Patent classifications
B08B3/10
Basin and high speed air solution
One embodiment provides a rinse basin and blower system configured to clean a pipette including: a rinse basin comprising: a hollow tube enclosed at one end; wherein the hollow tube comprises an upper port and a lower port; and the lower port being tapered toward the hollow tube; and wherein the rinse basin is connected to a blower system; the blower system comprising: a waste reservoir that receives, from the rinse basin, a waste product comprising: air and liquid, wherein the waste reservoir separates the liquid from the air; a dryer that receives the air from the waste reservoir and further separates any remaining liquid from the air; and a blower that receives the air from the dryer and exhausts the air.
Device for cleaning cylindrical rollers, machine comprising said device, and cleaning method
The cleaning device (20) for cleaning a cylindrical roller (50), for example an anilox roller of a printing machine, includes a cleaning head (30) with a cleaning chamber (110), in which there is housed a mechanical cleaning member (60), and with which there are associated feeding members (70) for feeding a cleaning liquid into the cleaning chamber (110). The mechanical member (60) and cleaning liquid dispensed by the feeding members work in combination inside said cleaning chamber (110) to clean the lateral surface of the roller (50).
Device for cleaning cylindrical rollers, machine comprising said device, and cleaning method
The cleaning device (20) for cleaning a cylindrical roller (50), for example an anilox roller of a printing machine, includes a cleaning head (30) with a cleaning chamber (110), in which there is housed a mechanical cleaning member (60), and with which there are associated feeding members (70) for feeding a cleaning liquid into the cleaning chamber (110). The mechanical member (60) and cleaning liquid dispensed by the feeding members work in combination inside said cleaning chamber (110) to clean the lateral surface of the roller (50).
Substrate processing method and substrate processing apparatus
The substrate processing method includes a hydrophilization step of hydrophilizing a surface of a substrate, a processing liquid supplying step of supplying a processing liquid to the hydrophilized surface of the substrate, a processing film forming step in which the processing liquid supplied to the surface of the substrate is solidified or cured to form a processing film on the surface of the substrate, and a peeling step in which a peeling liquid is supplied to the surface of the substrate to peel the processing film from the surface of the substrate. The peeling step includes a penetrating hole forming step in which the processing film is partially dissolved in the peeling liquid to form a penetrating hole in the processing film.
Substrate processing method and substrate processing apparatus
The substrate processing method includes a hydrophilization step of hydrophilizing a surface of a substrate, a processing liquid supplying step of supplying a processing liquid to the hydrophilized surface of the substrate, a processing film forming step in which the processing liquid supplied to the surface of the substrate is solidified or cured to form a processing film on the surface of the substrate, and a peeling step in which a peeling liquid is supplied to the surface of the substrate to peel the processing film from the surface of the substrate. The peeling step includes a penetrating hole forming step in which the processing film is partially dissolved in the peeling liquid to form a penetrating hole in the processing film.
Substrate processing method and substrate processing apparatus
A substrate processing method includes forming a high surface tension liquid film by supplying high surface tension liquid on a substrate surface, replacing the high surface tension liquid film with low surface tension liquid by supplying the low surface tension liquid to a center area of a substrate so that the low surface tension liquid impinges on the high surface tension liquid film formed on the center area of the substrate, and supplying high surface tension liquid for a predetermined period of time during the supplying the low surface tension liquid.
SYSTEMS AND METHODS TO CLEAN A CONTINUOUS SUBSTRATE
An example method to clean a continuous substrate involves applying a high pressure, low flow spray of a first cleaning fluid at the continuous substrate from one or more nozzles to remove particulate matter from the continuous substrate; an agitator, comprising at least one of a megasonic transducer or an ultrasonic transducer, and configured to direct energy at the continuous substrate; and drying the continuous substrate.
WAFER WET CLEANING SYSTEM
The present disclosure describes a wafer cleaning process in which a drained cleaning solution, which is used to remove metal contaminants from the wafer, is sampled and analyzed to determine the concentration of metal ions in the solution. The wafer cleaning process includes dispensing, in a wafer cleaning station, a chemical solution on one or more wafers; collecting the dispensed chemical solution; determining a concentration of contaminants in the chemical solution; in response to the concentration of the contaminants being greater than a baseline value, adjusting one or more parameters in the cleaning process; and in response to the concentration of the contaminants being equal to or less than the baseline value, transferring the one or more wafers out of the wafer cleaning station.
WAFER WET CLEANING SYSTEM
The present disclosure describes a wafer cleaning process in which a drained cleaning solution, which is used to remove metal contaminants from the wafer, is sampled and analyzed to determine the concentration of metal ions in the solution. The wafer cleaning process includes dispensing, in a wafer cleaning station, a chemical solution on one or more wafers; collecting the dispensed chemical solution; determining a concentration of contaminants in the chemical solution; in response to the concentration of the contaminants being greater than a baseline value, adjusting one or more parameters in the cleaning process; and in response to the concentration of the contaminants being equal to or less than the baseline value, transferring the one or more wafers out of the wafer cleaning station.
METHOD FOR REMOVING ADHESIVES AND/OR INTERLAMINAR INKS ON LAMINATED PLASTIC MATERIAL
The present invention relates to a method for removing interlaminar adhesives and/or inks on laminated plastic material, which comprises the following steps:
a) microperforating the laminated plastic material with at least one microperforation per cm.sup.2,
b) removing the ink and/or adhesive by adding a washing solution to the microperforated plastic resulting from step a),
c) separating the plastic material and the aqueous material.