B81B7/02

OPTICAL REFLECTOR ELEMENT AND OPTICAL REFLECTOR SYSTEM
20220373786 · 2022-11-24 ·

An optical reflector element includes: a pair of vibrator groups each of which includes tuning fork vibrators that are coupled together such that vibration centers of the tuning fork vibrators align on an imaginary rotational axis; a reflective body interposed between the pair of vibrator groups; a pair of supports that couple the pair of vibrator groups and the reflective body together; and a base to which the pair of vibrator groups are coupled in a manner that allows the pair of vibrator groups to vibrate.

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) VIBRATION SENSOR AND FABRICATING METHOD THEREOF
20220371881 · 2022-11-24 ·

A MEM vibration sensor includes a substrate including a first supporting-portion and a cavity and a sensing-device disposed on the substrate. The sensing-device includes a second supporting-portion correspondingly disposed over and connected with the first supporting-portion, a first sensing-unit disposed on the cavity, a first mass-block disposed on the cavity, a second sensing-unit disposed on the first sensing-unit and the first mass-block, a first metal pad disposed on the third supporting-portion and electrically coupled with the first sensing-unit, and a second metal pad disposed on the third supporting-portion and electrically coupled with the second sensing-unit.

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) VIBRATION SENSOR AND FABRICATING METHOD THEREOF
20220371881 · 2022-11-24 ·

A MEM vibration sensor includes a substrate including a first supporting-portion and a cavity and a sensing-device disposed on the substrate. The sensing-device includes a second supporting-portion correspondingly disposed over and connected with the first supporting-portion, a first sensing-unit disposed on the cavity, a first mass-block disposed on the cavity, a second sensing-unit disposed on the first sensing-unit and the first mass-block, a first metal pad disposed on the third supporting-portion and electrically coupled with the first sensing-unit, and a second metal pad disposed on the third supporting-portion and electrically coupled with the second sensing-unit.

Semiconductive structure and manufacturing method thereof

A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.

Semiconductive structure and manufacturing method thereof

A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.

Method for producing a micromechanical device having a damper structure

A method for producing a micromechanical device having a damper structure. The method includes: (A) providing a micromechanical wafer having a rear side; (B) applying a liquid damper material onto the rear side; (C) pressing a matrix against the rear side in order to form at least one damper structure in the damper material; (D) curing the damper material; and (E) removing the matrix.

Method for producing a micromechanical device having a damper structure

A method for producing a micromechanical device having a damper structure. The method includes: (A) providing a micromechanical wafer having a rear side; (B) applying a liquid damper material onto the rear side; (C) pressing a matrix against the rear side in order to form at least one damper structure in the damper material; (D) curing the damper material; and (E) removing the matrix.

MEMS optical circuit switch
11506884 · 2022-11-22 · ·

An optical circuit switch device and method for using the device are provided. The device may include a fiber array including a set of optical fibers configured for transmitting optical signals. The device may include a collimator array coupled to the fiber array configured for aligning the optical signals received from the fiber array. The device may include a first mirror array for receiving the optical signals from the collimator array. The device may include a second mirror array for receiving the optical signals from the first mirror array. The device may include a lens located at the fiber array, the lens having a focal point at the second mirror array.

MEMS optical circuit switch
11506884 · 2022-11-22 · ·

An optical circuit switch device and method for using the device are provided. The device may include a fiber array including a set of optical fibers configured for transmitting optical signals. The device may include a collimator array coupled to the fiber array configured for aligning the optical signals received from the fiber array. The device may include a first mirror array for receiving the optical signals from the collimator array. The device may include a second mirror array for receiving the optical signals from the first mirror array. The device may include a lens located at the fiber array, the lens having a focal point at the second mirror array.

Hybrid ultrasonic transducer and method of forming the same

A method of manufacturing a semiconductor device includes: forming a first substrate includes a membrane stack over a first dielectric layer, the membrane stack having a first electrode, a second electrode over the first electrode and a piezoelectric layer between the first electrode and the second electrode, a third electrode over the first dielectric layer, and a second dielectric layer over the membrane stack and the third electrode; forming a second substrate, including: a redistribution layer (RDL) over a third substrate, the RDL having a fourth electrode; and a first cavity on a surface of the RDL adjacent to the fourth electrode; forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.