A microelectromechanical system (MEMS) device and method of fabrication are provided. The MEMS devices includes a silicon substrate. The silicon substrate includes a top surface. An interconnect is machined from the silicon substrate. The interconnect includes at a spring body that has least two spring arms. Each spring arm includes a first end distal from a center of the interconnect, a second end proximate the center of the interconnect, and a single turn of a constant curvature. Each spring arm is configured to move rotationally in a plane parallel to the top surface of the silicon substrate.

Disclosed is a micro pressure sensor including a plurality of modules that are operative over different ranges of pressure. The modules include a stack of at least two module layers, each module layer including a module body having walls that define a compartment and with the defined compartment partitioned into at least two sub-compartments, a port for fluid ingress or egress disposed in a first wall of the body, with remaining walls of the body being solid walls, a membrane affixed to a first surface of the module body covering the compartment, and an electrode affixed over a surface of the membrane.

A hermetically sealed component may comprise a glass substrate, a device with at least one electrical port associated with the glass substrate, and a glass cap. The glass cap may have at least one side wall. The glass cap may have a shaped void extending therethrough, from top surface of the glass cap to bottom surface of glass pillar. An electrically conductive plug may be disposed within the void, the plug configured to hermetically seal the void. The electrically conductive plug may be electrically coupled to the electrical port. The glass cap may be disposed on the glass substrate, with the at least one side wall disposed therebetween, to form a cavity encompassing the device. The side wall may contact the glass substrate and the glass cap to provide a hermetic seal, such that a first environment within the cavity is isolated from a second environment external to the cavity.

An MEMS microphone comprises a substrate; a cover covering the substrate and forming an acoustic cavity with the substrate, wherein the substrate of the acoustic cavity is provided with: an acoustic transducer disposed in a first region of the substrate; an integrated circuit chip comprising a first bonding pad and a second bonding pad, wherein the first bonding pad is connected to the acoustic transducer via lead wires, the second bonding pad communicates with a groove formed at a bottom of the integrated circuit chip; a metal connection layer is formed on a surface of the groove and a portion where the metal connection layer extends to a bottom surface of the integrated circuit chip serves as a metal connection area. The integrated circuit chip is connected to a second region of the substrate through the metal connection area.

In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

An integrated package method for MEMS element and ASIC chip includes forming a re-layout layer on a front surface of an ASIC wafer; coating an organic compound layer on the re-layout layer and applying a lithography process to the organic compound layer to from a microcavity array; aligning and bonding an electrode connection pad layer on a front surface of an MEMS element with the microcavity array to form a closed cavity structure; thinning and exposing a silicon substrate on a back surface of the MEMS element to a desired thickness; applying the lithographic process on the MEMS element to expose the electrode connection pad layer and an electrical contact area of the re-layout layer; and manufacturing a metal connection member connected to the electrode connection pad layer and the electrical contact area. An integrated package structure for MEMS element and ASIC chip is also provided.

A method for producing a wafer connection between a first and a second wafer. The method includes providing a first and second material for forming a eutectic alloy, providing a first wafer having a receiving structure for a die structure, filling the receiving structure with the first material, providing a second wafer having a die structure, the second material being situated on the die structure, providing a stop structure on the first and/or second wafer, so that when the two wafers are joined, a defined stop is provided, heating the first and second material at least to the eutectic temperature of the eutectic alloy, joining the first and second wafer so that the die structure is at least partly introduced into the receiving structure, the stop structure, the receiving structure, the die structure.

Microelectromechanical systems (MEMS) packages and methods of manufacture thereof are described. In an embodiment, a method of manufacturing a MEMS package may include attaching a MEMS structure having a capping structure thereon to a device wafer comprising a plurality of first devices formed therein to form a wafer level MEMS package; and singulating the device wafer having the MEMS structure attached thereto to form a plurality of chip scale MEMS packages.

Integrated circuit substrates having through silicon vias (TSVs) are described. The TSVs are vias extending through the silicon substrate in which the integrated circuitry is formed. The TSVs may be formed prior to formation of the integrated circuitry on the integrated circuit substrate, allowing the use of via materials which can be fabricated at relatively small sizes. The integrated circuit substrates may be bonded with a substrate having a microelectromechanical systems (MEMS) device. In some such situations, the circuitry of the integrated circuit substrate may face away from the MEMS substrate since the TSVs may provide electrical connection from the circuitry side of the integrated circuit substrate to the MEMS device.