This invention relates to a Cu-BTC MOF which is water stable. The Cu-BTC MOF has open coordination sites and has been post synthesis modified by partially occupying the open sites with a ligand such as acetonitrile (CH.sub.3CN). The resultant MOF retains at least 40% of its as synthesized surface area after exposure to liquid water at 60° C. for 6 hours. This is an unexpected result versus the MOF which has not been post treated with ligands such as acetonitrile. This MOF can be used to abate contaminants such as ammonia in gas streams and especially air streams.

Disclosed is a system for treating exhaust fluid from semiconductor manufacturing equipment in which cleaning gases decomposed by a plastic apparatus alternately flow towards a front rotor region (a main rotor unit) and a rear rotor region (a subsidiary rotor unit) of a booster pump and then flow towards a dry pump, and thus uniformly react with process byproducts present throughout the whole area in a vacuum pump including the booster pump and the dry pump so as to improve removal efficiency of the process byproducts. Further, the retention time of the cleaning gases decomposed by the plasma apparatus in the vacuum pump is increased by adjusting the pressure in the pump with the rotational speed of a motor, and thus the reaction time of the cleaning gases with the process byproducts is increased, so as to further improve removal efficiency of the process byproducts, such as SiO.sub.2 powder.

A method and system for fumigating a material is disclosed. The method includes the steps of containing the material to be fumigated in a containment volume and forming a gas mixture in the containment volume, the gas mixture including at least a fumigation agent and an ambient gas originally present within the containment volume, wherein the partial pressure of the fumigation agent is elevated with respect to the ambient gas in the containment volume. The method further includes then maintaining a concentration of a fumigation agent within the containment volume for a required time to fumigate the material and then removing the fumigation agent from the containment volume.

According to an embodiment, a process apparatus performs processing on a byproduct generated in a reaction of a raw material including silicon and a halogen element or in a reaction between a raw material including silicon and a raw material including a halogen element. The apparatus includes a process liquid tank, a processing tank, a supplier and an exhauster. A process target member including the byproduct is introduced into the processing tank. The supplier supplies the process liquid from the process liquid tank to the processing tank and performs processing on the byproduct with the supplied process liquid. The exhauster exhausts a gas generated by reaction between the process liquid and the byproduct from the processing tank.

A gas filter includes a housing including a mounting portion and a main portion. The mounting portion is configured to mount the gas filter on a surface of a device. The main portion is configured to be positioned apart from the surface of the device and extends from the mounting portion in a horizontal direction. The housing has an inlet and an outlet and defines a flow channel between the inlet and the outlet. The flow channel has first and second channel portions, the first channel portion extending from the inlet to the second channel portion, the second channel portion extending in a direction substantially parallel to the horizontal direction. A filter member is positioned in the flow channel between the inlet and the outlet.

There is provided an organic iodine trapping apparatus that can efficiently trap an organic iodine without using complicated or large equipment. An organic iodine trapping apparatus 30 is an apparatus that traps an organic iodine, including: a trapping vessel 1 through which gas containing an organic iodine is passed; an organic iodine remover 2 (Example: trihexyl (tetradecyl) phosphonium chloride, or the like) that is disposed in or injected into the trapping vessel 1 and decomposes the organic iodine; and a trapping material 3 that is disposed in or injected into the trapping vessel 1 and traps iodine ions generated by decomposition of the organic iodine, in which the trapping material 3 is a metal (Example: silver or the like) or a metal compound (Example: silver chloride, silver oxide, or the like).

Provided are a method for treating sulfur hexafluoride and an apparatus for collecting and treating by-products. The method for treating sulfur hexafluoride, and the apparatus for collecting and treating by-products according to the present invention are a significantly effective method and apparatus capable of safely treating sulfur hexafluoride at low cost.

Disclosed is a system for integrally treating a composite waste gas including nitrogen oxides (NO.sub.x and N.sub.2O), chlorofluorocarbons (CFCs), hydrochlorofluorocarbons (HCFCs), hydrofluorocarbons (HFCs), and perfluorinated compounds (PFCs). The system includes a first wet processor configured to wash and adsorb dust including gases, SO.sub.x, and ash dissolved in water, a decomposing reactor configured to receive waste gas processed in the first wet processor and process nitrogen oxides (NO.sub.x and N.sub.2O), fluorocarbons (CFCs), hydrochlorofluorocarbons (HCFCs), hydrofluorocarbons (HFCs), and perfluorinated compounds (PFCs) in the waste gas, and a second wet processor configured to receive the waste gas processed in the decomposing reactor and wash and adsorb the received waste gas. The system can efficiently treat a large amount of composite waste gas.

A piping apparatus includes an exhaust pipe providing a passage through which the exhaust gas discharged, and a harmful gas treatment device positioned between a rear end of the vacuum pump and a front end of the exhaust pipe or positioned on the exhaust pipe, wherein the harmful gas treatment device includes a heating means for increasing the temperature of the exhaust gas so as to prevent a sublimable component, from among components included in the exhaust gas, from being sublimated and accumulated inside the exhaust pipe, and the heating means is positioned on a section including a sublimation condition occurrence point, at which a sublimation condition of the sublimable component occurs, and an upstream side of the sublimation condition occurrence point on the exhaust pipe, and the sublimation condition is a temperature condition for the pressure of the sublimable component.

Provided is a gas adsorption sheet for a secondary battery, which contains gas adsorbent particles excellent in gas adsorption property, and allows the gas adsorption performance of the gas adsorbent particles to be sufficiently exhibited. According to one embodiment of the present invention, there is provided a gas adsorption sheet for a secondary battery, including: a heat-resistant base material; and a gas adsorption layer arranged on at least one surface of the heat-resistant base material, wherein the gas adsorption layer contains: a binder resin; and gas adsorbent particles each of which is formed of an inorganic porous material having pores, and is capable of adsorbing a gas.