A plasma control method for an exhaust gas treating apparatus includes providing an exhaust gas treating apparatus having a plasma discharge space, a coil disposed on an outer circumference of the plasma discharge space, an upper electrode, and a lower electrode; generating plasma in the plasma discharge space; controlling the state of the plasma generated in the plasma discharge space by generating a magnetic field in the plasma discharge space between the upper electrode and the lower electrode; and cooling the reaction tube using a water cooled jacket disposed around the reaction tube. The magnetic field is generated by applying a current to the coil.

The present invention relates, in general, to the purification of boron trichloride (BCl.sub.3). More particularly, the invention relates to a process for minimizing silicon tetrachloride (SiCl.sub.4) formation in BCl.sub.3 production and/or the removal of SiCl.sub.4 in BCl.sub.3 product stream by preventing/minimizing the silicon source in the reaction chambers. In addition, a hydride material may be used to convert any SiCl.sub.4 present to SiH.sub.4 which is easier to remove. Lastly freeze separation would replace fractional distillation to remove SiCl.sub.4 from BCl.sub.3 that has been partially purified to remove light boilers.

The invention relates to a method of purifying a fluoride in a semiconductor process waste gas. The method comprises the steps of importing a mist gaseous water at a high temperature produced by heating water in a reaction chamber of a semiconductor waste gas treating tank; and dissolving the fluoride into a hydrogen fluoride by using the mist gaseous water, wherein a dissolving temperature of the mist gaseous water contacting with the fluoride is 3701300 C. This invention provides a device of purifying a fluoride in a semiconductor process waste gas. The conventional problems saying that the steps and structure of the device of purifying the fluoride in the semiconductor process waste gas are too complex and a purifying efficiency is hard to be increased.

The present invention relates to a method for inhibiting the formation of dioxin-like compounds in solid waste incineration flue gases, belonging to the field of cleaning of solid waste incineration flue gases. In accordance with the present invention, when incineration flue gases cool down to 500450 C., the flue gases are introduced into an inhibition reactor where copper chlorides in flue gas particulates mix and react with inhibitors to convert into copper metaphosphate so as to inactivate the copper chlorides which can catalyze the formation of dioxin-like compounds and control dioxin-like compound pollutants in incineration flue gases at the source. Compared with the prior art, the invention can effectively control the main formation ways of dioxin-like compounds in solid waste incineration flue gases by optimizing inhibitors and reaction conditions. The method of the invention does not affect the residual heat utilization of solid waste incineration flue gases, so solid waste incineration has a better resource utilization effect. The ammonium dihydrogen phosphate inhibitor used in the invention has the advantages of high inhibition efficiency, strong operability, low cost and environment protection, providing the technology with good application feasibility.

A device for pumping and treating gases is disclosed. The device features a stator having a plurality of pumping stages connected in series one after another between a suction side and a delivery side by the inter-stage ducts. The device also includes an inner tube and a blind outer tube, the tubes inserted one inside the other and made of ceramic material, the inner tube connected to the delivery side of the rotor housing of a pumping stage and the outer tube connected to the stator and communicating with at least one inter-stage duct formed in the stator, the tubes defining a path for the pumped gases. The device also includes a plasma source located outside the stator to generate a plasma in the path of the pumped gases.

A method and system for fumigating a material is disclosed. The method includes the steps of containing the material to be fumigated in a containment volume and forming a gas mixture in the containment volume, the gas mixture including at least a fumigation agent and an ambient gas originally present within the containment volume, wherein the partial pressure of the fumigation agent is elevated with respect to the ambient gas in the containment volume. The method further includes then maintaining a concentration of a fumigation agent within the containment volume for a required time to fumigate the material and then removing the fumigation agent from the containment volume.

Disclosed herein are an auxiliary abatement device for abating effluent gases, an abatement system including the auxiliary abatement device, and an abatement method for the abatement system. The auxiliary abatement device includes a first chamber comprising a first inlet configured to receive the effluent gases; and a second chamber configured to treat the effluent gases and comprising a second inlet configured to receive a reagent, a first outlet configured to output treated effluent gases, and a second outlet configured to output a byproduct produced by treating the effluent gases. The first chamber and the second chamber are coupled by a conduit. The abatement system includes a plasma unit and an auxiliary abatement device to partially treat the effluent gases. The abatement system utilizes a primary abatement unit disposed downstream of the plasma unit and the auxiliary abatement device to treat the effluent gases in bulk.

Implementations of the present disclosure relate to methods and systems for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a method for abating effluent exiting a processing chamber is provided. The method begins by flowing an effluent from a processing chamber into a plasma source, wherein the effluent comprises one or more F-gases. The method further includes delivering at least one abating reagent to the plasma source, the abating reagent comprising at least one of water vapor and oxygen-containing gas, at operation. The method further includes activating the effluent and the abating reagent in the presence of a plasma to convert the one or more F-gases in the effluent and the abating reagent to an abated material.

Implementations of the present disclosure relate to methods and systems for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a method for abating effluent exiting a processing chamber is provided. The method begins by flowing an effluent from a processing chamber into a plasma source, wherein the effluent comprises one or more F-gases. The method further includes delivering at least one abating reagent to the plasma source, the abating reagent comprising at least one of water vapor and oxygen-containing gas, at operation. The method further includes activating the effluent and the abating reagent in the presence of a plasma to convert the one or more F-gases in the effluent and the abating reagent to an abated material.

Systems and methods for recovery of gaseous substances from molten salt electrolysis are generally described. Certain systems comprise a cell configured for molten salt electrolysis; a collector fluidically connected to the cell and configured to collect volatilized molten salt from the cell; and a gas scrubber fluidically connected to the collector and configured to at least partially remove a gas from an effluent stream of the cell. Some methods comprise, using a pressure gradient: transporting a gas comprising molten salt vapor from an electrolytic cell to and through a collector such that at least a portion of the molten salt vapor forms a solid within the collector; and transporting some or all of the gas from the collector through a gas scrubber.