A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

The present disclosure relates generally to digital microphone and other sensor assemblies including a transducer and a delta-sigma analog-to-digital converter (ADC) with digital-to-analog converter (DAC) element mismatch shaping and more particularly to sensor assemblies and electrical circuits therefor including a dynamic element matching (DELM) entity configured to select DAC elements based on data weighted averaging (DWA) and a randomized non-negative shift.

The disclosure relates generally to microphone and vibration sensor assemblies (100) having a transducer (102), like a microelectromechanical systems (MEMS) device, and an electrical circuit (103) disposed in a housing (110) configured for integration with a host device. The electrical circuit includes a transducer bias circuit that applies a bias to the transducer and a bias control circuit (204) that compensates for transducer sensitivity drift caused by variation in an environmental condition of the transducer, and electrical circuits therefor.

An apparatus includes a polymer base layer having a surface. A die has a surface that is substantially coplanar with the surface of the polymer base layer. The die includes a fluidic actuator to control fluid flow across the surface of the die. A fluidic channel is coupled to the polymer base layer to provide a fluidic interconnect between the die and a fluidic input/output port.

A MEMS device may output a signal during operation that may include an in-phase component and a quadrature component. An external signal having a phase that corresponds to the quadrature component may be applied to the MEMS device, such that the MEMS device outputs a signal having a modified in-phase component and a modified quadrature component. A phase error for the MEMS device may be determined based on the modified in-phase component and the modified quadrature component.

A method of operating a MEMS device includes generating a MEMS drive signal, and generating and modifying the MEMS drive signal based upon a control signal to produce a modified drive signal. The method further includes generating the control signal by determining when a feedback signal from the MEMS device is at its peak value, comparing the peak value to a desired value when the feedback signal is as its peak, and generating the control signal depending upon whether the peak value is at least equal to a desired value. The modification of the MEMS drive signal based upon the control signal to produce the modified drive signal includes skipping generation of a next pulse of the modified drive signal when the control signal indicates the peak value is at least equal to the desired value.

Examples of an epitaxial-silicon wafer with a buried oxide layer are described herein. Examples of methods to manufacture an epitaxial-silicon wafer with a buried oxide layer are also described herein. In some examples, material may be removed from an epitaxial-silicon wafer at a surface opposite an epitaxial surface layer until the epitaxial-silicon wafer is a specified thickness. The thinned epitaxial-silicon wafer may be bonded to an oxidized-silicon wafer at an oxidized surface forming a buried oxide layer.

Disclosed herein is a MEMS ASIC. In some examples, the MEMS ASIC can include a MEMS, an analog front end (AFE) amplifier, an analog-to-digital converter (ADC), an overload detector, and a high-ohmic (HO) block. The HO block and the MEMS can form a high-pass filter (HPF). The impedance of the HO block can be related to the DC operating level of the AFE amplifier and the cutoff frequency of the HPF. In some examples, an overload event can occur, and the overload detector can be configured to adjust the impedance of the HO block to reduce the settling time of the MEMS ASIC. Methods of using the MEMS ASIC to reduce the settling time of the MEMS ASIC due to an overload event are disclosed herein.

A overhanging device cavity structure comprises a substrate and a cavity disposed in or on the substrate. The cavity comprises a first cavity side wall and a second cavity side wall opposing the first cavity side wall on an opposite side of the cavity from the first cavity side wall. A support extends from the first cavity side wall to the second cavity side wall and at least partially divides the cavity. A device is disposed on, for example in direct contact with, the support and extends from the support into the cavity.

An adaptive MEMS device includes a MEMS microphone and integrated circuitry, wherein the integrated circuitry is electrically connected to the MEMS microphone. The integrated circuitry reads out an output signal from the MEMS microphone and provides the output signal or a rendered output signal, via a first integrated interface, to an external processing device. Additionally, the integrated circuitry determines, at run-time, diagnostic data on the current condition of the MEMS device and provides, at run-time, the diagnostic data, via a second integrated interface, to the external processing device.