A heat exchanger includes a heater including a ceramic body being tubular and a heat element embedded in the ceramic body, and a water receiver being tubular. The water receiver has a first end being through a first end of the ceramic body and located inside the ceramic body. The first end of the water receiver is at least partially nearer a second end of the ceramic body than an end of the heat element nearer the first end of the ceramic body.

A system to localize debris on an optical surface of a vehicle includes a first array along a first side of a perimeter of the optical surface and including a light source to emit light into a thickness of the optical surface. A second array is along a second side of the perimeter, opposite the first side, and includes a light detector to detect light scatter in the thickness and provide a corresponding output. A third array is along a third side of the perimeter and includes a light source to emit light. A fourth array is along a fourth side of the perimeter, opposite the third side, and includes a light detector to detect light scatter and provide a corresponding output. A controller identifies a presence of the debris, determines a position of the debris based on the output from the light detectors, and remediates the debris.

A method for cleaning a reflective photomask is provided. The method includes: disposing the reflective photomask in a chamber; providing hydrogen radicals to the chamber; and exposing the reflective photomask to the hydrogen radicals. A method of manufacturing a semiconductor structure and system for forming a semiconductor structure are also provided.

The present disclosure relates to an apparatus and method for cleaning an edge director, and more particularly, to an edge director cleaning apparatus that includes two or more nozzle pipes arranged to be parallel to each other, nozzle tips respectively provided at first ends of the two or more nozzle pipes, fuel manifolds respectively connected to second ends of the two or more nozzle pipes, and a fixing guide configured to fix the nozzle pipes, wherein the nozzle tips extend in an oblique direction with respect to an extending direction of the nozzle pipes. When the apparatus and method for cleaning an edge director according to the present disclosure are used, devit can be safely removed without damage to the apparatus while reducing downtime.

A cleaning apparatus for a vacuum exhaust system capable of preventing redeposition of deposits on a downstream side of a vacuum pump is provided. A cold trap capable of causing deposits to be formed by cooling gas containing a sublimation component, at least one first vacuum pump disposed upstream of the cold trap, at least one first piping connecting the first vacuum pump to the cold trap, at least one second vacuum pump disposed downstream of the cold trap, and at least one second piping connecting the second vacuum pump to the cold trap are provided. At least a part of the first vacuum pump or the first piping is configured to be heated to higher than or equal to a sublimation temperature of the sublimation component. The cold trap is configured to be cooled to less than or equal to the sublimation temperature of the sublimation component.

The present application discloses a method for purge clean of a low pressure furnace, comprising: step 1, providing a process chamber of the low pressure furnace in a standby state, wherein an inner wall thin film formed by a furnace deposition process is accumulated on the surface of an inner wall of the process chamber; step 2, performing temperature ramp-up or temperature ramp-down treatment on the process chamber to generate first thermal stress in the inner wall thin film, wherein thin film particles with poor adhesion in the inner wall thin film peels off; step 3, introducing a cleaning gas in a pulse manner to perform cycle purge clean on the process chamber, so as to remove the peeling thin film particles from the process chamber; and step 4, switching a state of the process chamber to the standby state after the cycle purge clean ends.

Methods and apparatus to reduce biological carryover using induction heating are disclosed herein. An example method includes washing an aspiration and dispense device. The example method includes generating an alternating electromagnetic field and introducing the aspiration and dispense device into the alternating electromagnetic field. The example method includes inductively heating the aspiration and dispense device with the alternating electromagnetic field. In the example method, the washing is to occur in concert with the heating.

A system for removing a coating from an underlying layer can include a wave-based weakening system configured to weaken the coating by decreasing a coupling force between the coating and the substrate, a coating removal mechanism configured to remove the weakened coating from the underlying layer, and a sensor configured to determine a property associated with the coating. A method for removing a coating from an underlying layer can include generating a weakened coating and removing the weakened coating.

An electronic vaping device includes a power supply section, a heater assembly section, and a cartridge. The power supply section includes a power supply. The cartridge section includes a reservoir configured to store a pre-vapor formulation, and a wick in fluid communication with the pre-vapor formulation. The heater assembly section is connected to the power supply section and the cartridge. The heater assembly section includes at least one plate heater in physical contact with a portion of the wick. The at least one plate heater is selectively electrically connectable to the power supply.

Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.