A reheating collection device for a gas phase process is provided with a container elongated in an axial direction along an axis to define a chamber, an inflow path and an exhaust path respectively in communication with the chamber and apart in the axial direction from each other, and a heater heating the chamber between the inflow path and the exhaust path.

A method for the destruction of a target gas, the method including: a) compressing at a first pressure a mixture of air and target gas to produce a compressed target gas mixture; b) destroying the target gas by combusting the compressed target gas mixture with diesel fuel in a forced-induction internal combustion engine, at a combustion pressure greater than the first pressure in the turbocharger, to produce an oxidised exhaust gas, the combustion occurring while maintaining a load on the diesel engine with a load bank; and c) processing the oxidised exhaust gas to produce a vent gas for venting to atmosphere where the vent gas includes substantially no target gas.

Copper adsorbents which are resistant to the reduction by the components of the synthesis gas at normal operation conditions. The adsorbents are produced by admixing small amounts of an inorganic halide, such as NaCl, to the basic copper carbonate precursor followed by calcination at a temperature sufficient to decompose the carbonate. The introduction of the halide can be also achieved during the forming stage of adsorbent preparation. These reduction resistant copper oxides can be in the form of composites with alumina and are especially useful for purification of synthesis gas and the removal of mercury, arsine, phosphine, as well as hydrogen sulfide.

A process for combined removal of siloxanes and sulfur-containing compounds from biogas streams, such as streams from landfills or anaerobic digesters, comprises heating the biogas stream and optionally mixing it with air, feeding the gas to a first filter unit with high temperature resistance, injecting a dry sorbent into the first filter unit to capture siloxanes present in the gas, recycling part of the exit gas from the first filter unit to the inlet thereof for the sulfur-containing compounds to be captured by the dry sorbent or optionally to a second filter unit inlet for the sulfur-containing compounds to be captured by a sulfur-specific sorbent and recovering clean gas from the first or optionally from the second filter unit.

Embodiments disclosed herein include an abatement system and method for abating compounds produced in semiconductor processes. The abatement system includes a remote plasma source for generating an oxidizing plasma for treating exhaust gases from a deposition process performed in the processing chamber, the treatment assisting with the trapping particles in an exhaust cooling apparatus. The remote plasma source then generates a cleaning plasma for treating exhaust gases from a cleaning process performed in the processing chamber, the cleaning plasma reacting with the trapped particles in the exhaust cooling apparatus and cleaning the exhaust cooling apparatus.

This present disclosure relates to processes for removing contaminants from hydrocarbon streams, e.g. removing chlorides, CO.sub.2, COS, H.sub.2S, AsH.sub.3, methanol, mercaptans and other S- or O-containing organic compounds from olefins, paraffins, aromatics, naphthenes and other hydrocarbon streams. The process involves contacting the stream with an adsorbent which comprises a zeolite, an alumina component and a metal component e.g. sodium, in an amount at least 30% of the zeolite's ion exchange capacity.

A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH.sub.4, H.sub.2O, H.sub.2, NF.sub.3, SF.sub.6, F.sub.2, HCl, HF, Cl.sub.2, and HBr. Representative condensing abating reagents include, for example, H.sub.2, H.sub.2O, O.sub.2, N.sub.2, O.sub.3, CO, CO.sub.2, NH.sub.3, N.sub.2O, CH.sub.4, and combinations thereof.

A membrane process is provided for separating light olefins from light paraffins to produce a polymer grade light olefin product stream that is about 99.5 mol % ethylene or propylene. The process involves multiple stages to achieve the high purity product and provides for processing hydrocarbon streams that have differing concentrations of light olefins.

A hydrogen fluoride gas removal device includes: a hydrogen fluoride gas removal treatment machine that is configured to perform a treatment of removing the hydrogen fluoride gas from the mixed gas by bringing the mixed gas into contact with a removal agent for removing the hydrogen fluoride gas from the mixed gas; a removal agent supply machine that is configured to supply the removal agent to the hydrogen fluoride gas removal treatment machine; a removal agent moving machine that is configured to move the removal agent, which is accommodated in the hydrogen fluoride gas removal treatment machine, within the hydrogen fluoride gas removal treatment machine; and a removal agent discharge machine that is configured to discharge the used removal agent from the hydrogen fluoride gas removal treatment machine.

Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%. The present invention solves the technical difficulty the normal-pressure waste hydrogen recovered in the manufacturing process of semiconductor can't be returned to the manufacturing process of semiconductor for reuse.