Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

A micro electro mechanical system is provided. The micro electro mechanical system includes a first part bonded to a second part by a structural adhesive interface. The structural adhesive interface includes a conductive structural adhesive portion, and a non-conductive structural adhesive portion at least partially surrounding the conductive structural adhesive portion. The conductive structural adhesive portion and the non-conductive structural adhesive portion have a thixotropy index greater than one.

A method includes obtaining an active feature layer having a first surface bearing one or more active feature areas. A first capacitor plate of a first capacitor is formed on an interior surface of a cap. A second capacitor plate of the first capacitor is formed on an exterior surface of the cap. The first capacitor plate of the first capacitor overlays and is spaced apart from the second capacitor plate of the first capacitor along a direction that is orthogonal to the exterior surface of the cap to form the first capacitor. The cap is coupled with the first surface of the active feature layer such that the second capacitor plate of the first capacitor is in electrical communication with at least a first active feature of the active feature layer. The cap is bonded with the passive layer substrate.

This invention relates to a microelectronic device comprising: a first support, a second support, first respective faces of the first support and second support being arranged opposite, and a sealing layer between said first faces, characterized in that the sealing layer comprises at least one layer of an ionic conductive material of formula Li.sub.xP.sub.yO.sub.zN.sub.w, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device including a conductive bonding structure disposed between a substrate and a MEMS substrate. An interconnect structure overlies the substrate. The MEMS substrate overlies the interconnect structure and includes a moveable membrane. A dielectric structure is disposed between the interconnect structure and the MEMS substrate. The conductive bonding structure is sandwiched between the interconnect structure and the MEMS substrate. The conductive bonding structure is spaced laterally between sidewalls of the dielectric structure. The conductive bonding structure, the MEMS substrate, and the interconnect structure at least partially define a cavity. The moveable membrane overlies the cavity and is spaced laterally between sidewalls of the conductive bonding structure.

A MEMS device includes a lower substrate having a resonator, an upper substrate disposed to oppose an upper electrode of the resonator, a bonding layer sealing an internal space between the lower substrate and the upper substrate, and wiring layers that contain the same metal material as the bonding layer. Moreover, a rare gas content of each of the wiring layers is less than 110.sup.20 (atoms/cm.sup.3).

A piezoelectric MEMS scanning mirror system is provided. In particular, the efficiency and life of the system are improved by use of new bonding methods. Mechanical and electrical connections between the actuator frame of a piezoelectric MEMS scanning mirror system and the piezoelectric actuators in the system may be created using an anisotropic conductive adhesive. An anisotropic conductive adhesive only conducts electricity across the bond line between a lower portion of the piezoelectric actuator and a top of the metal frame. One way this is done is to provide a sparse loading of conductive particles. When the piezoelectric element is compressed against the frame, the conductive particles only form a conductive path across the bond line. Grit blasting, sanding, or chemical etching may be used to roughen the metal surface prior to bonding. A surface roughness between 2 RMS and 6 RMS may be created on the metal frame.

A method includes the following operations: forming a piezoelectric substrate including a piezoelectric structure and a conductive contact structure, in which the piezoelectric structure has a conductive layer and a piezoelectric layer in contact with the conductive layer, and the conductive contact structure is electrically connected to the piezoelectric structure and protrudes beyond a principal surface of the piezoelectric substrate; forming a semiconductor substrate having a conductive receiving feature and a semiconductor device electrically connected thereto; aligning the conductive contact structure of the piezoelectric substrate with the conductive receiving feature of the semiconductor substrate; and bonding the piezoelectric substrate with the semiconductor substrate such that the conductive contact structure is in contact with the conductive receiving feature.

Provided is: a layered body wherein a sheet surface has slight adhesiveness, enabling easy temporary securing of a semiconductor chip, or the like, that has been diced, onto a semiconductor substrate, and wherein permanent adhesion to an adhered object is expressed through post-curing; a layered body that includes the same; a semiconductor device that uses the same; and a method for manufacturing the semiconductor device. A silicone-based adhesive sheet is disclosed herein, wherein, prior to heating, the delamination mode of the adhesive surface from a non-adhesive substrate is interfacial delamination, and after heating of the adhesive surface in a range of between 50 and 200 C., the delamination mode of the adhesive surface from another non-adhesive substrate changes to cohesive fracturing, and exhibits permanent adhesion.