A substrate processing apparatus is provided. The substrate processing apparatus includes a chamber, a brush within the chamber, a driver configured to rotate the brush, an injector configured to inject a coating material onto a surface of the brush when the brush is rotated, a thickness adjuster configured to adjust a thickness of the coating material on the brush when the brush is rotated, and a curing device configured to cure the coating material having an adjusted thickness on the brush.

A substrate processing apparatus is provided. The substrate processing apparatus includes a chamber, a brush within the chamber, a driver configured to rotate the brush, an injector configured to inject a coating material onto a surface of the brush when the brush is rotated, a thickness adjuster configured to adjust a thickness of the coating material on the brush when the brush is rotated, and a curing device configured to cure the coating material having an adjusted thickness on the brush.

A method of cleaning wafer-cleaning brushes includes passing a wafer having a first polished main side and an opposing unpolished backside between a pair of substantially cylindrical shaped wafer-cleaning brushes are rotated about an axial direction of the brushes while passing the wafer between the pair of wafer-cleaning brushes. A cleaning solution is applied to the brushes while passing the wafer between the pair of wafer-cleaning brushes. While passing between the pair of brushes, the first polished main side of the wafer faces a first direction, the first direction is an opposite direction to which a polished side of a production wafer faces during a subsequent polished wafer cleaning operation. The substantially cylindrical shaped wafer-cleaning brushes include a plurality of protrusions on an external surface of the brushes, and the brushes contact the wafer at least a portion of time the wafer is passing between the pair of brushes.

A method of cleaning wafer-cleaning brushes includes passing a wafer having a first polished main side and an opposing unpolished backside between a pair of substantially cylindrical shaped wafer-cleaning brushes are rotated about an axial direction of the brushes while passing the wafer between the pair of wafer-cleaning brushes. A cleaning solution is applied to the brushes while passing the wafer between the pair of wafer-cleaning brushes. While passing between the pair of brushes, the first polished main side of the wafer faces a first direction, the first direction is an opposite direction to which a polished side of a production wafer faces during a subsequent polished wafer cleaning operation. The substantially cylindrical shaped wafer-cleaning brushes include a plurality of protrusions on an external surface of the brushes, and the brushes contact the wafer at least a portion of time the wafer is passing between the pair of brushes.

Provided are a substrate treating method and a substrate treating apparatus. The substrate treating method includes: a treating operation of discharging a treatment liquid onto a substrate through a nozzle and treating the substrate with the treatment liquid; a moving operation of stopping the discharge of the treatment liquid and moving the nozzle to a homeport where the nozzle waits; a cleaning operation of cleaning the nozzle with a cleaning liquid in the homeport; and a discharging operation of discharging the treatment liquid from the nozzle into the homeport. Accordingly, it is possible to efficiently remove foreign substances remaining on a surface and the inside of the nozzle.

Provided are a substrate treating method and a substrate treating apparatus. The substrate treating method includes: a treating operation of discharging a treatment liquid onto a substrate through a nozzle and treating the substrate with the treatment liquid; a moving operation of stopping the discharge of the treatment liquid and moving the nozzle to a homeport where the nozzle waits; a cleaning operation of cleaning the nozzle with a cleaning liquid in the homeport; and a discharging operation of discharging the treatment liquid from the nozzle into the homeport. Accordingly, it is possible to efficiently remove foreign substances remaining on a surface and the inside of the nozzle.

A semiconductor wafer cleaning apparatus is provided. The semiconductor wafer cleaning apparatus includes a spin base, a spindle extending through the spin base, and a clamping member covering the spin base. The spindle includes a mounting part and a supporting part disposed on the mounting part. The mounting part includes an inner projection, the supporting part includes a conical projection, and the conical projection is surrounded by the inner projection. The semiconductor wafer cleaning apparatus further includes a first sealing ring disposed between the spin base and the mounting part.

A semiconductor wafer cleaning apparatus is provided. The semiconductor wafer cleaning apparatus includes a spin base, a spindle extending through the spin base, and a clamping member covering the spin base. The spindle includes a mounting part and a supporting part disposed on the mounting part. The mounting part includes an inner projection, the supporting part includes a conical projection, and the conical projection is surrounded by the inner projection. The semiconductor wafer cleaning apparatus further includes a first sealing ring disposed between the spin base and the mounting part.