Described are three-dimensional structures that contain metal-organic-framework adsorbent material and that are prepared by additive manufacturing techniques, as well as methods of preparing the structures by additive manufacturing methods.

A gas treating apparatus may include a reaction chamber configured to process a gas supplied from an outside by a plasma, the processed gas containing a nitrogen oxide, and a nitrogen oxide reduction apparatus connected to the reaction chamber. The nitrogen oxide reduction apparatus includes a cooling unit configured to cool the processed gas to a temperature lower than a nitrogen oxide generation temperature.

The present disclosure includes a system for processing waste from a chemical vapor deposition process. The system can include an inlet configured to be connected to one or more chemical vapor deposition systems, the inlet configured for receiving an effluent comprising one or more waste gases, a vacuum component in fluid communication with the inlet, the vacuum component configured for maintaining a vacuum of about 0.5 Torr to about 3.5 Torr and actuatable for removing the one or more waste gases from the one or more chemical vapor deposition systems, and a fluid line fluidly connecting the inlet to the vacuum component; and a controller in communication with the vacuum component.

Method and apparatus for condensing a majority of the solvent in a process gas stream at low temperatures, e.g., below the freezing point of water, ca. −5° C. The gas stream exiting the condenser step may be further processed in one or more emission control devices, such as a single or multi-step series of concentrator devices, such as zeolite concentrator devices. One or more emission control operations can be carried out downstream of the single or multi-step concentrators. The aforementioned condensing process enables the one or more concentrators to operate in a favorable temperature range for removal of 99% or more of VOC, thereby meeting or exceeding strict environmental regulations.

A detoxifying device 100 having an inner wall 104 that forms a flow passage 103 through which treatment gas flows includes a first piping 130 that forms a part of the flow passage 103, a replaceable piping section 170 that forms a part of the flow passage 103 at the position downstream of the first piping 130, and is connected thereto for sprinkling the cleaning water to remove the solid product adhering to the inner wall 104, and a second piping 150 that forms a part of the flow passage 103 at the position downstream of the piping section 170, and is connected thereto.

Methods of filtering a feed comprising a liquid or a gas for or during the production of electronics, nanosystems or ultrapure water include filtering said feed using at least one filter assembly, wherein said at least one filter assembly includes at least one isoporous block copolymer filtration membrane.

The present invention can separate waste gases according to whether they are corrosive or non-corrosive to perform pyrolysis treatment thereof individually, wherein powder fixed to a heating module and a chamber is removed to increase operation efficiency and equipment durability, and the collected powder can be externally discharged even during operation.

An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.

Disclosed is a gas collection apparatus used in manufacturing a semiconductor. The apparatus includes: a housing having a chamber formed therein; a heating member installed in the housing to heat cobalt-carbon gas introduced into the chamber; a cobalt deposition member installed across the chamber of the housing to deposit cobalt composite; and a cooling member that induces carbon composite to be solidified and deposited while rapidly cooling the carbon composite.

An exhaust gas processing system including a process chamber in which an exhaust gas is produced; an exhaust gas measurer receiving the exhaust gas and measuring a concentration of the exhaust gas; a solid producing gas processor receiving the exhaust gas and removing a solid producing gas contained in the exhaust gas; a gas supply supplying dilution and cooling gases to the solid producing gas processor; a processed gas measurer receiving, as a processed gas, the exhaust gas free of the solid producing gas and measuring a temperature of the processed gas and ingredients of the processed gas; and a controller receiving results of measurement of the concentration of the exhaust gas from the exhaust gas measurer and results of measurement of the temperature of the processed gas and the ingredients of the processed gas from the exhaust gas measurer and controlling the gas supply based on the measurement results.