The application describes a package design for a MEMS transducer having an integrated circuit mounted within a chamber of the package. The integrated circuit may extend into a side wall recess of the package.

A sub-millimeter packaged microsystem includes a microsystem located in a sealed cavity defined between first and second portions of a micropackage. One or both micropackage portions can be fabricated from a metal suitable for use in a harsh environment, such as an oil well environment. The microsystem includes electronic components and can be configured to communicate with external components through a wall of the micropackage by wireless communication or by conductive feedthroughs. Pluralities of microsystems, first micropackage portions, and/or second micropackage portions are simultaneously placed during a batch assembly process. The assembly process may include micro-crimping the first and second micropackaging portions together without the need for bonding materials and related process steps.

According to an example aspect of the present invention, there is provided a package for a Microelectromechanical System, MEMS, device comprising a cap layer and the MEMS device below the cap layer, at least two electrodes on a surface of the MEMS device to enable electrical functioning of the MEMS device, wherein each electrode is located on a horizontal plane and comprises metal to enable formation of an air-path, the air-path between the cap layer and the MEMS device to enable releasing of the MEMS device, at least a part of the air-path being on the same horizontal plane wherein the at least two electrodes are located and a side access port connected to the air-path to enable releasing of the MEMS device, wherein the side access port goes through the cap layer.

A MEMS device is described. The device includes a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, a semiconductor substrate including a second bonding layer, and a cap including a third bonding layer, the cap coupled to the semiconductor substrate by bonding the second bonding layer to the third bonding layer. The first bonding layer includes silicon, the semiconductor substrate is electrically coupled to the MEMS substrate by bonding the first bonding layer to the second bonding layer, and the MEMS substrate is hermetically sealed between the cap and the semiconductor substrate.

A MEMS device is provided that includes a cap layer and a device layer. The cap layer includes a cap wafer made of electrically insulating material, and the device layer includes at least one seismic element. Moreover, the cap layer includes at least one silicon-filled portion at a first face of the cap layer facing the device layer, and at least one of said at least one silicon-filled portion includes a gap that locally increases distance from the cap layer to the at least one seismic element in the device layer.

A micro-electro-mechanical system (MEMS) package includes a wafer with an interconnect layer disposed thereon. A first device substrate including a first MEMS device and a second device substrate including a second MEMS device are laterally spaced apart from each other and disposed on the wafer. A first and a second bond seal rings are disposed below the first and the second device substrates, respectively, and both bonded to the interconnect layer. A first handle substrate includes a first cavity having a first pressure, and is bonded to the first device substrate. A second handle substrates includes a second cavity having a second pressure different from the first pressure, and is bonded to the second device substrate. A hole is disposed in the second bond seal ring for pressure adjustment in the second cavity.

A packaged integrated device includes a package substrate having a first surface and a second surface opposite the first surface, and the package substrate has a hole therethrough. The integrated device package also includes a first lid mounted on the first surface of the package substrate to define a first cavity, and a second lid mounted on the second surface of the package substrate to define a second cavity. A microelectromechanical systems (MEMS) die can be mounted on the first surface of the package substrate inside the first cavity and over the hole. A port can be formed in the first lid or the second lid.

A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide to form a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide to form a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

A sub-millimeter packaged microsystem includes a microsystem located in a sealed cavity defined between first and second portions of a micropackage. One or both micropackage portions can be fabricated from a metal suitable for use in a harsh environment, such as an oil well environment. The microsystem includes electronic components and can be configured to communicate with external components through a wall of the micropackage by wireless communication or by conductive feedthroughs. Pluralities of microsystems, first micropackage portions, and/or second micropackage portions are simultaneously placed during a batch assembly process. The assembly process may include micro-crimping the first and second micropackaging portions together without the need for bonding materials and related process steps.

Embodiments of the present disclosure include MEMS devices and methods for forming MEMS devices. An embodiment is a method for forming a microelectromechanical system (MEMS) device, the method including forming a MEMS wafer having a first cavity, the first cavity having a first pressure, and bonding a carrier wafer to a first side of the MEMS wafer, the bonding forming a second cavity, the second cavity having a second pressure, the second pressure being greater than the first pressure. The method further includes bonding a cap wafer to a second side of the MEMS wafer, the second side being opposite the first side, the bonding forming a third cavity, the third cavity having a third pressure, the third pressure being greater than the first pressure and less than the second pressure.