingot. Then, in the step of obtaining a substrate, cutting proceeds in a direction α in which an angle β formed with respect to a <11-20> direction or a <1-100> direction of the ingot is 15°±5° in an orthogonal projection on a {0001} plane.

A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.

Provided is a cutting method of cutting a workpiece by using a cutting apparatus including a chuck table configured to hold the workpiece and a cutting unit having a cutting blade configured to cut the workpiece held by the chuck table and an ultrasonic vibrator configured to ultrasonically vibrate the cutting blade in a radial direction of the cutting blade. The cutting method includes a holding step of holding the workpiece by the chuck table, and a cutting step of performing ultrasonic cutting that cuts the workpiece by the cutting blade vibrated ultrasonically and normal cutting that cuts the workpiece by the cutting blade not vibrated ultrasonically on the same cutting line of a plurality of cutting lines set on the workpiece.

A tool unit applied to ultrasonic machining, includes an amplitude transformer, a machining head and a connecting portion. The machining head has a micron-sized array structure. With the connecting portion, the amplitude transformer and the machining head are assembled together and the connecting portion has a change in shape. The machining head includes a substrate and at least one diamond layer. An upper surface of substrate touches the amplitude transformer or the connecting portion. And the diamond layer is disposed on an lower surface of substrate. The material of the substrate is selected from a group of a steel material with thermal expansion coefficient ranged from 10.70×10.sup.−6K.sup.−1 to 17.30×10.sup.−6K.sup.−1, tungsten carbide and combination thereof. The material of the diamond layer is selected from a group of a diamond material with thermal expansion coefficient ranged from 1.00×10.sup.−6K.sup.−1 to 2.50×10.sup.−6K.sup.−1, a polycrystalline diamond, a diamond sintered body and combination thereof.

A tool unit applied to ultrasonic machining, includes an amplitude transformer, a machining head and a connecting portion. The machining head has a micron-sized array structure. With the connecting portion, the amplitude transformer and the machining head are assembled together and the connecting portion has a change in shape. The machining head includes a substrate and at least one diamond layer. An upper surface of substrate touches the amplitude transformer or the connecting portion. And the diamond layer is disposed on an lower surface of substrate. The material of the substrate is selected from a group of a steel material with thermal expansion coefficient ranged from 10.70×10.sup.−6K.sup.−1 to 17.30×10.sup.−6K.sup.−1, tungsten carbide and combination thereof. The material of the diamond layer is selected from a group of a diamond material with thermal expansion coefficient ranged from 1.00×10.sup.−6K.sup.−1 to 2.50×10.sup.−6K.sup.−1, a polycrystalline diamond, a diamond sintered body and combination thereof.