Microstructure flow mixing devices are disclosed herein. An example device a first panel, a first plurality of raised features extending from a first surface of the first panel, a second plurality of raised features extending from the first surface of the first panel and a plurality of divider microstructures extending from the first surface of the first panel in line with and in between the first plurality of raised features and the second plurality of raised features. At least a portion of adjacent divider microstructures are spaced apart to form feed pathways or cross channels.

A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

A flow path structure according to an embodiment includes three groups of flow paths connected by branch and merging portions. The first group connects to the second group via a branch portion, and the second group connects to the third group via a merging portion. The branch portion has openings on both the first and second group sides, while the merging portion has openings on both the second and third group sides. If the first group has N flow paths and the second group has M flow paths (where M is N or more), the total opening area of the second group's branch openings is at most M/N times that of the first group's branch openings. Additionally, at least one merging opening in the second group is equal to or smaller than at least one merging opening in the third group.

A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.