A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

There is provided a method of producing a microstructure that comprises employing a hydrogen fluoride (HF) vapour to etch a sacrificial layer of silicon dioxide (SiO.sub.2) and thereafter removing a residual layer formed when HF vapour etching the layer of silicon dioxide. The residual layer may comprise silicon, ammonium salt or carbon and various techniques are disclosed for removing such layers. These techniques may be applied concurrently, or sequentially, to the microstructure. The described methodologies therefore produce microstructures that exhibits reduced levels of residue when as compared to those techniques known in the art.

There is provided a method of producing a microstructure that comprises employing a hydrogen fluoride (HF) vapour to etch a sacrificial layer of silicon dioxide (SiO.sub.2) and thereafter removing a residual layer formed when HF vapour etching the layer of silicon dioxide. The residual layer may comprise silicon, ammonium salt or carbon and various techniques are disclosed for removing such layers. These techniques may be applied concurrently, or sequentially, to the microstructure. The described methodologies therefore produce microstructures that exhibits reduced levels of residue when as compared to those techniques known in the art.

Active surface structures comprise an exposed surface, a controlled group of MEMS (micro-electro-mechanical system) actuators, and a controlled region of the exposed surface corresponding to the controlled group. The controlled region has a first state, and a second state that is less textured than the first state. Active surface structures may be part of an apparatus that includes a controller and/or one or more sensors. The controller, sensors, and the controlled region may form a feedback loop in which the active surface structure is actively controlled.

Active surface structures comprise an exposed surface, a controlled group of MEMS (micro-electro-mechanical system) actuators, and a controlled region of the exposed surface corresponding to the controlled group. The controlled region has a first state, and a second state that is less textured than the first state. Active surface structures may be part of an apparatus that includes a controller and/or one or more sensors. The controller, sensors, and the controlled region may form a feedback loop in which the active surface structure is actively controlled.

Disclosed herein are microelectronics packages and methods for manufacturing the same. The microelectronics packages may include a photonic integrated circuit (PIC), an electrical integrated circuit (EIC), and an interconnect. The interconnect may connect the EIC to the PIC. The interconnect may include a plurality of paths between the EIC and the PIC and the individual paths of the plurality of paths are less than 100 micrometers long.

Disclosed herein are microelectronics packages and methods for manufacturing the same. The microelectronics packages may include a photonic integrated circuit (PIC), an electrical integrated circuit (EIC), and an interconnect. The interconnect may connect the EIC to the PIC. The interconnect may include a plurality of paths between the EIC and the PIC and the individual paths of the plurality of paths are less than 100 micrometers long.

A method for manufacturing a MEMS device includes disposing at least one bonding portion having a smaller bonding area in a region where an airtight chamber will be formed, and disposing a metal getter on a bonding surface of the bonding portion. According to this structure, when substrates are bonded to define the airtight chamber, the metal getter is squeezed out of the bonding position due to the larger bonding pressure of the bonding portion with a smaller bonding area. Then, the metal getter is activated to absorb the moisture in the airtight chamber. According to the above process, no additional procedure is needed to remove the moisture in the airtight chamber. A MEMS device manufactured by the above manufacturing method is also disclosed.

A method for manufacturing a MEMS device includes disposing at least one bonding portion having a smaller bonding area in a region where an airtight chamber will be formed, and disposing a metal getter on a bonding surface of the bonding portion. According to this structure, when substrates are bonded to define the airtight chamber, the metal getter is squeezed out of the bonding position due to the larger bonding pressure of the bonding portion with a smaller bonding area. Then, the metal getter is activated to absorb the moisture in the airtight chamber. According to the above process, no additional procedure is needed to remove the moisture in the airtight chamber. A MEMS device manufactured by the above manufacturing method is also disclosed.

A method is disclosed. In one example, the method includes bonding a first panel of a first material to a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel. The method further includes bonding a second panel of a second material to at least one of the base panel and the first panel, wherein multiple second cavities are formed between the second panel and the at least one of the base panel and the first panel.