A semiconductor structure includes: a first device; a second device contacted with the first device, wherein a chamber is formed between the first device and the second device; a first hole disposed in the second device and defined between a first end with a first circumference and a second end with a second circumference; a second hole disposed in the second device and aligned to the first hole; and a sealing object for sealing the second hole. The first end links with the chamber, and the first circumference is different from the second circumference, the second hole is defined between the second end and a third end with a third circumference, and the second circumference and the third circumference are smaller than the first circumference.

The invention discloses a MEMS sensor detection device and a MEMS sensor system, wherein the MEMS sensor detection device comprises: a readout circuit used for analog signal processing of the output signal of the MEMS sensor to generate detection voltage; a cancellation voltage generation circuit used for generating a gravity cancellation voltage according to the detection voltage, wherein the gravity cancellation voltage and the gravity acceleration are in a positive proportional relationship; a selection circuit used for selecting the detection voltage output in a feedback phase and selecting the gravity cancellation voltage output in a gravity cancellation phase, wherein in one detection period, the feedback phase is located after the gravity cancellation phase; and a feedback circuit used for generating a feedback voltage according to the output voltage of the selection circuit, wherein the feedback voltage is in a positive proportional relationship with the output voltage of the selection circuit. The MEMS sensor detection device and the MEMS sensor system disclosed by the invention can cancel the influence of gravity acceleration and improve the sensitivity of the MEMS sensor system.

According to one embodiment, a sensor includes a first member including a first member surface, and a first element part. The first element part includes a first fixed electrode fixed to the first member surface, and a first movable electrode facing the first fixed electrode. The first fixed electrode is along the first member surface. A gap is located between the first movable electrode and the first fixed electrode. The first movable electrode includes a first surface and a second surface. The first surface is between the first fixed electrode and the second surface. At least one of the first surface or the second surface is non-parallel to the first member surface.

In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

A microelectromechanical infrared sensing device is provided, which includes a substrate, a sensing plate, a reflecting plate, a plurality of first supporting elements, a plurality of second supporting elements and a plurality of stoppers. The second supporting elements are connected to the sensing plate, such that the sensing plate is suspended above the substrate. The reflecting plate is disposed between the substrate and the sensing plate. The first supporting elements are connected to the reflecting plate, such that the reflecting plate is suspended between the substrate and the reflecting plate. When the reflecting plate moves toward the substrate and at least one of the stoppers contacts the substrate or the reflecting plate, the distance between the reflecting plate and the sensing plate increases.

A micro-electro-mechanical system (MEMS) magnetometer is provided for measuring magnetic field components along three orthogonal axes. The MEMS magnetometer includes a top cap wafer, a bottom cap wafer and a MEMS wafer having opposed top and bottom sides bonded respectively to the top and bottom cap wafers. The MEMS wafer includes a frame structure and current-carrying first, second and third magnetic field transducers. The top cap, bottom cap and MEMS wafer are electrically conductive and stacked along the third axis. The top cap wafer, bottom cap wafer and frame structure together form one or more cavities enclosing the magnetic field transducers. The MEMS magnetometer further includes first, second and third electrode assemblies, the first and second electrode assemblies being formed in the top and/or bottom cap wafers. Each electrode assembly is configured to sense an output of a respective magnetic field transducer induced by a respective magnetic field component.

A micro-electro-mechanical system (MEMS) package structure and a method for fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (200) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) and an input-output connecting member (420) are formed on a first bonding surface (100a) of the device wafer (100). The MEMS die (200) is coupled to the first bonding surface (100a) through a bonding layer (500). The MEMS die (200) includes a closed micro-cavity (220) and a second contact pad (220). The first contact pad (410) is electrically connected to a corresponding second contact pad (220). An opening (510) that exposes the input-output connecting member (420) is formed in the bonding layer (500). The MEMS package structure allows electrical interconnection between the MEMS die (200) and the device wafer (100) with a reduced package size, compared to those produced by existing integration techniques. In addition, function integration ability of the package structure is improved by integrating a plurality of MEMS dies of the same or different structures and functions on the same device wafer.

An apparatus for detecting the activity of persons or the state of infrastructures or objects influenced by persons by means of acceleration measurement. The device has an acceleration sensor which is arranged to react to a preset threshold value of a measured acceleration and, when the threshold value is exceeded, to trigger at least one of the actions of data storage, modification of a counter or transmission of a data telegram by radio. The apparatus further comprises an energy converter for converting a primary energy into electrical energy for operating the apparatus or the acceleration sensor. The energy converter is arranged to obtain the primary energy independently of an energy resulting from a measured acceleration.

A sensor element includes a piezoelectric body, a plurality of excitation electrodes, and a plurality of detecting electrodes. The piezoelectric body includes a frame and a driving arm and detecting arm which extend from the frame within a predetermined plane parallel to an xy plane in an orthogonal coordinate system xyz. The excitation electrodes are located on the driving arm. The detecting electrodes are located on the detecting arm enabling detection of a signal generated by bending deformation of the detecting arm in a z-axis direction. The detecting arm includes first and second arms. The first arm extends from the frame in the predetermined plane. The second arm extends from a front end side of the first arm toward a frame side within the predetermined plane. An end part of the second arm on the frame side is formed as a free end.

Described herein are hierarchical porous Pd@PdPt yolk-shell nanoarchitectonics and hollow PdPt nanocages hydrogen sensors, methods of producing the hydrogen sensors, and methods of using the sensors to detect H.sub.2 under ambient conditions.