A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

The described technology is generally directed towards a sensor output digitizer. The sensor output digitizer can comprise a multiplexer stage, a multi-stage analog to digital converter, and a digital output combiner. The multiplexer stage can be configured to sequentially select sensor outputs from one or more sensors, resulting in a stream of selected sensor outputs. The multi-stage analog to digital converter can be coupled with the multiplexer stage, and can be configured to convert the stream of selected sensor outputs into a stream of digitized outputs. The digital output combiner can be configured to re-scale and sum intermediate outputs of the multi-stage analog to digital converter to produce a stream of digitized sensor outputs.

A low power consumption multi-contact micro electro-mechanical strain/displacement sensor and miniature autonomous self-contained systems for recording of stress and usage history with direct output suitable for fatigue and load spectrum analysis are provided. In aerospace applications the system can assist in prediction of fatigue of a component subject to mechanical stresses as well as in harmonizing maintenance and overhauls intervals. In alternative applications, i.e. civil structures, general machinery, marine and submarine vessels, etc., the system can autonomously record strain history, strain spectrum or maximum values of the strain over a prolonged period of time using an internal power supply or a power supply combined with an energy harvesting device. The sensor is based on MEMS technology and incorporates a micro array of flexible micro or nano-size cantilevers. The system can have extremely low power consumption while maintaining precision and temperature/humidify independence.

A recess is formed in one silicon substrate. A silicon oxide film is formed in another one silicon substrate at a portion space apart from a space-to-be-formed region. The silicon oxide film has a groove surrounding the space-to-be-formed region and extending to an outer periphery of the other one silicon substrate. Further, the other one silicon substrate and the one silicon substrate are directly bonded to each other via the silicon oxide film so as to cover the groove. A gas discharge passage, a stacking structure of the silicon substrates and the silicon oxide film are formed, and the space is formed inside the stacking structure by the recess. Then, by the heat treatment, the gas inside the space is discharged to the outside of the stacking structure through the gas discharge passage.

The present invention relates to a MEMS deformation sensor for measuring a relative movement between two regions of a structure, the sensor comprising: a first portion (2) and a second portion (3) that are movable with respect to one another along a direction of measurement (X); a thrust element (4) mounted fixed with respect to the first portion; a first electrode (A) and a second electrode (B) that are capable of being raised to different electrical potentials, each mounted fixed with respect to the second portion; a connecting portion (I) forming an electrical link between the first electrode and the second electrode, the thrust element applying a load to the connecting portion when the first portion moves with respect to the second portion along the direction of measurement beyond a predetermined distance, the electrical link being broken under the effect of the load.

In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

A sensor element includes a piezoelectric body, a plurality of excitation electrodes, and a plurality of detecting electrodes. The piezoelectric body includes a frame and a driving arm and detecting arm which extend from the frame within a predetermined plane parallel to an xy plane in an orthogonal coordinate system xyz. The plurality of excitation electrodes are located on the driving arm. The plurality of detecting electrodes are located on the detecting arm in an arrangement enabling detection of a signal generated by bending deformation of the detecting arm in a z-axis direction. The detecting arm includes a first arm and second arm. The first arm extends from the frame in the predetermined plane. The second arm is connected to a front end side portion of the first arm and extend from a front end side of the first arm toward a frame side within the predetermined plane. An end part of the second arm on the frame side is formed as a free end.

An optical detector device including: a glass substrate having conductive traces plated thereon; a semiconductor device having an optical detector exposed on a side facing the glass substrate, the semiconductor device further including a plurality of bond pads electrically coupled to a first subset of the conductive traces; a metallic seal structure bonding a side of the glass substrate having the conductive traces with the side of the semiconductor device facing the glass substrate; and a plurality of conductive structures outside of a perimeter of the semiconductor device, the plurality of conductive structures being electrically coupled to a second subset of the conductive traces.

The present disclosure provides a method for processing a conductive structure. The method includes the following steps of: forming on a first surface a groove concave from the first surface towards a second surface by means of dry etching; extending the groove from the second surface to form a via through a silicon base; and processing a conductive structure within the via. The method can be applied to a silicon base having a thickness larger than 300 m. It breaks the limit on thickness that can be processed in the related art and is capable of providing electrical connectivity on both sides of a silicon base. The method is simple and highly reliable, has high processing efficiency and is applicable to mechanized production.

An apparatus for detecting the activity of persons or the state of infrastructures or objects influenced by persons by means of acceleration measurement. The device has an acceleration sensor which is arranged to react to a preset threshold value of a measured acceleration and, when the threshold value is exceeded, to trigger at least one of the actions of data storage, modification of a counter or transmission of a data telegram by radio. The apparatus further comprises an energy converter for converting a primary energy into electrical energy for operating the apparatus or the acceleration sensor. The energy converter is arranged to obtain the primary energy independently of an energy resulting from a measured acceleration.