Provided are a MEMS pressure sensor and a method for forming the MEMS pressure sensor. The method includes: preparing a first substrate, where the first substrate includes a first surface and a second surface opposite to the first surface; preparing a second substrate, where the second substrate includes a third surface and a fourth surface opposite to the third surface, the second substrate includes a pressure sensing region; bonding the first surface of the first substrate and the third surface of the second substrate with each other; forming a cavity between the first substrate and the pressure sensing region of the second substrate; removing the second base to form a fifth surface opposite to the third surface of the second substrate; and forming a first conductive plug passing through the second substrate from the side of the fifth surface of the second substrate to the at least one conductive layer.

A method of detecting defects in a high impedance network of a MEMs microphone sensor interface circuit. The method includes adding a high-voltage reset switch to a high-voltage high impedance network, closing the high-voltage reset switch during a start-up phase of the MEMs microphone sensor interface circuit, simultaneously closing a low-voltage reset switch of a low-voltage high impedance network during the start-up phase, simultaneously opening the high-voltage reset switch and the low-voltage reset switch at the end of the start-up phase, and detecting a defect in the high-voltage high impedance network or the low-voltage high impedance network immediately after opening the high-voltage reset switch and the low-voltage reset switch.

A micro sensor including a first substrate and a second substrate is provided. The first substrate has a surface with a cavity. The second substrate has a sensing structure. The surface of the first substrate with the cavity is bonded to the second substrate to seal the cavity, such that a pressure value in the cavity is a constant value. A manufacturing method thereof is also provided.

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure

A sensor can comprise a sensor die with a first sensor surface and a second sensor surface opposite to the first sensor surface. The sensor can further comprise a die pad component with a first pad surface and a second pad surface opposite to the first pad surface, wherein the sensor die is vertically stacked with the die pad component, with the second sensor surface oriented toward the first pad surface. The sensor can further comprise a lead frame component with a first frame surface and a second frame surface opposite to the first frame surface, the die pad component is vertically stacked with the lead frame component, wherein the second pad surface is oriented toward the first frame surface, the second pad surface is isolated from the second frame surface, and the lead frame component is electrically connected to the sensor die.

In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

A micromechanical sensor device includes: an ASIC substrate having a first front side and a first rear side; a rewiring element formed on the first front side and including multiple stacked conductor levels and insulating layers; a MEMS substrate having a second front side and a second rear side; a first micromechanical functional layer formed on top of the second front side; and a second micromechanical functional layer formed on top of the first micromechanical functional layer and connected to the rewiring element. In the second micromechanical functional layer, a movable sensor structure is anchored on one side via a first anchoring area, and an electrical connecting element formed in a second anchoring area is anchored on one side on the ASIC, and the first and second anchoring areas are elastically connected to one another via a spring element.

This application relates to an integrated circuit die (200) comprising a MEMS transducer structure (101) integrated with associated electronic circuitry (102). The electronic circuitry comprises a plurality of transistors and associated interconnections and is formed in a first area (103) of the die from a first plurality (104) of layers, e.g. formed by CMOS metal (107) and dielectric (108) layers and possibly doped areas (106) of substrate (105). The MEMS transducer structure is formed in a second area (111) of the die and is formed, at least partly, from a second plurality (112) of layers which are separate to the first plurality of layers. At least one filter circuit (201) is formed from said second plurality of layers overlying the plurality of transistors of the electronic circuitry (102). The second plurality of layers comprise at least a first metal layer (115, 117) which is patterned to form a first electrode of the MEMS transducer and at least a resistor, capacitor electrode or inductor element (203a, 203b) of the filter circuit.

A sensor has an electronic chip and a sensor chip which are arranged within a functional volume which is at the most 4-5 mm long, a maximum 2-3 mm wide, and the maximum height is 0.5-0.8 mm, thereby potentially providing a compact sensor.

A MEMS transducer package (300) comprises a package cover (313) comprising a first bonding region (316) and an integrated circuit die (319) comprising a second bonding region (314) for bonding with the first bonding region of the package cover. The integrated circuit die (309) comprises an integrated MEMS transducer (311) and integrated electronic circuitry (312) in electrical connection with the integrated MEMS transducer. The footprint of the integrated electronic circuitry (312) at least overlaps the bonding region (314) of the integrated circuit die (309).