A system for treating moisture in exhaust gas uses a cooling trap to remove the moisture contained in the exhaust gas. The system includes a tank that stores, as liquid water, the moisture flown out of the cooling trap and a water level measurement means that measures a water level in the tank. A pipe is connected to a drainage port for draining the water stored in the tank to outside and a valve is disposed in the pipe. Aa valve control means opens the valve to start drainage when the water level in the tank measured by the water level measurement means exceeds a first water level and closes the valve to stop the drainage when a second water level set lower than the first water level is reached. The second water level is provided at a position higher than the drainage port.

The present disclosure provides an apparatus for trapping of a reaction by-product having a self regenerating function for a used inner collecting tower, and an object of the present disclosure is to provide the reaction by-product trapping apparatus configured such that the trapping apparatus positioned between a process chamber and a vacuum pump or between the vacuum pump and a scrubber stops operating during a semiconductor manufacturing process when a trapping reaction of trapping a reaction by-product reaches a saturated state during a trapping operation, and the trapping apparatus removes the reaction by-product produced in an inner collecting tower through a heating reaction, such that the inner collecting tower is regenerated to enable an additional trapping reaction to be performed.

A ruthenium oxide gas absorbent liquid includes an organic alkali solution containing a ligand and/or an onium salt composed of an onium ion and an anion, at least part of which is a hydroxide ion, wherein the hydroxide ion has a concentration ranging from more than 1×10.sup.−7 mol/L to 6 mol/L or less.

A liquid filter apparatus for gas/solid separation includes a housing with a filter chamber, a semiconductor process gas inlet, and a process gas outlet. The filter chamber forms a liquid reservoir, and the semiconductor process gas inlet and the process gas outlet are in communication with the filter chamber. The housing further includes a filter liquid inlet and a filter liquid outlet, which are in communication with the liquid reservoir for delivering and removing filter fluid, respectively, to and from the liquid reservoir.

An abatement apparatus capable of treating exhaust gas with less wet treatment devices than a conventional abatement apparatus is disclosed. The abatement apparatus includes: a pre-wet treatment device; a combustion treatment device; gas introduction lines coupled to process chambers of a film forming device; first flow-path switching devices coupled to the plurality of gas it lines, respectively; a first gas delivery line extending from the first flow-path switching devices to the pre-wet treatment device; a second gas delivery line extending from the first flow-path switching devices to the combustion treatment device; and an operation controller configured to control operations of the first flow-path switching devices to deliver the process gas to the pre-wet treatment device and deliver the cleaning gas to the combustion treatment device.

The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

A process gas suction structure for preventing a generation of products from a process gas due to a temperature drop is disclosed. The process gas suction structure includes a double tube structure, and a heating device configured to heat the double tube structure. The double tube structure includes a process-gas flow passage portion where the process gas flows, and a partition portion arranged outside of the process-gas flow passage portion.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Provided is a solvent separation method and a solvent separation apparatus that make it possible to efficiently retrieve the thermal energy possessed by an exhaust atmosphere released in a solvent-removal step to suppress reductions in a temperature of the exhaust atmosphere. In the solvent separation method and the solvent separation apparatus, a vaporized solvent is removed from a gas while heat-exchange between the gas within a condensation part and the gas within a dust-collection part is conducted by using a heat exchange part that is placed between the condensation part that introduces the gas into a first direction and the dust-collection part that introduce the gas into a second direction opposite to the first direction the gas discharged from a downstream side of the condensation part.

Method of treating gas and gas treatment device, the gas treatment device comprising: a first chamber, comprising a first inlet, a first outlet and a first energy supply system, allowing the gas to enter the first chamber through the first inlet; a second chamber comprising a second outlet and a second energy supply system; a third chamber comprising a third inlet in communication with the first outlet and the second outlet; and a fourth chamber comprising a fourth inlet and a scrubbing system containing a solvent comprising water molecules (H.sub.2O), wherein the third outlet of the third chamber is in communication with the fourth inlet of the fourth chamber.