A composite body has a cermet member, a metal member and an intermediate member. The cermet member includes a cermet oxide phase and a cermet metal phase. The cermet oxide phase contains a Ni-containing oxide or an Fe-containing oxide. The cermet metal phase contains Ni. The intermediate layer contains Cu. The mass proportions of Cu in the cermet metal phase at points which are spaced apart by 10, 50, 100 and 1000 μm from the interface between the cermet member and the intermediate layer to the cermet member side are denoted by C10, C50, C100 and C1000 (mass %). When the mass proportions of Cu in the cermet oxide phase at points which are spaced apart by 10 and 100 μm from the interface to the cermet member side are denoted by M10 and M100 (mass %), C10>C50>C100>C1000, and 5>M10−M100>−5.

A polyvinyl acetal resin film, having an average surface roughness Rz of at least one surface of 3.0 μm or less; a birefringence Δn of 3.0×10.sup.−4 or less; and an average thickness of 200 μm or less.

To provide a copper-clad laminate which maintains adhesion between a resin film and a conductor layer and which suppresses the occurrence of wrinkles. A copper-clad laminate has a base film containing a thermoplastic resin, an underlying metal layer film-formed on a surface of the base film by a dry plating method, and a copper layer film-formed on a surface of the underlying metal layer. The underlying metal layer has a mean thickness of 0.3 to 1.9 nm. Since the underlying metal layer has a mean thickness of 0.3 nm or more, it is possible to maintain adhesion between the base film and a conductor layer. Since the underlying metal layer has a mean thickness of 1.9 nm or less, it is possible to suppress an increase in the temperature of a film during film-forming of the underlying metal layer, and it is possible to suppress the occurrence of wrinkles.

A clad material includes a first layer made of stainless steel and a second layer made of Cu or a Cu alloy and roll-bonded to the first layer. In the clad material, a grain size of the second layer measured by a comparison method of JIS H 0501 is 0.150 mm or less.

This invention relates to a method for manufacturing a room temperature shrinkable tube using water and an expansion agent and a flexible busbar using the same, and is constituted by including a busbar core 10 and a shrinkable tube 20 as main configurations. The shrinkable tube is expanded using an aqueous system of immersing and expanding the shrinkable tube in a solution mixed with water and an expansion agent for a predetermined time, the expanded shrinkable tube is naturally shrunk at room temperature and simply tubed on an outer circumferential surface of a busbar core to be insulated and coated, and in particular, the busbar core maintains the integrity with the shrinkable tube by a structure engaging with an intaglio-relief structure by a shrinkage force of the shrinkable tube so as to prevent deformation including lifting and wrinkling of the shrinkable tube when the shape of the busbar is deformed.

A metal strip and a process for manufacturing such a metal strip are disclosed. In order to be able to reproducibly manufacture a durable metal strip, it is proposed for a butt seam to extend essentially between a first cladding layer of a first strip transverse portion and a second strip transverse portion.

A rubber resin material with a high thermal conductivity and a high dielectric constant and a metal substrate using the same are provided. The rubber resin material includes a rubber resin composition, at least one first inorganic filler, and at least one second inorganic filler. The rubber resin composition includes 30 wt % to 60 wt % of a liquid rubber, 10 wt % to 30 wt % of a polyphenylene ether resin, and 20 wt % to 40 wt % of a crosslinker. A molecular weight of the liquid rubber ranges from 2500 g/mol to 6000 g/mol. The at least one first inorganic filler is selected from the group consisting of aluminum oxide, boron nitride, magnesium oxide, zinc oxide, aluminum nitride, silicon carbide, and aluminum silicate. The at least one second inorganic filler is selected from the group consisting of silica, strontium titanate, calcium titanate, and titanium dioxide.

A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. The solar cell can also include a conductive contact disposed on the semiconductor region with the conductive contact including a conductive foil bonded to the semiconductor region.

A method for producing a laminate that includes at least the following: providing a first intermediate laminate comprising a carrier substrate including a support therein and a peelable metal layer formed on at least one surface of the carrier substrate; forming, in a section not serving as a product of the first intermediate laminate, a first hole reaching at least the support in the carrier substrate from a surface of the first intermediate laminate, to prepare a second intermediate laminate with the first hole; stacking and disposing on the surface where the first hole is formed of the second intermediate laminate, an insulating material and a metal foil in this order when viewed from the surface; and pressurizing the second intermediate laminate, the insulating material and the metal foil in the stacking direction thereof with heating, to prepare a third intermediate laminate where the first hole is filled with the insulating material; and performing treatment with a chemical agent on the third intermediate laminate.

A power module substrate allows prompt heat dissipation from a semiconductor device and avoids separation of a ceramic plate and a copper plate at their joint interface and cracks in the ceramic plate. A power module substrate for mounting a semiconductor device includes a ceramic plate, a copper circuit plate on a main surface of the ceramic plate, and a heat dissipation copper plate on a surface of the ceramic plate opposite to the main surface. The copper circuit plate includes at least one first copper circuit plate and at least one second copper circuit plate different from the first circuit board. The first copper circuit plate includes a first portion on which the semiconductor device is mountable, and a second portion outward from the first portion and surrounding the first portion and thinner than the first portion.