A soft magnetic nanoparticle comprising an iron aluminide nanoalloy of the DO.sub.3 phase as a core encapsulated in an inert shell made of alumina.

A soft magnetic nanoparticle comprising an iron aluminide nanoalloy of the DO.sub.3 phase as a core encapsulated in an inert shell made of alumina.

Provided are thin leaf-like indium particles having a first peak and a second peak at a greater particle diameter than a particle diameter at which the first peak appears in a volume-based particle size distribution representing a relationship between particle diameters of indium particles and ratios by volume of the indium particles at the particle diameters, wherein a volume V1 of the indium particles at the first peak and a volume V2 of the indium particles at the second peak satisfy a formula (V1/V2)×100≥25%.

Provided are thin leaf-like indium particles having a first peak and a second peak at a greater particle diameter than a particle diameter at which the first peak appears in a volume-based particle size distribution representing a relationship between particle diameters of indium particles and ratios by volume of the indium particles at the particle diameters, wherein a volume V1 of the indium particles at the first peak and a volume V2 of the indium particles at the second peak satisfy a formula (V1/V2)×100≥25%.

A plasma atomization metal powder manufacturing process includes providing a heated metal source and contacting the heated metal source with the plasma of at least one plasma source under conditions effective for causing atomization of the heated metal source. The atomization may be carried out using a gas to metal ratio of less than about 20, thereby obtaining a raw metal powder having a 0-106 μm particle size distribution yield of at least 80%. The process may further include aligning the heated metal source with the plasma of at least one plasma source. An atomizing system may include an alignment system positioned upstream of the plasma source and adapted to adjust an orientation of the metal source relative to the at least one plasma source.

A plasma atomization metal powder manufacturing process includes providing a heated metal source and contacting the heated metal source with the plasma of at least one plasma source under conditions effective for causing atomization of the heated metal source. The atomization may be carried out using a gas to metal ratio of less than about 20, thereby obtaining a raw metal powder having a 0-106 μm particle size distribution yield of at least 80%. The process may further include aligning the heated metal source with the plasma of at least one plasma source. An atomizing system may include an alignment system positioned upstream of the plasma source and adapted to adjust an orientation of the metal source relative to the at least one plasma source.

A plasma atomization metal powder manufacturing process includes providing a heated metal source and contacting the heated metal source with the plasma of at least one plasma source under conditions effective for causing atomization of the heated metal source. The atomization may be carried out using a gas to metal ratio of less than about 20, thereby obtaining a raw metal powder having a 0-106 μm particle size distribution yield of at least 80%. The process may further include aligning the heated metal source with the plasma of at least one plasma source. An atomizing system may include an alignment system positioned upstream of the plasma source and adapted to adjust an orientation of the metal source relative to the at least one plasma source.

A process for producing magnetic nanowires of high quality and a good production yield is disclosed. The process comprises sputtering a target of a magnetic material using a plasma, growing nanoparticles from the sputtered matter to magnetic nanoparticles and collecting the magnetic nanoparticles on a substrate in the form of nanowires.

A process for producing magnetic nanowires of high quality and a good production yield is disclosed. The process comprises sputtering a target of a magnetic material using a plasma, growing nanoparticles from the sputtered matter to magnetic nanoparticles and collecting the magnetic nanoparticles on a substrate in the form of nanowires.

This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.