A micro electro mechanical system is provided. The micro electro mechanical system includes a first part bonded to a second part by a structural adhesive interface. The structural adhesive interface includes a conductive structural adhesive portion, and a non-conductive structural adhesive portion at least partially surrounding the conductive structural adhesive portion. The conductive structural adhesive portion and the non-conductive structural adhesive portion have a thixotropy index greater than one.

The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a support structure, an electronic component and an adhesive. The support structure is disposed on the substrate. The electronic component is disposed on the support structure. The adhesive is disposed between the substrate and the electronic component and covers the support structure. A hardness of the support structure is less than a hardness of the electronic component.

An example method includes providing a working stack having a first substrate layer, a second substrate layer, and a radiation-absorbing material disposed between the first and second substrate layers. The working stack includes a cavity therein having a designated liquid. A bonding interface is defined between the radiation-absorbing material and at least one of the first substrate layer or the second substrate layer. The bonding interface has a film of the designated liquid. The method also includes directing radiation onto the bonding interface to form a perimeter seal. The perimeter seal separates the cavity from an outer area of the bonding interface. The method also includes directing the radiation onto the outer area of the bonding interface to secure the first and second substrate layers together. The perimeter seal impedes an ingress of bubbles from the outer area into the cavity as the radiation is directed onto the outer area.

A method of bonding layers of dielectric materials includes providing a surface one of the layers with microscale- and/or nanoscale-size bonding elements forming contact points of the layers and bringing a layer of the layers into a mutual position according to an intended use. The method also includes illuminating the layer whose surface is provided with bonding elements by an incident electromagnetic wave, the propagation direction of which is substantially orthogonal to the one of the layers, and whose wavelength is selected depending on an absorption spectrum of a material forming the one of the layers and generating condensed optical beams within said bonding elements or close to a tip of said bonding elements intended to be in contact with the other layer. The method further includes heating and melting the bonding elements by high-intensity focal spots formed by said generated optical beams and maintaining the layers into a mutual position until and bonding of the layers.

Reversible (relatively weak) anodic bonds permit glass and silicon components to be separated without damaging the components so that they can be reused. To this end, chamfered glass with high aluminum content can be used during the original anodic bonding. Anodic bonding is terminated after complete intimate contact is achieved and while the bond is reversible. The high aluminum content impedes further bond strengthening so that the bond does not become non-reversible via contact bonding. The chamfer provides access near the glass-silicon interface for prying the glass off the silicon to effect debonding without damaging the glass or the silicon. Accordingly, the glass, the silicon, or both may be rebounded (rather than being wastefully disposed).

A method for manufacturing a bonded substrate body in which an end portion of an adhesive is located at a position retreated in a direction to the inside of the bonded substrate body from an end surface of a bonding region of a first substrate and a second substrate includes forming a film on the end portion of the adhesive.

A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

The present application discloses an anchor structure for application to a microelectromechanical system device comprising a cap layer, a device layer and a substrate layer. Such an anchor structure enhances the stress tolerance of the microelectromechanical system device. The anchor structure comprises a first anchor portion, a second anchor portion and a flexible member located in the device layer. The first anchor portion and the second anchor portion are connected to two sides of the flexible member, respectively. The first anchor is secured to the cap layer by a first bonding portion, and the second anchor is secured to the substrate layer by a second bonding portion.

A process for fabricating a symmetrical MEMS accelerometer. A pair of half parts is fabricated by, for each half part: (i) forming a plurality of resilient beams, first connecting parts, second connecting parts, and a plurality of comb structures, by etching a plurality of holes on a bottom surface of a first silicon wafer; (ii) etching a plurality of hollowed parts on a top surface of a second silicon wafer; (iii) forming a silicon dioxide layer on the top and bottom surface of the second silicon wafer; (iv) bonding the bottom surface of the first silicon wafer with the top surface of the second silicon wafer; (v) depositing a layer of silicon nitride on the bottom surface of the second silicon wafer, and removing parts of the silicon nitride layer and silicon dioxide layer on the bottom surface of the second silicon wafer; (vii) deep etching the exposed parts of the bottom surface of the second silicon wafer to the silicon dioxide layer located on the top surface of the second silicon wafer, and reducing the thickness of the first silicon wafer; and (viii) removing the silicon nitride layer, and etching the silicon dioxide to form the mass. The two half parts are then bonded along their bottom surface. The device is deep etched to form a movable accelerometer. A bottom cap is fabricated by hollowing out the corresponding area, and depositing metal as electrodes. The accelerometer is bonded with the bottom cap. Metal is deposited on the first silicon wafer to form electrodes.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.