The present invention relates to a gas sensor and a manufacturing method thereof. A sensor body of the gas sensor is formed by cutting a multi-layered ceramic/metal platform where a plurality of sequential layer structures of a ceramic dielectric material and metal are layered in a layering direction. The sensor body includes at least one layered body wherein a ceramic dielectric material, a first internal electrode, a ceramic dielectric material, and a second internal electrode are sequentially layered. The first internal electrode and the second internal electrode are exposed through a cut surface by cutting. The first internal electrode is electrically connected to a first electrode terminal disposed on a first side of the sensor body, and the second internal electrode is electrically connected to a second electrode terminal disposed on a second side of the sensor body facing the first side. The first and the second internal electrode are exposed to form a sensing surface on at least one side of the sensor body excluding a side where the first and the second electrode terminal are installed. A gas sensing material layer for gas detection is formed on a portion or an entire upper portion of the sensing surface, or a metal film whose contact resistance with the gas sensing material layer is lower than the first and the second internal electrode is formed on upper portions of the first and the second internal electrode which are exposed and a gas sensing material layer for gas detection is formed on a portion or an entire upper portion of the sensing surface where the metal film is formed.

The physical and chemical properties of surfaces can be controlled by bonding nanoparticles, microspheres, or nanotextures to the surface via inorganic precursors. Surfaces can acquire a variety of desirable properties such as antireflection, antifogging, antifrosting, UV blocking, and IR absorption, while maintaining transparency to visible light. Micro or nanomaterials can also be used as etching masks to texture a surface and control its physical and chemical properties via its micro or nanotexture.

The physical and chemical properties of surfaces can be controlled by bonding nanoparticles, microspheres, or nanotextures to the surface via inorganic precursors. Surfaces can acquire a variety of desirable properties such as antireflection, antifogging, antifrosting, UV blocking, and IR absorption, while maintaining transparency to visible light. Micro or nanomaterials can also be used as etching masks to texture a surface and control its physical and chemical properties via its micro or nanotexture.

A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer. The beam structure includes a fixed portion and a moveable portion, the fixed portion is extended vertically, and the movable portion is extended horizontally. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.

The disclosure relates to a biomimetic limb and robot using the same. The biomimetic limb includes: an arm and a biomimetic hand connected to the arm and including at least one biomimetic finger. The biomimetic finger includes a carbon nanotube layer and a vanadium dioxide layer (VO.sub.2) layer stacked with each other. Because the drastic, reversible phase transition of VO.sub.2, the biomimetic finger has giant deformation amplitude and fast response. An robot using the biomimetic limb is also provided.

Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.

The present invention relates to novel nano- and micro-electromechanical devices and novel methods of preparing them. In one aspect, the invention includes methods of preparing a nanodevice. In certain embodiments, the methods comprise coating a polymer layer with a first at least one thin solid material layer using atomic layer deposition (ALD), thus forming an ALD-generated layer. In other embodiments, the methods comprise patterning the first at least one thin solid material layer to form a nanodevice. In yet other embodiments, the methods comprise releasing the nanodevice from the polymer layer.

Techniques for fabricating horizontally aligned nanochannels are provided. In one aspect, a method of forming a device having nanochannels is provided. The method includes: providing a SOI wafer having a SOI layer on a buried insulator; forming at least one nanowire and pads in the SOI layer, wherein the nanowire is attached at opposite ends thereof to the pads, and wherein the nanowire is suspended over the buried insulator; forming a mask over the pads, the mask having a gap therein where the nanowire is exposed between the pads; forming an alternating series of metal layers and insulator layers alongside one another within the gap and surrounding the nanowire; and removing the nanowire to form at least one of the nanochannels in the alternating series of the metal layers and insulator layers. A device having nanochannels is also provided.

A nanostructured article includes a substrate; a plurality of first nanostructures disposed on, and extending away from, the substrate; and a covalently crosslinked fluorinated polymeric layer disposed on the plurality of first nanostructures. The plurality of first nanostructures includes polyurethane. The polymeric layer at least partially fills spaces between the first nanostructures to an average minimum height above the substrate of at least 30 nm such that the polymeric layer has a nanostructured surface defined by, and facing away from, the plurality of first nanostructures.

Techniques for fabricating horizontally aligned nanochannels are provided. In one aspect, a method of forming a device having nanochannels is provided. The method includes: providing a SOI wafer having a SOI layer on a buried insulator; forming at least one nanowire and pads in the SOI layer, wherein the nanowire is attached at opposite ends thereof to the pads, and wherein the nanowire is suspended over the buried insulator; forming a mask over the pads, the mask having a gap therein where the nanowire is exposed between the pads; forming an alternating series of metal layers and insulator layers alongside one another within the gap and surrounding the nanowire; and removing the nanowire to form at least one of the nanochannels in the alternating series of the metal layers and insulator layers. A device having nanochannels is also provided.