A semiconductor device of an embodiment includes: a first trench located in a silicon carbide layer extending in a first direction; a second trench and a third trench adjacent to each other in the first direction; n type first silicon carbide region; p type second silicon carbide region on the first silicon carbide region; n type third silicon carbide region on the second silicon carbide region; p type fourth silicon carbide region between the first silicon carbide region and the second trench; p type fifth silicon carbide region between the first silicon carbide region and the third trench; p type sixth silicon carbide region shallower than the second trench between the second trench and the third trench and having a p type impurity concentration higher than that of the second silicon carbide region; a gate electrode in the first trench; a first electrode, and a second electrode.

External interaction with a mover in an independent cart system is allowed at known locations along the track. The mover is initially propelled along the track in a first operating state. When the mover arrives at a station, the controller generates a signal to alert the external actuator of the presence of a mover at the station. After waiting at the station for a first predefined time interval, the controller switches to a second operating state, in which the coils are de-energized or the controller is reconfigured to operate in a less responsive manner than in the first operating state. The controller remains in the second operating state for a second predefined interval, during which the external actuator interacts with the mover or a load on the mover. After the second predefined interval, the controller enters a third operating state, and the controller propels the mover away from the station.

Therefore, a first aspect provides a brake module for a magnetically suspended vehicle. The brake module comprising a first magnetically active brake element coupled to a first brake magnet actuator comprised by the brake module. The first brake magnet actuator is arranged to control the first magnetically active element to provide a first magnetic brake field of a pre-determined magnitude at a first pre-determined location relative to the brake module, of which first magnetic brake field the first field lines are, in use, substantially horizontal and substantially perpendicular to a direction of travel of the vehicle. By providing an Eddy current brake having magnetic field components that are substantially horizontally oriented, influence of magnetic forces excited by the Eddy currents generated on the (vertical) suspension are reduced and preferably minimised.

A wire supporting structure supporting an electric wire extending between a bogie and a carbody in a railcar includes: a support supported by the carbody and including a fitted portion; a carbody-side coupling device supported by the carbody; an electric wire connected to an electrical apparatus of the bogie; an electric wire-side coupling device provided at a tip end of the electric wire and connected to the carbody-side coupling device; and a bracket connected to a part of the electric wire, the part being located close to the electric wire-side coupling device, the bracket including a fitting portion fitted to the fitted portion of the support, the bracket being supported by the support with the fitting portion fitted in the fitted portion.

A semiconductor device of an embodiment includes a first trench extending in a first direction in a silicon carbide layer; a second trench and a third trench adjacent to each other in the first direction; a first silicon carbide region of n type; a second silicon carbide region of p type on the first silicon carbide region; a third silicon carbide region of n type on the second silicon carbide region; a fourth silicon carbide region of p type between the first silicon carbide region and the second trench; a fifth silicon carbide region of p type between the first silicon carbide region and the third trench; a gate electrode in the first trench; a first electrode, part of which is in the second trench, the first electrode contacting the first silicon carbide region between the fourth silicon carbide region and the fifth silicon carbide region; and a second electrode.

A semiconductor device of an embodiment includes: a first trench located in a silicon carbide layer extending in a first direction; a second trench and a third trench adjacent to each other in the first direction; n type first silicon carbide region; p type second silicon carbide region on the first silicon carbide region; n type third silicon carbide region on the second silicon carbide region; p type fourth silicon carbide region between the first silicon carbide region and the second trench; p type fifth silicon carbide region between the first silicon carbide region and the third trench; p type sixth silicon carbide region shallower than the second trench between the second trench and the third trench and having a p type impurity concentration higher than that of the second silicon carbide region; a gate electrode in the first trench; a first electrode, and a second electrode.

A semiconductor device of an embodiment includes: a first trench in a silicon carbide layer and extending in a first direction; a second trench and a third trench located in a second direction orthogonal to the first direction with respect to the first trench and adjacent to each other in the first direction, n type first silicon carbide region, p type second silicon carbide region on the first silicon carbide region, n type third silicon carbide region on the second silicon carbide region, p type fourth silicon carbide region between the first silicon carbide region and the second trench, and p type fifth silicon carbide region located between the first silicon carbide region and the third trench; a gate electrode in the first trench; a first electrode; and a second electrode. A part of the first silicon carbide region is located between the second trench and the third trench.

A cargo container loading and unloading system for a transportation system, the cargo container loading and unloading system including a loading zone; and at least one opening connecting the loading zone to a transportation tube of the transportation system.

An overhead transport system includes a suspended railway and a motorized carrier configured to travel along the suspended railway. The motorized carrier includes a motorized trolley configured to move the motorized carrier along the suspended railway, chassis/beam configured to carry an object below the motorized trolley, and a bumper and deflection system configured to prevent the object from contacting another object.

A semiconductor device of an embodiment includes a first trench extending in a first direction in a silicon carbide layer; a second trench and a third trench adjacent to each other in the first direction; a first silicon carbide region of n type; a second silicon carbide region of p type on the first silicon carbide region; a third silicon carbide region of n type on the second silicon carbide region; a fourth silicon carbide region of p type between the first silicon carbide region and the second trench; a fifth silicon carbide region of p type between the first silicon carbide region and the third trench; a gate electrode in the first trench; a first electrode, part of which is in the second trench, the first electrode contacting the first silicon carbide region between the fourth silicon carbide region and the fifth silicon carbide region; and a second electrode.