A micro-electrical-mechanical system (MEMS) actuator configured to provide multi-axis movement, the micro-electrical-mechanical system (MEMS) actuator including: a first portion, a second portion, wherein the first portion and the second portion are displaceable with respect to each other, and a locking assembly configured to releasably couple the first portion and the second portion to attenuate displacement between the first portion and the second portion.

A piezo-resistor-based sensor, and a method to fabricate such sensor, comprise a sensor having at least a sensing element provided on a flexible structure, such as a membrane or cantilever or the like. The sensing element includes at least one piezo-resistor comprising at least a first region of the flexible structure doped with dopant atoms of a first type. The flexible structure furthermore comprises a second doped region within it, at least partially overlapping the first doped region, forming a shield for shielding the sensing element from external electrical field interference, wherein dopant atoms of the second doped region are of a second type opposite to the dopant atoms of the first doped region, for generating a charge depletion layer within the flexible structure at the overlapping region between the first doped region and the second doped region.

A microfluidic device for increasing convective clearance of particles from a fluid is provided. In some implementations, described herein the microfluidic device includes multiple layers that each define infusate, blood, and filtrate channels. Each of the channels have a pressure profile. The device can also include one or more pressure control features. The pressure control feature controls a difference between the pressure profiles along a length of the device. For example, the pressure control feature can control the difference between the pressure profile of the filtrate channel and the pressure profile of the blood channel. In some implementations, the pressure control feature controls the pressure difference between two channels such that the difference varies along the length of the channels by less than 50% of the pressure difference between the channels at the channels' inlets.

A stack type sensor package structure includes a substrate, a semiconductor chip disposed on the substrate, a frame disposed on the substrate and aside the semiconductor chip, a sensor chip disposed on the frame, a plurality of wires electrically connecting the sensor chip and the substrate, a transparent layer being of its position corresponding to the sensor chip, a support maintaining the relative position between the sensor chip and the transparent layer, and a package compound disposed on the substrate and partially covering the frame, the support, and the transparent layer. Thus, through disposing a frame within the stack type sensor package structure, the structural strength of the overall sensor package structure is reinforced, and the stability of the wiring of the sensor chip is effectively increased.

The present invention provides an infrared detector pixel structure and manufacturing method thereof. The structure comprises a conductive metal region on surface of the silicon substrate; an infrared detecting element located above the silicon substrate for detecting infrared light and generating electrical signal; and a conductive beam unit electrically connected to the infrared detecting element for transmitting the electrical signal to the conductive metal region; the conductive beam unit includes at least one conductive beam layer and multilayer conductive trench arranged in a vertical direction; two ends of the conductive beam are respectively in contact with two layers of conductive trenches whose bottom portions are not in the same horizontal plane; the infrared detecting element is in contact with one conductive trench one conductive beam; the conductive metal region is in contact with bottom portion of the other layer of conductive trench therein; the electrical signal is transmitted along the height direction of the conductive trench and the conductive beam, so as to be transmitted downward to the conductive metal region in a circuitous path in the vertical direction.

The present disclosure provides a semiconductor device, which includes a first substrate comprising an upper surface and a second substrate disposed over the first substrate. The semiconductor device also includes a first electrode disposed in the second substrate and configured to move in a direction substantially parallel to the upper surface in response to a pressure difference, and a second electrode disposed in the second substrate. The second electrode is configured to provide a capacitance in conjunction with the first electrode.

A static expansion method is performed by expanding a volume of a testing gas from V.sub.0 to V.sub.0+V.sub.1 between a second chamber of the volume V.sub.1 which is connected to an upstream side of a measurement chamber and a first chamber of the volume V.sub.0 which is connected to an upstream side of the second chamber, wherein the first camber is in communication with the second chamber via a first valve, wherein the second chamber is in communication with the measurement chamber via each of a second valve and an orifice or porous plug, respectively. When the first valve is opened and the second valve is closed, the testing gas flows from the first chamber via the second chamber into the measurement chamber only through the orifice or porous plug.

A overhanging device cavity structure comprises a substrate and a cavity disposed in or on the substrate. The cavity comprises a first cavity side wall and a second cavity side wall opposing the first cavity side wall on an opposite side of the cavity from the first cavity side wall. A support extends from the first cavity side wall to the second cavity side wall and at least partially divides the cavity. A device is disposed on, for example in direct contact with, the support and extends from the support into the cavity.

In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

A stack type sensor package structure includes a substrate, a semiconductor chip disposed on the substrate, a frame disposed on the substrate and aside the semiconductor chip, a sensor chip disposed on the frame, a plurality of wires electrically connecting the sensor chip and the substrate, a transparent layer being of its position corresponding to the sensor chip, a support maintaining the relative position between the sensor chip and the transparent layer, and a package compound disposed on the substrate and partially covering the frame, the support, and the transparent layer. Thus, through disposing a frame within the stack type sensor package structure, the structural strength of the overall sensor package structure is reinforced, and the stability of the wiring of the sensor chip is effectively increased.