Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. Based on the measured amount of displacement of the sidewall, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. Based on the measured amount of displacement of the sidewall, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

A metal wire containing tungsten is provided. A tungsten content of the metal wire is at least 90 wt %. A tensile strength of the metal wire is at least 4000 MPa. An elastic modulus of the metal wire is at least 350 GPa and at most 450 GPa. A diameter of the metal wire is at most 60 m. An average crystal grain size of the metal wire in a cross-section orthogonal to an axis of the metal wire is at most 0.20 m.

Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. The measured amount of displacement of the sidewall is stored as displacement data. Based on the stored data, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

A wire saw abnormality diagnosis device and a wire saw abnormality diagnosis method are provided. The abnormality diagnosis device includes: a diagnosis mode executer that executes a first diagnosis mode, a second diagnosis mode, and a third diagnosis mode before the cutting; a data group acquirer that acquires a first data group, a second data group, and a third data group for pluralities of data items indicating operating states of the wire saw; a deviation information calculator that calculates deviation information relating to deviations derived by comparing a first reference data group, a second reference data group, and a third reference data group with the first data group, the second data group, and the third data group for the pluralities of data items; and a determiner that determines presence or absence of an abnormality in the wire saw based on the calculated deviation information.

Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. The measured amount of displacement of the sidewall is stored as displacement data. Based on the stored data, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

An amount of warp of a wafer is not only reduced, but the amount of warp of the wafer is also accurately controlled to a desired amount. The present invention relates to a method for slicing a semiconductor single crystal ingot, by which a cylindrical semiconductor single crystal ingot is bonded to and held by a holder in a state where the ingot is rotated at a predetermined rotation angle around a crystal axis of the ingot different from a center axis of a cylinder of this ingot and the ingot is sliced by a cutting apparatus in this state. The predetermined rotation angle at the time of bonding and holding the ingot with the use of the holder in such a manner that an amount of warp of a wafer sliced out by the cutting apparatus becomes a predetermined amount.

A system for slicing wafers from a monocrystalline semiconductor ingot includes a wire saw, a bond beam, the monocrystalline semiconductor ingot, and two sacrificial disks. The wire saw includes a wire web and wire guides operable to drive the wire web during a slicing operation. The bond beam is connected to the wire saw. The wire saw is operable to move the bond beam in a movement direction towards the wire web during the slicing operation to slice the wafers from the ingot. The ingot includes longitudinal end faces and a circumferential edge extending between the longitudinal end faces. The ingot is attached to the bond beam along the circumferential edge. One sacrificial disk is positioned adjacent each of the longitudinal end faces of the ingot to inhibit uncontrolled breakage of the wafers during the slicing operation.

Slices are cut from workpieces using a wire saw having a wire array tensioned in a plane between two wire guide rollers each supported between fixed and floating bearings and comprising a chamber and a shell enclosing a core and having guide grooves for wires. During a cut-off operation, a workpiece is fed through the wire array perpendicular to a workpiece axis and the wire array plane. The workpiece is fed through the wire array while simultaneously: changing shell lengths by adjusting chamber temperatures in dependence on a depth of cut and a first correction profile; and moving the workpiece along the workpiece axis in accordance with a second correction profile. The correction profiles are opposed to a shape deviation.

A method for slicing wafers from a workpiece using a sawing wire, wherein at least two wire guide rolls clamp a wire web, each wire guide roll having a multiplicity of grooves in its lateral surface, wherein at least one groove in which no wire is inserted during the wire sawing is present alongside a wire-guiding groove and, after wear on the wire-guiding grooves or after a defined number of sawing processes, the sawing wire is wound over into the previously unoccupied grooves that are not yet worn or used, respectively.