A heated inlet tube for use in a wet scrubber is disclosed. In one embodiment, the heated inlet tube comprises a heated tube concentric to the inlet tube to which a heated gas is applied thereby maintaining temperature of a waste gas stream as it flows through the inlet tube. In a further embodiment, an insulating tube concentrically surrounds the heated tube to further maintain the temperature of the waste gas stream.

A substrate processing apparatus includes a processing chamber configured to process a substrate, and a filtration part containing a porous coordination polymer and provided in an exhaust path configured to exhaust a gas from the processing chamber.

Electronic device processing assemblies including an equipment front end module (EFEM) with at least one side storage pod attached thereto are described. The side storage pod has a side storage container. In some embodiments, an exhaust conduit extends between the chamber and a pod plenum that can contain a chemical filter proximate thereto. A supplemental fan may draw purge gas from the pod plenum through the chemical filter and route the gas through a return duct to an upper plenum of the EFEM. Methods and side storage pods in accordance with these and other embodiments are also disclosed.

Described are composite adsorption media that contain two or more different types of adsorbent material in binder, that may preferably be prepared by additive manufacturing techniques, as well as methods of preparing the structures by additive manufacturing methods.

A device and method of simultaneously removing flammable gases and nitrous oxide are provided. The device includes a thermal oxidation chamber, a high-temperature resistant dust filter, and a catalyst chamber. The thermal oxidation chamber is configured to receive an exhaust gas from a process tool. The exhaust gas includes flammable gases and nitrous oxide. The thermal oxidation chamber has a first exhaust pipe to emit nitrous oxide and dust generated after the exhaust gas is thermally oxidized. The high-temperature resistant dust filter receives dust and nitrous oxide from the first exhaust pipe, wherein the high-temperature resistant dust filter has a filter fiber net and a second exhaust pipe, and the second exhaust pipe is configured to emit nitrous oxide. The catalyst chamber receives nitrous oxide from the second exhaust pipe, wherein the catalyst chamber has a nitrous oxide decomposition catalyst to decompose nitrous oxide into nitrogen and oxygen.

An apparatus for treating gaseous pollutants includes a gas inlet part, a first treatment unit, a second treatment unit and a non-mechanical flow-guiding device. The gas inlet part includes a gas inlet chamber and at least one guide pipe. The guide pipe communicates with the gas inlet chamber and guides an effluent stream from a semiconductor process to the gas inlet chamber. The first treatment unit is coupled to a bottom end of the gas inlet part and is configured to abate the effluent stream. The non-mechanical flow-guiding device is coupled to the first treatment unit. The flow-guiding device is configured to guide the effluent stream to move toward an opening. The second treatment unit is coupled to the flow-guiding device via the opening, receives the effluent stream from the first treatment unit and further abates the effluent stream.

Apparatus and methods are disclosed. The apparatus comprises: an abatement chamber of an abatement apparatus which treats an effluent stream from a semiconductor processing tool to provide a combusted effluent stream having effluent particles; and a first atomiser located downstream of the abatement chamber, the first atomiser being configured to produce droplets having a droplet size based on a particle size of the effluent particles to be removed from the combusted effluent stream. In this way, the atomizer may produce droplets which combine with or adhere to the effluent particles which assists in the removal of the effluent particles from the combusted effluent stream.

An integrated waste gas treatment system includes an adsorption/desorption device that receives a waste gas that includes an organic compound and an organic nitrogen compound exhausted from a semiconductor manufacturing facility, where the adsorption/desorption device adsorbs the organic compound and the organic nitrogen compound and concentrates and desorbs the organic compound and the organic nitrogen compound, and a catalytic decomposition device disposed adjacent to the adsorption/desorption device, where the catalytic decomposition device includes a catalytic chamber that provides a gas passage through which a gas desorbed from the adsorption/desorption device flows and an oxidation-reduction catalyst disposed in the gas passage that removes the organic compound and the organic nitrogen compound from the desorbed gas. The organic compound and the organic nitrogen compound are subjected to an oxidation treatment by the oxidation-reduction catalyst, and nitrogen oxides generated by the oxidation treatment are removed by a selective reduction reaction.

An apparatus for trapping an exhaust material from a substrate-processing process includes: a cyclone configured to provide the exhaust material with a swirling flow, wherein the exhaust material is discharged from the substrate-processing process using a reaction gas; an atomization module for providing the cyclone with a mist to convert the exhaust material into a powder through a wet oxidation reaction, and a collector configured to collect the powder.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.