The application describes an assembly for a MEMS transducer comprising a substrate and a membrane, wherein the membrane is formed so as to have a curved surface region.

A MEMS microphone includes a substrate having a cavity, a back plate provided over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, and spaced apart from the substrate and the back plate, a strut located at outer side of the diaphragm, having a lower surface in contact with an upper surface of the substrate and being integrally formed with the upper insulation layer to support the upper insulation layer to space the upper insulation layer from the diaphragm, and a bending prevention member provided on an upper surface of the back plate for preventing the back plate from being bent.

A method includes depositing a silicon layer over a first oxide layer that overlays a first silicon substrate. The method further includes depositing a second oxide layer over the silicon layer to form a composite substrate. The composite substrate is bonded to a second silicon substrate to form a micro-electro-mechanical system (MEMS) substrate. Holes within the second silicon substrate are formed by reaching the second oxide layer of the composite substrate. The method further includes removing a portion of the second oxide layer through the holes to release MEMS features. The MEMS substrate may be bonded to a CMOS substrate.

Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects.

A microphone including a casing having a front wall, a back wall, and a side wall joining the front wall to the back wall, a transducer mounted to the front wall, the transducer including a substrate and a transducing element, the transducing element having a transducer acoustic compliance dependent on the transducing element dimensions, a back cavity cooperatively defined between the back wall, the side wall, and the transducer, the back cavity having a back cavity acoustic compliance. The transducing element is dimensioned such that the transducing element length matches a predetermined resonant frequency and the transducing element width, thickness, and elasticity produces a transducer acoustic compliance within a given range of the back cavity acoustic compliance.

Apparatus and Methods for fabricating apparatus having a hermetic seal to seal a portion of an apparatus, for example and without limitation, a portion having a MEMS sensor. One such method uses crimping devices to compress a seal in a cavity formed in a housing that includes a MEMS sensor attached to a stress isolator. Under such compression, the seal deforms to hermetically seal surfaces around the inside, outside and bottom of the stress isolator.

A sensor device including: a first substrate having a bottom surface and a top surface; a second substrate having a bottom surface and a top surface, a media channel having two vertical sections and a horizontal section, wherein the two vertical sections are through the second substrate, a portion of the bottom surface of the second substrate forms a top surface of the horizontal section, and a portion of the top surface of the first substrate forms a bottom surface of the horizontal section; a sensor chip disposed on one of the two vertical sections of the media channel; and a molding compound covering side surfaces of the first substrate, the second substrate, and the sensor chip.

A MEMS chip assembly includes: a support structure having a chip mounting surface; a MEMS chip mounted on the chip mounting surface, the MEMS chip having an active surface including one or more rows of MEMS devices and a row of bond pads disposed alongside a connection edge of the MEMS chip and parallel with the rows of MEMS devices; electrical connectors connected to the bond pads; and an encapsulant material covering the electrical connectors. The MEMS chip has a plurality of trenches defined in the active surface, the trenches extending parallel with the rows of MEMS devices and disposed between the bond pads and the MEMS devices. The encapsulant material does not encroach past the trenches towards the MEMS devices.

A microphone including a casing having a front wall, a back wall, and a side wall joining the front wall to the back wall, a transducer mounted to the front wall, the transducer including a substrate and a transducing element, the transducing element having a transducer acoustic compliance dependent on the transducing element dimensions, a back cavity cooperatively defined between the back wall, the side wall, and the transducer, the back cavity having a back cavity acoustic compliance. The transducing element is dimensioned such that the transducing element length matches a predetermined resonant frequency and the transducing element width, thickness, and elasticity produces a transducer acoustic compliance within a given range of the back cavity acoustic compliance.

A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.