Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O.sub.2, N.sub.2O, or O.sub.3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted. Therefore, the ligand and the source gas of which the ligand has been decomposed may not react with the reactant gas or heat which occurs in the exhaust pump, and thus, the ligand-decomposed source gas and the ligand flowing into the exhaust pump are not deposited on an inner surface of the exhaust pump. Also, the ligand-decomposed source gas and ligands piled in the exhaust pump are not exploded.

Embodiments disclosed herein include a particle collection trap for an abatement system for abating compounds produced in semiconductor processes. The particle collection trap includes a device for producing spiral gas flow in the particle collection trap. The spiral gas flow causes particles, which are heavier than the gas, to travel to the outside diameter of the flow path where the gas velocity is slower and to drop out of the gas stream. The device may be a spiral member coupled to a hollow tube or a rolled member having an inner portion coupled to a hollow tube. The particle collection trap increases the accumulation rate of particles in the gas stream without reducing the velocity of the gas flow.

A process gas suction structure for preventing a generation of products from a process gas due to a temperature drop is disclosed. The process gas suction structure includes a double tube structure, and a heating device configured to heat the double tube structure. The double tube structure includes a process-gas flow passage portion where the process gas flows, and a partition portion arranged outside of the process-gas flow passage portion.

Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%. The present invention solves the technical difficulty the normal-pressure waste hydrogen recovered in the manufacturing process of semiconductor can't be returned to the manufacturing process of semiconductor for reuse.

Provided is an exhaust gas treatment apparatus that treats exhaust gas generated from semiconductor process and directed to a vacuum pump. Exhaust gas treatment apparatus includes a plasma generating unit for generating plasma, a reaction chamber in which perfluoride is decomposed by the plasma to generate a decomposition gas, and gas supplying unit for supplying the decomposition gas from the reaction chamber to a processing chamber in which the exhaust gas from the semiconductor process is introduced and treated exhaust gas is discharged to the vacuum pump. Decomposition gas reacts with the exhaust gas in the processing chamber to suppress generation of salt in solid state by a component of the exhaust gas.

Methods and apparatus to thermally destruct volatile organic compounds are disclosed. An example thermal oxidizer for a furnace includes: an oxidation chamber comprising an inlet configured to receive exhaust gases from a furnace and an outlet configured to output resultant gases; and a plurality of heating elements within the oxidation chamber configured to heat the exhaust gases to oxidize one or more components of the exhaust gases between the inlet and the outlet to result in the resultant gases, the plurality of heating elements comprising resistive heating elements forming coils having respective axes, the plurality of heating elements being oriented within the oxidation chamber such that the axes of the coils are transverse to an exhaust gas flow direction from the inlet to the outlet of the oxidation chamber.

An exhaust gas processing system including a process chamber in which an exhaust gas is produced; an exhaust gas measurer receiving the exhaust gas and measuring a concentration of the exhaust gas; a solid producing gas processor receiving the exhaust gas and removing a solid producing gas contained in the exhaust gas; a gas supply supplying dilution and cooling gases to the solid producing gas processor; a processed gas measurer receiving, as a processed gas, the exhaust gas free of the solid producing gas and measuring a temperature of the processed gas and ingredients of the processed gas; and a controller receiving results of measurement of the concentration of the exhaust gas from the exhaust gas measurer and results of measurement of the temperature of the processed gas and the ingredients of the processed gas from the exhaust gas measurer and controlling the gas supply based on the measurement results.

Adsorbent materials are disclosed, along with filter elements containing the adsorbent materials methods of using adsorbents to remove siloxane contaminants from a gas stream. The method includes providing an adsorbent material that has been washed with an acid and passing a gas through the adsorbent material so as to reduce siloxane levels in the gas. A filter element for reducing siloxane levels in a gas includes a first adsorbent material, the first adsorbent material comprising an acid-washed adsorbent; and a second adsorbent material, the second adsorbent material comprising an acid-impregnated adsorbent.

The present invention provides an activated carbon modification method, a filter mesh structure, use of the filter mesh structure, and a filter material regeneration method. The activated carbon modification method includes: providing an activated carbon; treating the surface of the activated carbon with hydrogen peroxide, so that the activated carbon forms a modified activated carbon; and removing the hydrogen peroxide from the surface of the modified activated carbon. The filter mesh structure includes the modified activated carbon, and the filter material therein can withstand hydrogen peroxide and temperatures above 100° C. and below 120° C. The filter material regeneration method includes: providing a filter material of the filter mesh structure as described above; treating the filter material with hydrogen peroxide; and removing substances from the surface of the modified activated carbon.

Method and apparatus for condensing a majority of the solvent in a process gas stream at low temperatures, e.g., below the freezing point of water, ca. −5° C. The gas stream exiting the condenser step may be further processed in one or more emission control devices, such as a single or multi-step series of concentrator devices, such as zeolite concentrator devices. One or more emission control operations can be carried out downstream of the single or multi-step concentrators. The aforementioned condensing process enables the one or more concentrators to operate in a favorable temperature range for removal of 99% or more of VOC, thereby meeting or exceeding strict environmental regulations.