Provided are a composite structure that is formed by joining a metal member and a molded article of a polyarylene sulfide resin composition and is more excellent in terms of joint strength and heat cycle resistance and a producing method therefor. More specifically, provided are a composite structure formed by joining a surface-roughened metal member and a PPS member, in which a number average value of developed area ratios (Sdr) of an interface measured at five random points on a surface of the surface-roughened metal member using a confocal microscope based on ISO 25178 is 5 [%] or more, and a melt viscosity of a PPS resin is 15 to 500 [Pa.Math.s], and a producing method therefor.

A film capacitor that includes a resin layer which has a first surface and a second surface and in which there are particles on at least one of the first surface and the second surface; and a metal layer on the first surface of the resin layer, wherein there are more particles in number on the at least one of the first surface and the second surface of the resin layer than inside the resin layer.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A blade includes an edge to be pressed against an end portion of a carrier film to fold the end portion upwards from a sheet. A clamp mechanism peels the carrier film off from the sheet by moving while clamping the upwardly folded end portion of the carrier film.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

Systems, methods, and devices of the various embodiments provide for the creation of holey graphene meshes (HGMs) and composite articles including HGMs. Various embodiments provide solvent-free methods for creating arrays of holes on holey graphene-based articles formed from dry compression (such as films, discs, pellets), thereby resulting in a HGM. In further embodiments, a HGM can used as part of a composite, such as by: 1) embedding a HGM into another matrix material such as carbon, polymer, metals, metal oxides, etc; and/or (2) the HGM serving as a matrix by filling the holes of the HGM or functionalizing the HGM body with another one or more materials. In various embodiments, HGM can also be made as a composite itself by creating holes on dry-compressed articles pre-embedded with one or more other materials.

Disclosed herein is an improved membrane, separator and/or method for forming a multilayer microporous membrane for use in an improved battery separator, particularly a battery separator for a lithium ion secondary battery. Also disclosed herein is the multilayer microporous membrane formed by this method, which has properties that compete with or exceed those of wet process, coated or uncoated, membranes that are also useable in battery separators. Also disclosed are battery separators comprising the multilayer microporous membrane and batteries, vehicles, or devices comprising the separators. The method may comprise at least the following steps: (1) forming a stretched first non-porous precursor film that has pores due to the stretching of a first non-porous precursor film; (2) separately forming a second stretched non-porous precursor film that has pores due to the stretching of a second non-porous precursor film; and then (3) laminating the stretched first non-porous precursor and the stretched second non-porous precursor.

Disclosed is a stretchable, three-dimensional tubular structure formed due to processing-induced wrinkles to result in a platform for stretchable interactive electronics. The three-dimensional tubular structure is fabricated simply by releasing a pre-stretched two-dimensional film-substrate precursor, and the resulting wrinkled surface shows a strong directional dependence that drives the tube formation.

A radio wave absorbing material including a fluoropolymer. The fluoropolymer contains a vinylidene fluoride unit, and the radio wave absorbing material absorbs a radio wave having a frequency in a range of 1 MHz to 100 MHz.

A multi-layer ceramic electronic component includes a multi-layer unit and a side margin. The multi-layer unit includes a capacitance forming unit, a cover, and a side surface. The capacitance forming unit includes ceramic layers that are laminated in a first direction and contain boron, and internal electrodes disposed between the ceramic layers. The cover covers the capacitance forming unit in the first direction. The side surface faces in a second direction orthogonal to the first direction. The side margin covers the side surface in the second direction and has a lower boron concentration than a boron concentration of the ceramic layers.