A silicon wafer forming method includes: a block ingot forming step of cutting a silicon ingot to form block ingots; a planarizing step of grinding an end face of the block ingot to planarize the end face; a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned in the inside of the block ingot at a depth from the end face of the block ingot corresponding to the thickness of the wafer to be formed, to form a separation layer; and a wafer forming step of separating the silicon wafer to be formed from the separation layer.

Energy is locally supplied to a cutting surface that is formed in an outer circumferential region of a wafer in a trimming step, before a grinding step of grinding the wafer. This can remove or repair at least part of a damage layer formed in the outer circumferential region of the wafer due to the trimming step. As a result, breakage of the wafer that originates from the outer circumferential region in the grinding of the wafer which has been subjected to the edge trimming and generation of dust in a step after this grinding can be suppressed.

A feed axis motor includes a front-side housing fixed to an end face of a stator core. The stator core is formed of a material with iron as a main component. The front-side housing is formed of a material with aluminum as a main component. The stator core and the front-side housing are coupled with each other at a welding mark generated by laser welding. The welding mark extends in a circumferential direction so as to cover a line of contact between the stator core and the front-side housing. The welding mark seals the boundary portion between the stator core and the front-side housing.

A method of machining includes mounting a component in a drilling machine. The component has a target region where the hole is to be drilled. The component and a jet head are situated relative to each other in a drilling arrangement in which the target region is at a first position that is vertically equal to or vertically above a second position at which the jet head is located. A liquid stream is jetted from the jet head and contains either abrasive particles or a laser beam. The stream impinges the target region, and the abrasive particles or the laser beam cause removal of material from the component to form the hole. The liquid stream rebounds off of the component as back-splash. The drilling arrangement causes gravitational draining of the back-splash from the target region to reduce interference between the back-splash and the liquid stream.

The present invention provides a heat transfer equipment at rapid rate of thermal diffusion across the temperature gradient. The present invention further provides a method of manufacturing of a heat transfer equipment. The various embodiments of the present invention provide various methods for manufacturing of heat transfer equipment by affixing the loop or a solid member (201) containing crests and troughs on the surface of the central hollow member (101) by use of laser weld (301). The invention would provide much higher strength to the equipment and have much higher temperature sensitivity.

Systems and methods for machining openings of a component are provided. In one exemplary aspect, a laser system includes features for machining an opening into a component, such as a cooling hole for a CMC component of a gas turbine engine. The component can be oriented in a first position and lasered while oriented in the first position to form a portion of the opening. The component is then oriented to a second position and lasered while oriented in the second position to form another portion of the opening. The component is alternated between the first and second positions until the predetermined geometry of the opening is formed. The component is oriented in the first and second positions such that the laser beam can machine the component without clipping areas that are not desired to be machined.

Described here are embodiments of processes and systems for the continuous manufacturing of implantable continuous analyte sensors. In some embodiments, a method is provided for sequentially advancing an elongated conductive body through a plurality of stations, each configured to treat the elongated conductive body. In some of these embodiments, one or more of the stations is configured to coat the elongated conductive body using a meniscus coating process, whereby a solution formed of a polymer and a solvent is prepared, the solution is continuously circulated to provide a meniscus on a top portion of a vessel holding the solution, and the elongated conductive body is advanced through the meniscus. The method may also comprise the step of removing excess coating material from the elongated conductive body by advancing the elongated conductive body through a die orifice. For example, a provided elongated conductive body 510 is advanced through a pre-coating treatment station 520, through a coating station 530, through a thickness control station 540, through a drying or curing station 550, through a thickness measurement station 560, and through a post-coating treatment station 570.

An assembly for rapid manufacturing of symmetrical objects by direct metal deposition is disclosed. A rotary stage provides rotational movement to an object supported by the stage around a central stage axis. Nozzles are spaced above the rotary stage for performing direct metal deposition for building an object supported by the stage. Each nozzle is independently moveable along a horizontal axis and independently pivotable, and combined, moveable along a vertical axis for providing symmetrical movement corresponding to a symmetrical deposition configuration of the object while the object is rotated around the central stage axis.

A device includes a first laser emitter, a second laser emitter, and a separating portion. The first laser emitter is configured to emit, in an outer circumferential portion of a bonded substrate including a first substrate and a second substrate bonded to each other, a first laser beam into the first substrate from a side of the first substrate to form a modified layer. The second laser emitter is configured to emit a second laser beam to a material layer that is arranged between the first substrate and the second substrate and is provided on the second substrate from a side of the second substrate, to cause peeling between the second substrate and the material layer. The separating portion is configured to separate an outer circumferential portion of the first substrate and an outer circumferential portion of the material layer from the outer circumferential portion of the bonded substrate.

An adjustment method of a laser processing apparatus includes a spatial light modulator adjustment step of adjusting a spatial light modulator into a state ready for splitting a laser beam emitted from a laser oscillator and applying a plurality of laser beams such that laser beams will have a desired positional relation, a processing mark formation step of operating the laser oscillator to apply the laser beams to a wafer such that a plurality of processing marks is formed, an imaging step of stopping the laser oscillator, and imaging the processing marks formed at the wafer, and an aberration correction step of correcting aberration of the condenser by comparing the desired positional relation and a positional relation among the imaged processing marks, and adjusting the spatial light modulator such that the positional relation among the processing marks conforms to the desired positional relation.