According to one embodiment, a sensor includes a base, first and second detection element portions, first to third resistor terminals, and first and second conductive terminals. The base includes first and second base regions. The first detection element portion is provided at the first base region. The first detection element portion includes a first detection dement. The first detection dement includes a first resistance member and a first conductive member. The first resistance member includes a first resistance portion and other portion. The first conductive member includes a first conductive portion and other portion. The second detection element portion is provided at the second base region. The second detection dement portion includes a second detection element. The second detection element includes a second resistance member and a second conductive member. The second resistance member includes a second resistance portion and other portion. The second conductive member includes a second conductive portion and other portion.

A method of manufacturing a MEMS vibration element having a fixed electrode, a movable electrode, and an elastic supporting unit that elastically supports the movable electrode with respect to the fixed electrode includes: etching a base material having a first thickness to form the fixed electrode and the movable electrode; and etching the base material to form the elastic supporting unit having a second thickness, the second thickness being less than the first thickness.

Disclosed are a MEMS chip and an electronic device. The chip can include a substrate having a back cavity, as well as a back electrode and an induction membrane both disposed on the substrate, wherein the back electrode and the induction membrane are located on the back cavity and constitute a capacitor structure, the induction membrane comprises an active area opposite to the back cavity, an inactive area disposed outside the active area, and an isolation area located between the active area and the inactive area, and the isolation area comprises two insulation loops connected to the active area and the inactive area respectively, and a buffer area connected between the two insulation loops, both of the insulation loops being disposed around the active area.

A micromechanical component for a sensor device, including a substrate, at least one first counter-electrode, at least one first electrode adjustably situated on a side of the at least one first counter-electrode facing away from the substrate, and a capacitor sealing structure, which seals gas-tight an interior volume, including the at least one first counter-electrode present therein and the at least one first electrode present therein. The at least one first counter-electrode is fastened directly or indirectly to a frame structure fastened directly or indirectly to the substrate, and the frame structure framing a cavity, and the at least one first counter-electrode at least partially spanning the cavity in such a way that at least one gas is transferable between the cavity and the interior volume via at least one opening formed at and/or in the at least one first counter-electrode.

An integrated structure of a MEMS microphone and an air pressure sensor, and a fabrication method for the integrated structure, the structure including a base substrate; a vibrating membrane, back electrode, upper electrode, and lower electrode formed on the base substrate, as well as a sacrificial layer formed between the vibrating membrane and the back electrode and between the upper electrode and the lower electrode; a first integrated circuit electrically connected to the vibrating membrane and the back electrode respectively; and a second integrated circuit electrically connected to the lower electrode and the upper electrode respectively, wherein a region of the base substrate corresponding to the vibrating membrane is provided with a back cavity; the sacrificial layer between the vibrating membrane and the back electrode is hollowed out to from a vibrating space that communicates with the exterior of the integrated structure, and the sacrificial layer between the upper electrode and the lower electrode is hollowed out to form a closed space; and the integrated circuits are formed on a chip, thereby reducing the interference of connection lines on the performance of a microphone, reducing the introduction of noise, reducing the size of a product and reducing power consumption.

A force feedback actuator includes a pair of electrodes and a dielectric member. The pair of electrodes are spaced apart from one another to form a gap. The dielectric member is disposed at least partially within the gap. The dielectric member includes a first portion having a first permittivity and a second portion having a second permittivity that is different from the first permittivity. The dielectric member and the pair of electrodes are configured for movement relative to each other.

A piezoelectric actuator comprises a substrate, an insulator layer on the substrate, and a piezo actuator stack on the insulator layer. The piezo actuator stack comprises an insulator-adjacent electrode on the insulator layer. A piezo layer having a tapered sidewall resides on a portion of the insulator-adjacent electrode. An insulator-distal electrode on the piezo layer having a taper-adjacent edge offset from an intersection of the tapered sidewall of the piezo layer and the insulator-adjacent electrode.

A MEM vibration sensor includes a substrate including a first supporting-portion and a cavity and a sensing-device disposed on the substrate. The sensing-device includes a second supporting-portion correspondingly disposed over and connected with the first supporting-portion, a first sensing-unit disposed on the cavity, a first mass-block disposed on the cavity, a second sensing-unit disposed on the first sensing-unit and the first mass-block, a first metal pad disposed on the third supporting-portion and electrically coupled with the first sensing-unit, and a second metal pad disposed on the third supporting-portion and electrically coupled with the second sensing-unit.

A method of manufacturing a semiconductor device includes: forming a first substrate includes a membrane stack over a first dielectric layer, the membrane stack having a first electrode, a second electrode over the first electrode and a piezoelectric layer between the first electrode and the second electrode, a third electrode over the first dielectric layer, and a second dielectric layer over the membrane stack and the third electrode; forming a second substrate, including: a redistribution layer (RDL) over a third substrate, the RDL having a fourth electrode; and a first cavity on a surface of the RDL adjacent to the fourth electrode; forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

A micro scanning mirror, including a fixed substrate, a lens, and multiple cantilevers, are provided. Each cantilever includes a piezoelectric material structure, multiple first drive electrodes, and multiple second drive electrodes. The piezoelectric material structure includes a connecting part, a folding part, and a fixed part. The connecting part connects the lens along a direction parallel to a central axis of the lens. The folding part has a bending region and multiple drive electrode regions. The fixed part is connected to the fixed substrate, and the folding part is connected to the connecting part and the fixed part. The first drive electrodes and the second drive electrodes are respectively located in the corresponding drive electrode regions in the folding part. The micro scanning mirror of the disclosure can drive a large-sized micro mirror to rotate at an appropriate rotation angle.