A machine for machining a workpiece having a first central longitudinal axis passing through a workpiece plane that is disposed orthogonally relative to the first central longitudinal axis is provided. The machine includes a chuck or fixture on which the workpiece is disposable, a grinding spindle having a body, a wheel supporting an abrasive and an insulator electrically isolating the wheel from the body, the wheel being operable to remove material from the workpiece, the grinding spindle having a second central longitudinal axis about which the grinding spindle rotates, the second central longitudinal axis of the grinding spindle passing through the workpiece in the workpiece plane so as to create a continuous gear tooth on the workpiece and an electrochemical grinding (ECG) element configured to execute ECG processing on the grinding spindle and the workpiece to soften the workpiece as the gear tooth is being created by the grinding spindle.

A surface processing method of a semiconductor wafer includes the following processes, procedures or steps: a pulsed current of which the current density is larger than or equal to 20 mA/cm.sup.2 is caused to flow through the semiconductor wafer as an anode in an electrolyte solution, thereby anodizing an object surface of the semiconductor wafer; and in a state where a surface processing pad having a grinding stone layer is disposed such that the grinding stone layer faces the object surface, an oxide generated by the anodization is selectively removed by the grinding stone layer.

A wafer processing system (1) is provided. The system (1) includes a processing tool (10) comprising at least one grinding member (16) used to remove material from a wafer substrate (80). The system (1) also includes an electrolyte supply line (361) used to supply an electrolyte to the wafer substrate (80). The system (1) further includes a holding module (20) for holding the wafer substrate (80). The holding module (20) includes a conductive base (21) and a conductive porous member (22) positioned on the top surface of the conductive base (21). A vacuum source (53) fluidly communicated with fluid channel (214) formed in the conductive base (21) to create a vacuum to hold the wafer substrate (80) on the conductive porous member (22). In addition, the system (1) includes an actuator assembly for driving a rotation of the grinding member (16) and a rotation of the conductive base (21), and a power supply module (45) to apply an electric current to the grinding member (16) and to the conductive porous member (22) through the conductive base (21).

A wafer processing system (1) is provided. The system (1) includes a processing tool (10) comprising at least one grinding member (16) used to remove material from a wafer substrate (80). The system (1) also includes an electrolyte supply line (361) used to supply an electrolyte to the wafer substrate (80). The system (1) further includes a holding module (20) for holding the wafer substrate (80). The holding module (20) includes a conductive base (21) and a conductive porous member (22) positioned on the top surface of the conductive base (21). A vacuum source (53) fluidly communicated with fluid channel (214) formed in the conductive base (21) to create a vacuum to hold the wafer substrate (80) on the conductive porous member (22). In addition, the system (1) includes an actuator assembly for driving a rotation of the grinding member (16) and a rotation of the conductive base (21), and a power supply module (45) to apply an electric current to the grinding member (16) and to the conductive porous member (22) through the conductive base (21).

To provide a high-frequency-vibration-assisted electrolytic grinding method and a device therefor in which micro abrasive grains can be used so as to improve the grinding accuracy and efficiency. A high-frequency-vibration-assisted electrolytic grinding method in which a work is grinded by a grinding stone while electrolytic reaction is performed by applying a voltage between the grinding stone and the work through an electrolytic solution and high-frequency vibration is transmitted to the grinding stone or the work wherein; the grinding stone has non-conductive micro abrasive grains with grain sizes of less than #400 in accordance with the JIS R6001 standard of grinding stones for precision polishing projecting from its surface formed of conductive binding material, and the distance between the grinding stone and the work, which is regulated by the projecting lengths of the micro abrasive grains from the base of the grinding stone, is set to less than 0.02 mm.

To provide a high-frequency-vibration-assisted electrolytic grinding method and a device therefor in which micro abrasive grains can be used so as to improve the grinding accuracy and efficiency. A high-frequency-vibration-assisted electrolytic grinding method in which a work is grinded by a grinding stone while electrolytic reaction is performed by applying a voltage between the grinding stone and the work through an electrolytic solution and high-frequency vibration is transmitted to the grinding stone or the work wherein; the grinding stone has non-conductive micro abrasive grains with grain sizes of less than #400 in accordance with the JIS R6001 standard of grinding stones for precision polishing projecting from its surface formed of conductive binding material, and the distance between the grinding stone and the work, which is regulated by the projecting lengths of the micro abrasive grains from the base of the grinding stone, is set to less than 0.02 mm.

A machine for machining a workpiece having a first central longitudinal axis passing through a workpiece plane that is disposed orthogonally relative to the first central longitudinal axis is provided. The machine includes a chuck or fixture on which the workpiece is disposable, a grinding spindle having a body, a wheel supporting an abrasive and an insulator electrically isolating the wheel from the body, the wheel being operable to remove material from the workpiece, the grinding spindle having a second central longitudinal axis about which the grinding spindle rotates, the second central longitudinal axis of the grinding spindle passing through the workpiece in the workpiece plane so as to create a continuous gear tooth on the workpiece and an electrochemical grinding (ECG) element configured to execute ECG processing on the grinding spindle and the workpiece to soften the workpiece as the gear tooth is being created by the grinding spindle.

A machine for machining a workpiece having a first central longitudinal axis passing through a workpiece plane that is disposed orthogonally relative to the first central longitudinal axis is provided. The machine includes a chuck or fixture on which the workpiece is disposable, a grinding spindle having a body, a wheel supporting an abrasive and an insulator electrically isolating the wheel from the body, the wheel being operable to remove material from the workpiece, the grinding spindle having a second central longitudinal axis about which the grinding spindle rotates, the second central longitudinal axis of the grinding spindle passing through the workpiece in the workpiece plane so as to create a continuous gear tooth on the workpiece and an electrochemical grinding (ECG) element configured to execute ECG processing on the grinding spindle and the workpiece to soften the workpiece as the gear tooth is being created by the grinding spindle.

The polishing system includes a power supply. The polishing system also includes a container including an interior portion. The interior portion includes a conductive material thereon. The conductive material is electrically coupled to the power supply. The polishing system also includes an electrolytic solution disposed within the container. The electrolytic solution includes a plurality of abrasive particles. The polishing system further includes a flexible media disposed within the container. The container is configured to contain an object. The power supply configured to electrically couple to the object. Each of the electrolytic solution, the flexible media, and the abrasive particles is configured to partially polish the object substantially simultaneously.

The polishing system includes a power supply. The polishing system also includes a container including an interior portion. The interior portion includes a conductive material thereon. The conductive material is electrically coupled to the power supply. The polishing system also includes an electrolytic solution disposed within the container. The electrolytic solution includes a plurality of abrasive particles. The polishing system further includes a flexible media disposed within the container. The container is configured to contain an object. The power supply configured to electrically couple to the object. Each of the electrolytic solution, the flexible media, and the abrasive particles is configured to partially polish the object substantially simultaneously.