A MicroElectroMechanical System is provided, with an active element configured to carry out an electromechanical function, the active element including, from an upper face to a lower face substantially parallel to the upper face, an active layer, a core layer, and a retention layer, the active layer being configured to, under the effect of a first electric signal, go into a mechanically stressed state, configured to generate a bending of the active element in a direction perpendicular to a front face thereof, and vice versa, the active layer, the core layer, and the retention layer being arranged so that a neutral axis, associated with an elongation of zero in a case of bending of the active element, is located in a volume of one or the other of the core layer and of the retention layer, and the core layer further includes at least 20% recesses in its volume.

Examples include a fluidic die. The fluidic die comprises an array of field effect transistors including field effect transistors of a first size and field effect transistors of a second size. At least one connecting member interconnects at least some of the field effect transistors of the array of field effect transistors. The fluidic die further comprises a first fluid actuator connected to a first set of field effect transistors having at least one field effect transistor of the first size. The die includes a second fluid actuator connected to a second respective set of field effect transistors having a first respective field effect transistor of the second size interconnected to at least one other field effect transistor of the array.

A microstructure may be provided by forming a metal layer such as a molybdenum layer over a substrate. An aluminum nitride layer is formed on a top surface of the metal layer. A surface portion of the aluminum nitride layer is converted into a continuous aluminum oxide-containing layer by oxidation. A dielectric spacer layer may be formed over the continuous aluminum oxide-containing layer. Contact via cavities extending through the dielectric spacer layer, the continuous aluminum oxide containing layer, and the aluminum nitride layer and down to a respective portion of the at least one metal layer may be formed using etch processes that contain a wet etch step while suppressing formation of an undercut in the aluminum nitride layer. Contact via structures may be formed in the contact via cavities. The microstructure may include a micro-electromechanical system (MEMS) device containing a piezoelectric transducer.

Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or “dishing” of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.

A method of manufacturing a panel transducer scale package includes securing acoustic components at predetermined locations on a first carrier substrate with a first surface of the acoustic components positioned adjacent to the first carrier substrate. ASIC components are also secured at predetermined locations on the first carrier substrate with a first surface of the ASIC components positioned adjacent to the first carrier substrate. Photoresist resin is applied over the acoustic components and the ASIC components such that a second surface of the acoustic components is left exposed from the photoresist resin. The first carrier substrate is removed to expose the first surface of the acoustic components and the first surface of the ASIC components. A buildup layer is formed including electrical pathways between each of the acoustic components and the ASIC components, and the photoresist resin is removed.

An actuator device includes a support portion, a movable portion, a connection portion which connects the movable portion to the support portion on a second axis, a first wiring which is provided on the connection portion, a second wiring which is provided on the support portion, and an insulation layer which includes a first opening exposing a surface opposite to the support portion in a first connection part located on the support portion in one of the first wiring and the second wiring and covers a corner of the first connection part. The rigidity of a first metal material forming the first wiring is higher than the rigidity of a second metal material forming the second wiring. The other wiring of the first wiring and the second wiring is connected to the surface of the first connection part in the first opening.

The present disclosure, in some embodiments, relates to a method of forming a micro-electromechanical system (MEMS) package. The method includes forming one or more depressions within a capping substrate. A back-side of a MEMS substrate is bonded to the capping substrate after forming the one or more depressions, so that the one or more depressions define one or more cavities between the capping substrate and the MEMS substrate. A front-side of the MEMS substrate is selectively etched to form one or more trenches extending through the MEMS substrate, and one or more polysilicon vias are formed within the one or more trenches. A conductive bonding structure is formed on the front-side of the MEMS substrate at a location contacting the one or more polysilicon vias. The MEMS substrate is bonded to a CMOS substrate having one or more semiconductor devices by way of the conductive bonding structure.

A semiconductor device comprises a substrate body with a surface, a conductor comprising a conductor material covering at least part of the surface, and a dielectric that is arranged on a part of the surface that is not covered by the conductor. Therein, the conductor is in contact with the substrate body, the conductor and the dielectric form a layer, and a bonding surface of the layer has surface topographies of less than 10 nm, with the bonding surface facing away from the substrate body. Moreover, the semiconductor device is free of a diffusion barrier.

A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area.

A display device having a narrow bezel region is provided. The display device includes a first layer and a second layer. The first layer includes a source driver and one part of a sensor, and the second layer includes a gate driver, a plurality of pixels, and the other part of the sensor. The plurality of pixels include a pixel in which a light-emitting element emits light and a pixel having a function of the gate driver. An opening portion where the one part of the sensor is formed and a first terminal connected to the source driver are provided on the top surface of the first layer, and a second terminal is provided on the opposite side of the surface where the pixels included in the second layer are arranged. The first terminal is bonded to the second terminal, so that they are electrically connected to each other and the sensor is formed. Since an output signal of the source driver is directly supplied through the first terminal to a wiring to which the plurality of pixels are connected, the source driver and the gate driver do not need to be provided in a peripheral region of a display region where the plurality of pixels are provided.