Patent classifications
B01D2257/553
Abatement device
Provided is an abatement device that reduces an amount of drainage of circulating water. The abatement device lowers an average drainage flow of circulating water to a low flow, when a ratio of a concentration of silicon dioxide within the circulating water and a concentration of hydrogen fluoride within the circulating water is greater than or equal to a predetermined value at which hydrofluorosilicic acid can be produced, and raises the average drainage flow of the circulating water to a high flow higher than the low flow, when the ratio of the concentration of silicon dioxide within the circulating water and the concentration of hydrogen fluoride within the circulating water is less than the predetermined value.
Apparatus for exhaust gas abatement under reduced pressure
An apparatus for exhaust gas abatement under reduced pressure includes a reaction tube having, in an interior thereof, an exhaust gas treatment space in which an exhaust gas supplied from an exhaust gas source via a vacuum pump is heated by an electric heater or excited by a plasma for decomposition and/or reaction treatment. The apparatus also includes a downstream vacuum pump connected to an exhaust gas outlet located downstream of the reaction tube to reduce a pressure in a region located downstream of an outlet of the vacuum pump and including the interior of the reaction tube. The downstream vacuum pump is a water-sealed pump. The apparatus further includes a water-washing unit for washing a downstream end of an exhaust gas flow path in the reaction tube with washing water. The washing water supplied by the water-washing unit is reused as seal water for the downstream vacuum pump.
Hydrogen gas recovery system and hydrogen gas separation and recovery method
A hydrogen gas recovery system according to the present ingestion is configured by a condensation and separation apparatus (A) that condenses and separates chlorosilanes from a hydrogen-containing reaction exhaust gas exhausted from a polycrystalline silicon production step, a compression apparatus (B) that compresses the hydrogen-containing reaction exhaust gas, an absorption apparatus (C) that absorbs and separates hydrogen chloride by contacting the hydrogen-containing reaction exhaust gas with an absorption liquid, a first adsorption apparatus (D) comprising an adsorption column filled with activated carbon for adsorbing and removing methane, hydrogen chloride, and part of the chlorosilanes each contained in the hydrogen-containing reaction exhaust gas, a second adsorption apparatus (E) comprising an adsorption column filled with synthetic zeolite that adsorbs and removes methane contained in the hydrogen-containing reaction exhaust gas, and a gas line (F) that recovers a purified hydrogen gas having a reduced concentration of methane.
Continuous process for cleaning process waste air obtained in the production of silicones
Organosilicon compounds in a process exhaust stream from silicone production are removed by contacting the exhaust stream with a semipermeable silicone membrane which is selectively permeable to organosilicon compounds and oxygen relative to nitrogen. The pressure on the permeate side of the membrane is preferably less than the pressure on the retentate side.
Inlet assembly
An inlet assembly for a an abatement burner includes: an inlet conduit operable to convey an effluent gas stream to be treated from an inlet aperture via a bore to an outlet aperture for treatment; and a lance conduit operable to convey a fuel gas from a gas inlet aperture via a gas bore to a gas outlet aperture positioned within the bore for mixing with the effluent gas stream, a cross-sectional area of the gas bore increasing towards the gas outlet aperture. In this way, the expansion caused by the increasing cross-sectional area of the gas bore enhances the mixing of the fuel gas with the effluent gas stream which provides for improved destruction and removal efficiencies (DRE), which enables the inlet assembly to be operated with reduced quantities of fuel gas, while still maintaining required levels of DRE.
METHOD FOR EXHAUST GAS ABATEMENT UNDER REDUCED PRESSURE AND APPARATUS THEREFOR
The present invention provides an energy-efficient method and apparatus that can achieve exhaust gas abatement with a minimum use of diluent nitrogen gas. More specifically, the present invention is directed to a method and apparatus for exhaust gas abatement under reduced pressure, in which an exhaust gas supplied from an exhaust gas source via a vacuum pump is decomposed by heat of a high-temperature plasma under a reduced pressure.
METHOD AND APPARATUS FOR EXHAUST GAS ABATEMENT UNDER REDUCED PRESSURE
The present invention provides an energy-efficient method and apparatus that can achieve exhaust gas abatement with a minimum use of diluent nitrogen gas. More specifically, the present invention is directed to a method and apparatus for exhaust gas abatement under reduced pressure, in which an exhaust gas supplied from an exhaust gas source through a vacuum pump is decomposed by combustion heat of a flame under a reduced pressure.
METHOD FOR CAPTURING SILICON AT LOW HOURLY SPACE VELOCITY
The present invention relates to a process for trapping silicon compounds in a gaseous or liquid feedstock, comprising bringing the feedstock into contact with a trapping mass with a liquid hourly space velocity LHSV of less than 5 h.sup.1 or a gas hourly space velocity GHSV of less than 500 h.sup.1.
PROCESS STOP LOSS REDUCTION SYSTEM THROUGH RAPID REPLACEMENT OF APPARATUS FOR TRAPPING OF REACTION BY-PRODUCT FOR SEMICONDUCTOR PROCESS
Disclosed is a process stop loss reduction system, in which in case that pressure in a trapping apparatus and pressure in a process chamber are increased because of space clogging or the like caused by reaction by-products while the trapping apparatus for trapping of a reaction by-product contained in exhaust gas discharged from the process chamber operates over a long period of time during a semiconductor process, only the trapping apparatus, to which a supply of exhaust gas is cut off, may be quickly replaced while inert gas is received in an idle state and continuously supplied to a vacuum pump through a bypass pipe of the trapping apparatus without stopping an operation of (shutting down) a semiconductor manufacturing process chamber facility, and then the trapping apparatus may be supplied with the exhaust gas again.
Gas management system
A gas chamber supply system includes a gas source configured to fluidly connect to a gas chamber and to supply a gas mixture to the gas chamber, the gas source including: a pre-prepared gas supply including a gas mixture, the gas mixture including a plurality of gas components and lacking a halogen; a recycled gas supply including the gas mixture; and a fluid flow switch connected to the pre-prepared gas supply and to the recycled gas supply. The gas chamber supply also includes a control system configured to: determine if the relative concentration between the gas components within the recycled gas supply is within an acceptable range; and provide a signal to the fluid flow switch to thereby select one of the pre-prepared gas supply and the recycled gas supply to as the gas source based on the determination.