Patent classifications
B22F2207/03
Method and apparatus for in situ synthesis of SiC, SiC ceramic matrix composites, and SiC metal matrix composites during additive manufacturing
Methods and apparatuses for in situ synthesis of SiC, CMCs, and MMCs are disclosed, comprising: providing an apparatus having: an electromagnetic energy source; an autofocusing scanner; a powder system for SiC and one or more powders; a powder delivery system; a shielding gas comprising argon and/or nitrogen; and a computer coupled to and configured to control the energy source, scanner, powder system, and powder delivery system to deposit layers of the sample; programming the computer with specifications of the sample; using the computer to control electromagnetic radiation, mixing ratio, and powder deposition parameters based on the specifications of the sample; and using the autofocusing scanner to focus and scan the electromagnetic radiation onto the sample while the powders are concurrently deposited by the powder delivery system onto the sample to create a melting pool to deposit one or more layers onto the sample. Other embodiments are described and claimed.
Method and apparatus for in situ synthesis of SiC, SiC ceramic matrix composites, and SiC metal matrix composites during additive manufacturing
Methods and apparatuses for in situ synthesis of SiC, CMCs, and MMCs are disclosed, comprising: providing an apparatus having: an electromagnetic energy source; an autofocusing scanner; a powder system for SiC and one or more powders; a powder delivery system; a shielding gas comprising argon and/or nitrogen; and a computer coupled to and configured to control the energy source, scanner, powder system, and powder delivery system to deposit layers of the sample; programming the computer with specifications of the sample; using the computer to control electromagnetic radiation, mixing ratio, and powder deposition parameters based on the specifications of the sample; and using the autofocusing scanner to focus and scan the electromagnetic radiation onto the sample while the powders are concurrently deposited by the powder delivery system onto the sample to create a melting pool to deposit one or more layers onto the sample. Other embodiments are described and claimed.
Superhard constructions and methods of making same
A super hard polycrystalline construction is disclosed as comprising a body of super hard material having a first fraction of super hard grains in a matrix of a second fraction of super hard grains. The average grain size of the first fraction is between around 1.5 to around 10 times the average grain size of the second fraction and the first fraction comprises around 5 vol % to around 30 vol % of the grains of super hard material in the body.
Three dimensional printing of cermet or cemented carbide
The present invention relates to a powder mixture for three-dimensional (3D) printing of a cermet or a cemented carbide body. The powder mixture includes 65-85 wt % of porous cemented carbide or cermet particles of a median particle size (D50) of 10-35 μm, and 15-35 wt % of a dense cemented carbide or cermet particles of a median particle size (D50) of 3-10 μm. The present invention also relates to a method of making a cermet or cemented carbide body, the method including the steps of forming the powder mixture, 3D printing a body using the powder mixture and a printing binder and thereby forming a 3D printed cermet or cemented carbide green body and sintering the green body and to form a cermet or cemented carbide body.
Three dimensional printing of cermet or cemented carbide
The present invention relates to a powder for three-dimensional printing of a cermet or a cemented carbide body. The powder has 30-70 vol % of the particles that are <10 μm in diameter. The present invention also relates to a method of making a cermet or cemented carbide body. The method includes the steps of forming the powder, 3D printing a body using the powder together with a printing binder to form a 3D printed cermet or cemented carbide green body and subsequently sintering the green body to form a cermet or cemented carbide body.
CEMENTED CARBIDE WITH ALTERNATIVE BINDER
The present disclosure relates to a cutting tool including a cemented carbide substrate having WC, gamma phase and a binder phase. The substrate is provided with a binder phase enriched surface zone, which is depleted of gamma phase, wherein no graphite and no ETA phase is present in the microstructure and wherein the binder phase is a high entropy alloy.
Cutting tool
A cutting tool has a substrate of cemented carbide including WC and a binder phase. The cutting tool has a gradient surface zone with a thickness of between 50-400 μm having a binder phase gradient with the lowest binder phase content in the outermost part of the gradient surface zone and wherein the cutting tool also includes free graphite. The present disclosure also relates to a method of making a cutting tool according to the above. The cemented carbide body shows improved resistance towards chemical wear when used for machining non-ferrous alloys such as Ti-alloys and Ni-based alloys.
Cutting tool
A cutting tool has a substrate of cemented carbide including WC and a binder phase. The cutting tool has a gradient surface zone with a thickness of between 50-400 μm having a binder phase gradient with the lowest binder phase content in the outermost part of the gradient surface zone and wherein the cutting tool also includes free graphite. The present disclosure also relates to a method of making a cutting tool according to the above. The cemented carbide body shows improved resistance towards chemical wear when used for machining non-ferrous alloys such as Ti-alloys and Ni-based alloys.
Composite body
A composite body has a cermet member, a metal member and an intermediate member. The cermet member includes a cermet oxide phase and a cermet metal phase. The cermet oxide phase contains a Ni-containing oxide or an Fe-containing oxide. The cermet metal phase contains Ni. The intermediate layer contains Cu. The mass proportions of Cu in the cermet metal phase at points which are spaced apart by 10, 50, 100 and 1000 μm from the interface between the cermet member and the intermediate layer to the cermet member side are denoted by C10, C50, C100 and C1000 (mass %). When the mass proportions of Cu in the cermet oxide phase at points which are spaced apart by 10 and 100 μm from the interface to the cermet member side are denoted by M10 and M100 (mass %), C10>C50>C100>C1000, and 5>M10−M100>−5.
Polycrystalline diamond compact including a non-uniformly leached polycrystalline diamond table and applications therefor
In an embodiment, a polycrystalline diamond compacts (PDC) includes a substrate and a polycrystalline diamond (PCD) table bonded to the substrate. The PCD table defines an upper surface and at least one peripheral surface. The PCD table includes a plurality of bonded diamond grains. The PCD table includes a first region adjacent to the substrate that includes a metallic constituent disposed interstitially between the bonded diamond grains thereof, and a leached second region extending inwardly from the upper surface and the at least one peripheral surface that is depleted of the metallic constituent. The leached second region exhibits a leach depth profile having a maximum leach depth that is measured from the upper surface. A leach depth of the leach depth profile decreases with lateral distance from a central axis of the PCD table and toward the at least one peripheral surface.