A thin-film package includes: a substrate; a wiring layer disposed on the substrate; a microelectromechanical systems (MEMS) element disposed on a surface of the substrate; a partition wall disposed on the substrate to surround the MEMS element, and formed of a polymer material; a cap forming a cavity with the substrate and the partition wall; and an external connection electrode connected to the wiring layer. The external connection electrode includes at least one inclined portion disposed on at least one inclined surface formed on any one or any combination of any two or more of the substrate, the partition wall, and the cap.

A MEMS package has a MEMS chip, and a package substrate which the MEMS chip is adhered. The MEMS chip has an element substrate which a movable element is formed. The MEMS package has a particle filter formed on the package substrate or the MEMS chip. The particle filter has a pierced-structure, which plural through holes are formed on a base surface by a regular arrangement. Further, in the particle filter, a plane-opening rate is set at least 45%, and a thickness-opening rate is set at least 50%.

A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.

A MEMS microphone includes a substrate having a cavity, a back plate provided over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, and spaced apart from the substrate and the back plate, a strut located at outer side of the diaphragm, having a lower surface in contact with an upper surface of the substrate and being integrally formed with the upper insulation layer to support the upper insulation layer to space the upper insulation layer from the diaphragm, and a bending prevention member provided on an upper surface of the back plate for preventing the back plate from being bent.

A packaged multichip device includes a first IC die with an isolation capacitor utilizing a top metal layer as its top plate and a lower metal layer as its bottom plate. A second IC die has a second isolation capacitor utilizing its top metal layer as its top plate and a lower metal layer as its bottom plate. A first bondwire end is coupled to one top plate and a second bondwire end is coupled to the other top plate. The second bondwire end includes a stitch bond including a wire approach angle not normal to the top plate it is bonded to and is placed so that the stitch bond's center is positioned at least 5% further from an edge of this top plate on a bondwire crossover side compared to a distance of the stitch bond's center from the side opposite the bondwire crossover side.

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

A micromechanical electrically actuable switch. The switch has a first relay with a first operating contact, and a second relay with a second operating contact. The first operating contact and the second operating contact are arranged in series in a common load path. The switch further includes a detection device for detecting a switching state of the first operating contact, and a control circuit for registering the switching state of the first operating contact and for switching on the electrically actuable switch. The control circuit is configured, upon a switch-on signal, to switch on the first relay and the second relay in a first case, in which the switching state of the first operating contact is open, and to not switch on at least the second relay in a second case, in which the switching state of the first operating contact is closed.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.