Disclosed is a microelectromechanical systems (MEMS) logic gate with a first logic MEMS switch having a first beam with a first switch contact, a first gate, and a first terminal contact, wherein the first beam is coupled to a fixed higher voltage node. The MEMS logic gate also includes a second logic MEMS switch having a second beam with a second switch contact, a second gate, and a second terminal contact, wherein the second beam is electrically coupled to a fixed lower voltage node. Further included is internal logic gate circuitry having a first input terminal and a first output terminal, wherein the internal logic gate circuitry is electrically coupled between the first terminal contact of the first logic MEMS switch and the second terminal contact of the second logic MEMS switch.

The disclosed subject matter provides thin films including a metal silicide and methods for forming such films. The disclosed subject matter can provide techniques for tailoring the electronic structure of metal thin films to produce desirable properties. In example embodiments, the metal silicide can comprise a platinum silicide, such as for example, PtSi, Pt.sub.2Si, or Pt.sub.3Si. For example, the disclosed subject matter provides methods which include identifying a desired phase of a metal silicide, providing a substrate, depositing at least two film layers on the substrate which include a first layer including amorphous silicon and a second layer including metal contacting the first layer, and annealing the two film layers to form a metal silicide. Methods can be at least one of a source-limited method and a kinetically-limited method. The film layers can be deposited on the substrate using techniques known in the art including, for example, sputter depositing.

A method of mitigating self-actuation of a switch may comprise generating a tracking signal, based on an input signal that the switch is configured to convey, and combining the tracking signal with an actuating signal to generate a modified actuating signal. The actuating signal may be configured to change a state of the switch from a first state (e.g., ON) to a second state (e.g., OFF). The method further comprises selectively applying the modified actuating signal to a gate of the switch. A switch self-actuation mitigation system may comprise a first coupling device for electrically couple an AC component of a first signal to a node, where the first signal is applied a switch input. The system may further comprise a second coupling device configured to electrically couple an actuating signal to the node, and a driving device configured to selectively couple the node to a gate of the switch.

A micromechanical electrically actuable switch. The switch has a first relay with a first operating contact, and a second relay with a second operating contact. The first operating contact and the second operating contact are arranged in series in a common load path. The switch further includes a detection device for detecting a switching state of the first operating contact, and a control circuit for registering the switching state of the first operating contact and for switching on the electrically actuable switch. The control circuit is configured, upon a switch-on signal, to switch on the first relay and the second relay in a first case, in which the switching state of the first operating contact is open, and to not switch on at least the second relay in a second case, in which the switching state of the first operating contact is closed.

A microelectromechanical systems (MEMS) switching circuit and related apparatus is provided. In examples discussed herein, the MEMS switching circuit is configured to toggle (open or close) a number of MEMS switches without causing hot switching in any of the MEMS switches. More specifically, the MEMS switching circuit determines a switching sequence for toggling the MEMS switches such that each MEMS switch is only opened or closed under a very low current (e.g., <0.1 mA) or a very low voltage (e.g., <0.1 V). By operating the MEMS switches based on the determined switching sequence, it may be possible to protect the MEMS switches from hot switching damage, thus making it possible to employ the MEMS switches in an apparatus (e.g., a wireless communication device) to replace conventional switches for improved power amplifier efficiency and radio frequency (RF) performance.

A microelectromechanical device, in particular a non-volatile memory module or a relay, comprising: a mobile body including a top region and a bottom region; top electrodes facing the top region; and bottom electrodes, facing the bottom region. The mobile body is, in a resting condition, at a distance from the electrodes. The latter can be biased for generating a movement of the mobile body for causing a direct contact of the top region with the top electrodes and, in a different operating condition, a direct contact of the bottom region with the bottom electrodes. In the absence of biasing, molecular-attraction forces maintain in stable mutual contact the top region and the top electrodes or, alternatively, the bottom region and the bottom electrodes.

A microelectromechanical device, in particular a non-volatile memory module or a relay, comprising: a mobile body including a top region and a bottom region; top electrodes facing the top region; and bottom electrodes, facing the bottom region. The mobile body is, in a resting condition, at a distance from the electrodes. The latter can be biased for generating a movement of the mobile body for causing a direct contact of the top region with the top electrodes and, in a different operating condition, a direct contact of the bottom region with the bottom electrodes. In the absence of biasing, molecular-attraction forces maintain in stable mutual contact the top region and the top electrodes or, alternatively, the bottom region and the bottom electrodes.

In described examples, a cavity is formed between a substrate and a cap. One or more access holes are formed through the cap for removing portions of a sacrificial layer from within the cavity. A cover is supported by the cap, where the cover is for occulting the one or more access holes along a perspective. An encapsulant seals the cavity, where the encapsulant encapsulates the cover and the one or more access holes.

Various arrangements for a microelectromechanical (MEMS) die and a controller die in vertically stacked structures are disclosed. The orientations of the MEMS die and the controller die vary in the various arrangements. In one embodiment, a backside surface of the MEMS die is operably connected to a frontside surface of the controller die. In another embodiment, a backside surface of the MEMS die is operably connected to a backside surface of the controller die. In another embodiment, a frontside surface of the MEMS die is operably connected to a backside surface of the controller die. In yet another embodiment, a frontside surface of the MEMS die is operably connected to a frontside surface of the controller die.

A semiconductor device can include a first metal trace, a first via disposed on the first metal trace, a second metal trace disposed on the first via, and an insulator interposed between the first metal trace and the first via. The insulator can be configured to lower an energy barrier or redistribute structure defects or charge carriers, such that the first metal trace and the first via are electrically connected to each other when power is applied. The semiconductor device can further include a dummy via disposed on the first metal trace.