A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided. This laser processing method comprises a preparatory step of holding a lens at an initial position set such that a converging point is located at a predetermined position within the object; a first processing step (S11 and S12) of emitting a first laser beam for processing while holding the lens at the initial position, and moving the lens and the ltd object relative to each other along a main surface so as to form a modified region in one end part of a line to cut; and a second processing step (S13 and S14) of releasing the lens from being held at the initial position after forming the modified region in the one end part of the line to cut, and then moving the lens and the object relative to each other along the main surface while adjusting the gap between the lens and the main surface after the release, so as to form the modified region.

The present disclosure provides three-dimensional (3D) printing methods, apparatuses, and systems using, inter alia, a controller that regulates formation of at least one 3D object (e.g., in real time during the 3D printing); and a non-transitory computer-readable medium facilitating the same. For example, a controller that regulates a deformation of at least a portion of the 3D object. The control may be in situ control. The control may be real-time control during the 3D printing process. For example, the control may be during a physical-attribute pulse. The present disclosure provides various methods, apparatuses, systems and software for estimating the fundamental length scale of a melt pool, and for various tools that increase the accuracy of the 3D printing.

The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

A laser apparatus includes a plurality of laser modules each generating a laser line in a working plane. The laser modules are juxtaposed so that the laser lines generated by the modules combine into a single laser line. Each of the laser modules includes at least one laser line generator. The laser line generator includes two linear arrays of strips of laser diodes each emitting a focused laser beam. The two linear arrays are arranged parallel to each other so that the strips are staggered. The two sets of parallel laser beams generated by the two linear arrays of strips, respectively, are merged into a single laser line by a set of mirrors. The linear arrays of strips of laser diodes and the mirrors are arranged so that the two sets of laser beams trace optical paths of the same length before being merged into a single laser line.

Laser material processing systems having beam positioning assemblies with fluidic bearing interfaces and associated systems and methods are disclosed herein. In one embodiment, a laser material processing system includes a beam positioning assembly configured to position a laser beam. The beam positioning assembly includes a first linear guide having first guide surfaces and a second linear guide having second guide surfaces. The first linear guide is moveably coupled to the first linear guide via the first guide surfaces. The second linear guide is moveably coupled to a carriage via the second guide surfaces. At least one fluidic bearing interface is positioned to prevent direct physical contact between the second linear guide and at least one of the first guide surfaces and/or between the carriage and at least one of the second guide surfaces.

A wafer grooving apparatus (100) for forming an elongate recess (103) in a semiconductor wafer surface, the apparatus comprising:

a wafer table (110) for receiving and holding a semiconductor wafer;
a radiation device (120) for generating a radiation beam (121);
a beam directing device (130) for directing the radiation beam to a top surface (102) of the wafer so as to create a beam spot (142) where the radiation beam ablates wafer material on the wafer surface to form a recess;
a wafer table displacement drive (170) for effecting a mutual displacement between the radiation beam and the wafer surface in a radiation beam displacement direction;
a recess profile measuring device (180) arranged at a predetermined distance behind the beam directing device in the radiation beam displacement direction effected by the wafer table displacement drive for measuring a depth profile of the recess that has been formed by the radiation beam.

A wafer grooving apparatus (100) for forming an elongate recess (103) in a semiconductor wafer surface, the apparatus comprising:

a wafer table (110) for receiving and holding a semiconductor wafer;
a radiation device (120) for generating a radiation beam (121);
a beam directing device (130) for directing the radiation beam to a top surface (102) of the wafer so as to create a beam spot (142) where the radiation beam ablates wafer material on the wafer surface to form a recess;
a wafer table displacement drive (170) for effecting a mutual displacement between the radiation beam and the wafer surface in a radiation beam displacement direction;
a recess profile measuring device (180) arranged at a predetermined distance behind the beam directing device in the radiation beam displacement direction effected by the wafer table displacement drive for measuring a depth profile of the recess that has been formed by the radiation beam.

A laser cutting head powered by a laser emission apparatus including optical transmission devices and associated with a cutting machine tool, includes a collimation device to collimate a laser beam coming from the laser emission apparatus, a focusing device to focus a collimated laser beam leaving the collimation devices, and a casing to house the focusing unit. The focusing unit includes one focusing lens and support devices to house and hold the focusing lens and move it along an adjustment direction within the casing in order to vary a focal point of the laser beam leaving the focusing lens. The laser cutting head includes a cooling unit secured to the casing and heat conducting devices used to connect the support devices with the cooling unit in order to extract the heat generated by the laser beam crossing the focusing lens by thermal conduction from the support devices and the focusing lens.

A method of dividing a single-crystal substrate along a plurality of preset division lines, includes a shield tunnel forming step of applying a pulsed laser beam having such a wavelength that permeates through the substrate along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, a protective member adhering step of adhering a protective member to the substrate before or after the shield tunnel forming step, and a grinding step of holding the protective member on the substrate, to which the shield tunnel forming step and the protective member adhering step are performed, on a chuck table of a grinding apparatus, grinding a reverse surface of the substrate to bring the substrate to a predetermined thickness, and dividing the substrate along the division lines along which the shield tunnels have been formed.