A manufacturing apparatus according to an embodiment is a manufacturing apparatus of a semiconductor device or a liquid crystal device including a process chamber discharging exhaust gas, a waste liquid discharger discharging waste liquid including a part of the exhaust gas, a first pipe provided between the process chamber and the waste liquid discharger, having a first opening area in a cross section in a direction perpendicular to a moving direction of the exhaust gas, a second pipe provided between the first pipe and the waste liquid discharger, having a second opening area smaller than the first opening area in a cross section in the direction perpendicular to the moving direction of the exhaust gas, and a third pipe connected to the first pipe, the third pipe supplying a condensing agent having a normal boiling point of equal to or higher than 25 C. to the first pipe.

An object of the present invention is to provide a deuterium recovery method and deuterium recovery equipment that can recover and reuse deuterium or deuterium compounds used in semiconductor manufacturing processes. The present invention provides a deuterium recovery method including: generating heavy water in an exhaust gas containing deuterium gas in a semiconductor manufacturing process.

The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

An exhaust gas abatement system includes an exhaust gas abatement section configured to abate exhaust gases by utilizing thermal energy and to cool the abated gases by using a liquid, a circulating section configured to circulate the liquid within a circulation path as a circulating liquid, a heat exchange tube configured to cool the circulating liquid and to executes a heat exchange between a cooling liquid which flows in an interior of the heat exchange tube and the circulating liquid which flows outside the heat exchange tube, and a circulating liquid storage portion configured to store the circulating liquid. The heat exchange tube is disposed in a heat exchange tube installation space which is in at least part of an interior of the circulating liquid storage portion.

A method of obtaining helium from a process gas. The process gas is at a pressure less than 15 bar to a first membrane separation stage having a first membrane more readily permeable for helium than for at least one other component in the process gas. A first retentate stream is fed to a second membrane separation stage having a second membrane more readily permeable for helium than for at least one other component in the process gas. Helium is separated from a first helium-containing permeate stream using a pressure swing adsorption to obtain a helium-containing product stream. A second helium-containing permeate stream is recycled to the first membrane separation stage. A purge gas from the pressure swing adsorption is also recycled to the first membrane separation stage.

An air intake system for directing intake air to an internal combustion engine of a machine is disclosed. The air intake system may comprise an air compressor configured to increase a pressure of the intake air, and a membrane unit downstream of the air compressor and having a membrane with selectivity for siloxanes. The membrane may have a first side and a second side, and the first side may be exposed to a higher pressure than the second side when the air compressor is operating. The membrane may be configured to separate the intake air into a permeate that traverses the membrane from the first side to the second side, and a retenate that remains on the first side. The permeate may have a higher siloxane content than the retenate. The retenate may be directed to the internal combustion engine for combustion.

A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH.sub.4, H.sub.2O, H.sub.2, NF.sub.3, SF.sub.6, F.sub.2, HCl, HF, Cl.sub.2, and HBr. Representative condensing abating reagents include, for example, H.sub.2, H.sub.2O, O.sub.2, N.sub.2, O.sub.3, CO, CO.sub.2, NH.sub.3, N.sub.2O, CH.sub.4, and combinations thereof.

Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

Organosilicon compounds in a process exhaust stream from silicone production are removed by contacting the exhaust stream with a semipermeable silicone membrane which is selectively permeable to organosilicon compounds and oxygen relative to nitrogen. The pressure on the permeate side of the membrane is preferably less than the pressure on the retentate side.

The invention relates to a method for preparing a solid comprising the mixture of a set of compounds comprising at least one Cu.sub.2(OH).sub.2CO.sub.3 powder, one metal oxide powder selected from the group of metals consisting of copper, zinc, iron, manganese and mixtures thereof, and at least one binder as well as the use of the solid prepared by means of this method.