A wet laser cleaning apparatus includes a machine base, a laser cleaning module, a shielding housing and a filtering device. A base material is placed in a reservoir of the machine base, into which a liquid is introduced through the filtering device. A control module drives first parallel axial track groups, a second parallel axial track group and a vertical axial track group to move an optical fiber laser knife device of the laser cleaning module to irradiate and clean the base material. A height sensor device and an orientation sensor device sense a position and a height of an object, so that the optical fiber laser knife device can automatically focus on the base material. Dusts produced after the optical fiber laser knife device has irradiated the base material are stored in the liquid, and the filtering device filters the dusts from the liquid.

A method of cleaning a substrate for a blank mask including: a first cleaning including irradiating a cleaning target substrate with a pre-treatment light to prepare a substrate cleaned with light, and a second cleaning including applying a first cleaning solution and a post-treatment light to the substrate cleaned with light to prepare the substrate for the blank mask, is disclosed.

The present invention addresses to a laser blasting pipe for heating a scale removal treatment to be descended by electric cable, and a recirculation system with the objective of heating the scale removal solution, inside the production string during the time the reaction is taking place, in order to guarantee its efficiency. The laser blast pipe is a device similar to a metallic cylinder that can travel through the interior of a production string, being descended by gravity itself, and ascended by the action of the cable, being able to recirculate and heat the fluid. This heating would have the function of compensating the heat loss of the removal solution due to the heat exchange of the riser with the seabed, and maintaining the temperature of the reaction inside the production line in an optimal range of yield, thus aiming at increasing the reaction efficiency and the reduction of the time required for the removal of scale in the production string of the well.

A wafer cleaning equipment includes a housing to be positioned adjacent to a wafer, a hollow region in the housing, a laser module that outputs a laser beam having a profile of the laser beam includes a first region having a first intensity and a second region having a second intensity greater than the first intensity, the laser beam being output into the hollow region, and a transparent window that covers an upper part of the hollow region and transmits the laser beam to be incident on an entirety of a lower surface of the wafer.

In a first aspect, the invention relates to a laser treatment head comprising an input for a laser bundle, and further provided with a lens system for focusing the laser bundle and a scanning system for deflecting the laser bundle according to a one-dimensional or two-dimensional touch pattern. In particular, the laser treatment head further comprises an directional body configurable relative to the casing between at least a first position and a second position, for variably emitting the deflected laser bundle with said touch pattern, in at least a first or a second emission direction. In further aspects, the invention relates to a laser treatment device and a laser treatment process.

A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

A method for cleaning semiconductor process equipment and a system thereof are provided. The method is adapted to apply to an object with at least one pollutant thereon and includes steps of providing multi-channel optical tweezers to irradiate the pollutant and locations where the pollutant is neighbor to, in order to let the optical tweezers generate a resultant force to the pollutant; and providing an airflow to the object. The resultant force is greater than a maximum static friction between the pollutant and the object so as to remove the pollutant.

A process for removing a material that is adhered to an underlying surface includes using a laser beam to heat the material to reduce the strength of adhesion between the material and the underlying surface. A stream of gas is directed at the heated material to displace the heated material from the underlying surface.

The cleaning process of cleaning an imprinting mold including a release layer coupled via siloxane bonds to a substrate of that release layer includes a first cleaning step and a second cleaning step. In the first cleaning step, the angle of contact of the surface of the release layer with water is made small, and in the second cleaning step, the alkali cleaning agent is brought in contact with the release layer that has gone through the first cleaning step.

Laser cleaning apparatus (100) comprising: a laser system (102) configured to output laser light having a power, a wavelength, a temporal characteristic and a divergence; a delivery cable (106) to deliver the laser light to a cleaning head; a cleaning head (110) comprising: an output aperture and output optics (116) configured to focus the laser light (104) to have a fluence at a focal plane (126) that is greater than an ablation threshold of a surface contaminant to be removed from a surface to be cleaned; scanning apparatus (118) to scan the laser light in at least one dimension across a scan region within the focal plane to cause the scanning laser light to have an effective divergence greater than the divergence of the laser light and to have a corresponding safe working distance from the output aperture determined by the effective divergence, the power, the wavelength and the temporal characteristic; and scan monitoring apparatus (120) to monitor the effective divergence of the scanning laser light and to generate an alarm signal (108) in response to determining that the effective divergence has changed.